MCL4448

MCL4448 Silicon Epitaxial Planar Switching Diode LS-31 Fast switching diode in MiniMELF case especially suited for automatic surface mounting. Glass Case MicroMELF Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 150 mA Surge Forward Current at t < 1 s IFSM 500 mA Power Dissipation Ptot 500 mW Tj 175 O C Tstg - 65 to + 175 O C Symbol Max. RθJA 300 Junction Temperature Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance from Junction Ambient 1) 1) Unit Valid provided that electrodes are kept at ambient temperature. 1/4 ® Dated : 28/11/2022 Rev:01 MCL4448 Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 C O Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, Irr = 0.1 X IR, VR = 6 V, RL = 100 Ω 2/4 Symbol Min. Max. Unit VF 0.62 - 0.72 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R 100 - V Ctot - 4 pF trr - 4 ns ® Dated : 28/11/2022 Rev:01 MCL4448 Electrical Characteristics Curves Fig 1. Forward Characteritics Fig 2. Reverse Characteritics Fig 3. Junction Capacitance Fig 4. Power Derating Curves 3/4 ® Dated : 28/11/2022 Rev:01 MCL4448 1. 35 G Ma la ss x. LS-31 Package Outline (Dimensions in millimeters) 1.2±0.05 Cathode indification 0.19±0.05 R 5 2. G ss la 2±0.1 Glass case MicroMELF Dimensions in mm technical drawings according to DIN specifications 4/4 ® Dated : 28/11/2022 Rev:01