BAS32L

BAS32L Silicon Epitaxial Planar Switching Diode Features LL-34 • Small hermetically-sealed glass SMD package • High switching speed Application • High-speed switching • Fast logic applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 100 V Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 200 mA IFRM 450 mA Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power dissipation Junction temperature Storage temperature range Ptot 0.5 1 4 500 Tj 175 O C Tstg - 65 to + 175 O C Symbol Max. RθJA 300 IFSM A mW Thermal Characteristics Parameter Thermal Resistance from Junction Ambient 1) 1) Unit Valid provided that electrodes are kept at ambient temperature. 1/3 ® Dated : 08/08/2022 Rev:01 BAS32L Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA at IF = 100 mA, Tj = 100 OC Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC at VR = 75 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 μA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, Irr = 0.1 x IR, VR = 6 V, RL = 100 Ω 2/3 Symbol Min. Max. Unit VF VF VF 620 - 750 1000 930 mV mV mV IR IR IR IR - 25 5 50 100 nA μA μA μA V(BR)R 100 - V Cd - 2 pF trr - 4 ns ® Dated : 08/08/2022 Rev:01 BAS32L Electrical Characteristics Curves Fig 1. Forward Characteritics Fig 2. Reverse Characteritics Fig 3. Junction Capacitance Fig 4. Power Derating Curves 3/3 ® Dated : 08/08/2022 Rev:01