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13003

13003

  • 厂商:

    ST(先科)

  • 封装:

    TO-92-3

  • 描述:

    通用三极管 TO92 NPN Ic=1.5A

  • 数据手册
  • 价格&库存
13003 数据手册
13003-HAF NPN Silicon Epitaxial Planar Transistor Features • Halogen and Antimony Free(HAF), RoHS compliant Applications • For high voltage and high speed switching 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 430 V Emitter Base Voltage VEBO 9 V IC 1.5 A ICP Ptot 3 0.8 A W Tj 150 O C Tstg - 65 to + 150 O C Symbol Max. Unit RθJA 156 /W Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Ratings Parameter Thermal Resistance Junction to Ambient ® 1/4 Dated:10/10/2022 CL Rev:04 13003-HAF Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 0.5 A at VCE = 2 V, IC = 1 A at VCE = 5 V, IC = 10 µA Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Base Breakdown Voltage at IC = 500 µA Collector Emitter Breakdown Voltage at IC = 5 mA Emitter Base Breakdown Voltage at IE = 500 µA Collector Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A at IC = 1.5 A, IB = 0.5 A Base Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A Transition Frequency at VCE = 10 V, IC = 100 mA Turn On Time at VCC = 125 V, IC = 1 A, IB = -IB2 = 0.2 A, RL = 125 Ω Storage Time at VCC = 125 V, IC = 1 A, IB = -IB2 = 0.2 A, RL = 125 Ω Fall Time at VCC = 125 V, IC = 1 A, IB = -IB2 = 0.2 A, RL = 125 Ω Symbol Min. Max. Unit hFE hFE hFE 8 5 6 40 40 - ICBO - 10 µA IEBO - 10 µA V(BR)CBO 800 - V V(BR)CEO 430 - V V(BR)EBO 9 - V - 0.5 1 3 VBE(sat) - 1 1.2 V fT 4 - MHz ton - 1.1 µs ts - 4 µs tf - 0.7 µs VCE(sat) V ® 2/4 Dated:10/10/2022 CL Rev:04 13003-HAF Electrical Characteristics Curves Fig. 2 DC Current Gain vs. Collector Current Fig. 1 Output Characteristics Curve Fig. 3 VCESAT vs. Collector Current Fig. 4 VBESAT vs. Collector Current (W) 5 Power Derating Curve Fig. 5Fig. Resistive Load Switching Time O C Figure 6. Power Derating ® 3/4 Dated:10/10/2022 CL Rev:04 13003-HAF TO-92 Package Outline (Dimensions in millimeters) 4.7±0.2 1.2±0.1 Min. 12.5 4.7±0.2 1.5X0.1DP~0.2DP 0.4±0.05 1.27±0.1 0.34±0.05 3.6±0.1 1.27±0.1 8° 9±0.5 6±0.3 4±0.2 6.35±0.4 12.7±0.2 ∠0±1 2.54+0.4 -0.1 2.54+0.4 -0.1 18±0.5 0.3±0.2 16±1 19±1 23.65±1 TO-92 Ammo-Pack Outline (Dimensions in millimeters) ∠0±1 ∠0±1 ∠0±1 0.8±0.2 A Packing information Package TO-92 Bulk Packing Ammo-Packing Per Bag Qty Per Box Qty Per Carton Qty Per Box Qty Per Carton Qty 1,000 5,000 50,000 4,000 20,000 ® 4/4 Dated:10/10/2022 CL Rev:04
13003 价格&库存

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