MDD3400

MDD3400 30V N-Channel Enhancement Mode MOSFET SOT-23 3 V(BR)DSS RDS(on)Typ 27mΩ@10V 30V 29mΩ@4.5V ID Max 1. Gate 5.8A 2. Source 3. Drain 2 1 Application Features High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability z z Marking Load Switch for Portable Devices DC/DC Converter DC/ Equivalent Circuit D G XXX R0 XXX:Date Code S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Pulsed Drain Current (Note 1) IDM 23 A Power Dissipation(Note 2) PD 1.5 W RθJA 100 ℃/W TJ,Tstg -50 ~150 ℃ Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/5 V 1.0 MDD3400 30V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V IDSS Drain-Source Leakage Current VDS=24V, VGS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 0.8 1.2 V VGS=10V, ID=5.8A -- 27 32 mΩ VGS=4.5V, ID=5A -- 29 35 mΩ VGS=2.5V, ID=4A -- 34 45 mΩ Min Typ Max Unit -- 635 -- pF -- 135 -- pF -- 40 -- pF Drain-Source On-State Resistance(Note 3) RDS(ON) Dynamic Electrical Characteristics Symbol Parameter Condition Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=15V -- 10.5 -- nC Qgs Gate Source Charge VGS=4.5V -- 1.6 -- nC Qgd Gate Drain Charge -- 2.7 -- nC Min Typ Max Unit VDS=15V VGS=0V f=1MHz ID=5A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition -- 7.5 -- ns VGS =4.5V -- 18 -- ns ID=5A -- 36 -- ns -- 5 -- ns VDS=15V RG=3.3Ω Source Drain Diode Characteristics Symbol Parameter ISD Source drain current(Body Diode) VSD Drain-Source Diode Forward Voltage Condition = TA 25℃ IS=3A, VGS=0V Min Typ Max Unit -- -- 1.5 A -- 0.82 1.2 V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/5 V 1.0 MDD3400 30V N-Channel Enhancement Mode MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature ID, Drain-Source Current (A) VDS, Drain -Source Voltage (mV) Fig1. Typical Output Characteristics VGS, Gate -Source Voltage (V) VGS, Gate -Source Voltage (V) Fig4. Drain -Source Voltage vs Gate -Source Voltage -ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Fig6. Maximum Safe Operating Area The curve above is for reference only. 3/5 V 1.0 MDD3400 30V N-Channel Enhancement Mode MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. 4/5 V 1.0 MDD3400 30V N-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 5/5 V 1.0