MDD3400

MDD3400 30V N-Channel Enhancement Mode MOSFET 1. Description This 30V N-channel MOSFET is based on MDD's unique device design to achieve low RDS(ON), fast switching and excellent avalanche characteristics. 2. Features • High dense cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability 3. Description • Load Switch for Portable Devices • Switching voltage regulator • DC-DC convertor 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V ID 5.8 A Pulsed Drain Current (Note 1) IDM 23 A Thermal Resistance, Junction-Ambient (Note 2) RθJA 100 °C/W Power Dissipation PD 1.5 W Junction Temperature TJ -50~+150 °C Storage Temperature Tstg -50~+150 °C Continuous Drain Current (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the recommended Operating Conditions may affect device reliability Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJAis measured with the device mounted on 1 in2 FR-4board with 2oz.Copper, double sided, in a still air environment with Ta=25. 3.Pulse test ; Pulse width300us, duty cycle2% Rev：2025A3 MDD3400 30V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Simplified outline Equivalent Circuit R0 1 Package R0 SOT-23 Gate XXX:Date Code Source 2 6. TA=25°C unless otherwise specified Symbol Marking Drain XXX 3 Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 30 — — V Forward VGS=20V — — 100 nA Reverse VGS=-20V — — -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=24V, VGS=0V — — 1 μA Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 0.8 1.2 V VGS=10V, ID=5.8A — 20 32 mΩ VGS=4.5V, ID=5A — 22 35 mΩ VGS=2.5V, ID=4A — 27 45 mΩ Min Typ Max Unit — 635 — pF — 135 — pF — 40 — pF — 10.5 — nC — 1.6 — nC — 2.7 — nC Min Typ Max Unit — 7.5 — ns — 18 — ns — 36 — ns — 5 — ns Min Typ Max Unit VGS(TH) RDS(ON) Drain-Source On-State Resistance 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=15V f=1MHz VGS=4.5V VDS=15V ID=5A 8. Switching Characteristics Symbol td(on) Parameter Condition Turn on Delay Time VGS=4.5V VDS=15V ID=5A RG=3.3Ω Turn on Rise Time tr td(off) tf Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition VSD Drain-Source Diode Forward Voltage IS=3A, VGS=0V — 0.82 1.2 V ISD Source drain current(Body Diode) TA=25°C — — 1.5 A Craftsman-Made Consciention Chip Rev：2025A3 2/5 www.microdiode.com MDD3400 30V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Pulse Width (s) Figure 1. Normalized Maximum Transient Thermal Impedance Figure 2.Switchingtime testcircuit & waveforms The curve above is for reference only. C, Capacitance (pF) VGS, Gate-Source Voltage (V) 11.Electrical Characteristics Diagrams Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig 1. Typical Capacitance Vs. Drain-Source Voltage Craftsman-Made Consciention Chip Rev：2025A3 Fig 2. Typical Gate Charge Vs. Gate-Source Voltage 3/5 www.microdiode.com MDD3400 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) 30V N-Channel Enhancement Mode MOSFET Tj - Junction Temperature (°C) Fig 4. Normalized Threshold Voltage Vs. Temperature ID, Drain-Source Current (A) VDS, Drain -Source Voltage (mV) Figure 3. Typ. output characteristics VGS, Gate -Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area The curve above is for reference only Craftsman-Made Consciention Chip Rev：2025A3 4/5 www.microdiode.com MDD3400 30V N-Channel Enhancement Mode MOSFET 12. Outline Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° 13. Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 14. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev：2025A3 5/5 www.microdiode.com