13007

13007-HAF NPN Silicon Epitaxial Planar Power Transistor for high voltage, high-speed power switching application Features • Halogen and Antimony Free(HAF), RoHS compliant 1.Base 2.Collector 3.Emitter TO-220FB Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V IC 8 A Total Power Dissipation (Ta = 25 OC) Ptot 2 W Total Power Dissipation (TC = 25 OC) Ptot 80 W Tj 150 O C Tstg - 55 to + 150 O C Symbol Max. Unit Thermal Resistance from Junction to Case (TC = 25 OC) RθJC 1.6 ℃/W Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Collector Current Junction Temperature Storage Temperature Range Thermal Characteristics Parameter 1/3 ® Dated: 11/11/2020 Rev: 02 13007-HAF Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 5 V, IC = 2 A hFE 8 40 - Collector Base Cutoff Current at VCB = 700 V ICBO - 1 mA Emitter Base Cutoff Current at VEB = 9 V IEBO - 1 mA Collector Base Breakdown Voltage at IC = 1 mA V(BR)CBO 700 - V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 400 - V Emitter Base Breakdown Voltage at IE = 1 mA V(BR)EBO 9 - V Collector Emitter Saturation Voltage at IC = 5 A, IB = 1 A VCE(sat) - 2 V Base Emitter Saturation Voltage at IC = 5 A, IB = 1 A VBE(sat) - 1.6 V fT 4 - MHz Transition Frequency at VCE = 10 V, IC = 0.5 A 2/3 ® Dated: 11/11/2020 Rev: 02 13007-HAF Package Outline Dimensions (Units: mm) TO-220FB Marking information " 13007 " = Part No. " ****** " = Date Code Marking 13007 Font type: Arial ****** 3/3 ® Dated: 11/11/2020 Rev: 02