ME3102
1A Step-Down DC-DC Converter ME3102
General Description
Features
The ME3102 is a step-down current-mode, DC-DC
Efficiency up to 96%
converter. At heavy load, the constant-frequency PWM
Only 45μA (TYP.) Quiescent Current
control performs excellent stability and transient
Output Current: Up to 1A
response. To ensure the longest battery life in portable
Internal Synchronous Rectifier
applications, the ME3102 provides a power-saving
1.75MHz/1.4MHz Switching Frequency
pulse -Skipping Modulation (PSM) mode to reduce
Soft Start
quiescent current under light load operation to save
Short Circuit Protection
power.
The ME3102 supports a range of input voltages
from 2.5V to 5.5V, allowing the use of a single
Li+/Li-polymer cell, multiple Alkaline/NiMH cell, USB,
and other standard power sources. The output voltage
is adjustable from 0.6V to the input voltage, while the
part number suffix ME3102 indicates pre-set output
voltage of 3.3V, 2.8V, 2.5V, 1.8V, 1.5V, 1.2V or
adjustable. All versions employ internal power switch
and synchronous rectifier for to minimize external part
count and realize high efficiency. During shutdown, the
input is disconnected from the output and the shutdown
current is less than 0.1μA. Other key features include
under-voltage
lockout
to
prevent
deep
battery
discharge.
Typical Applications
Package
Cellular Phone
5-pin SOT23-5
Portable Electronics
6-pin DFN2*2-6
Wireless Devices
Cordless Phone
Computer Peripherals
Battery Powered Widgets
Electronic Scales
Digital Frame
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ME3102
Typical Application
L 0.6uH-4.7uH
VIN
C1A
22uF
VO
VIN
C1B
0.1
uF
SW
ME3102
CFW
CO
100pF
22uF
R1
GND
FB
R2
EN
Vo=0.6x(1+R1/R2)
Selection Guide
ME 31 02 X X G
Environment mark
Package
M5:SOT23-5
N6A:DFN2*2-6
Version or Function
Product Type
Product Series
Microne
product series
product description
ME3102AM5G
VFB=0.6V;Fosc=1.75MHz;Package:SOT23-5
ME3102BM5G
VFB=0.6V;Fosc=1.4MHz;Package:SOT23-5
ME3102BN6AG
VFB=0.6V; Fosc=1.4MHz;Package:DFN2*2-6
ME3102CN6AG
VFB=0.6V; Fosc=1.4MHz;Package:DFN2*2-6;Different Pin Assignment
NOTE:
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If you need other voltage and package, please contact our sales staff。
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ME3102
Pin Configuration
5
4
1
2
1
6
2
5
3
4
3
SOT23-5
DFN2*2-6
Pin Assignment
Pin Number
(SOT23-5)
Pin Number(DFN2*2-6L)
Name
Function
ME3102A/B
ME3102B
ME3102C
1
3
4
EN
Chip Enable
2
2
6
GND
Ground
3
1
1
SW
Switch
4
5
5
VIN
Input
5
4
3
FB
Feedback
6
2
NC
No Connect
Block Diagram
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ME3102
Absolute Maximum Ratings
Parameter
Power supply voltage, VIN
voltage at EN、FB Pin
voltage at SW Pin
Symbal
Rating
Unit
VIN
6.0
V
VEN,VFB
6.0
V
VSW
-0.3~VIN
V
0.6
mW
1.3
mW
SOT23-5
Internal Power Dissipation
PD
DFN2*2-6
SOT23-5
210
θJA
Thermal resistance
DFN2*2-6
ºC/W
95
Operating Ambient Temperature
Topr
-40~+85
°C
Storage Temperature
Tstg
-55~+150
°C
Tsolder
260(10S)
°C
Soldering temperature and time
Electrical Characteristics
VIN=3.6V, VO=1.8V, CIN =22μF//0.1uF, CO =22μF, L=2.2μH,T A =25 °C, unless otherwise noted.
Parameter
Symbol
Test condition
Min
Typ.
Max
Unit
Input voltage range
VIN
2.5
-
5.5
V
Regulated Feedback Voltage
VFB
0.588
0.6
0.612
V
Regulated Output Voltage Accuracy
VO
IO =100mA
-3
-
+3
%
Output Voltage Line Regulation
LNR
VIN = 2.5V to5V,Io=10mA
-
0.2
0.5
%/V
Output Voltage Load Regulation
LDR
Io=1.0mA to 800mA
-
0.5
1.5
%
Quiescent Current
IQ
No load
-
45
70
μA
Shutdown Current
ISD
VEN=0V
-
0.1
1
μA
Current limiting protection
Ilimit
SW Leakage Current
ILSW
1.6
-1
VO=100%
Oscillator Frequency
FOSC
A
1
ME3102A
1.45
1.75
2.1
ME3102B/C
1.2
1.4
1.8
VFB=0V or
ME3102A
600
VO=0V
ME3102B/C
500
μA
MHz
KHz
P MOSFET
-
0.3
0.6
Ω
N MOSFET
-
0.3
0.6
Ω
η
-
96
-
%
EN Threshold High
VEH
1.5
-
-
V
EN Threshold Low
VEL
-
-
0.3
V
Drain-Source On-State Resistance
High Efficiency
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RDS(ON)
IDS=100mA
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ME3102
Typical Performance Characteristics
1. Efficiency VS Output Current (VO=1.8V)
Efficiency VS Output Current (VO=3.3V)
Efficiency VS.Output Current (Vo=3.3V)
Efficiency VS.Output Current (Vo=1.8V)
100
100
90
80
Efficiency (%)
Efficiency (%)
90
70
VIN =4.2V
60
VIN =2.5V
VIN =3.6
50
80
VIN=3.6
70
VIN=4.2V
60
VIN =5V
50
40
40
30
30
1
1
10 100 200 300 400 500 600 700 800 900 1000
10
100
200
2. Efficiency VS Input Voltage (VO=1.8V)
100
90
90
Efficiency(%)
100
Efficiency(%)
600
700
800
900 1000
Efficiency VS.Input Voltage (Vo=3.3V)
80
70
IO=800
IO=100
50
40
80
70
IO=10mA IO=100m
IO=800m
60
50
40
30
30
2.5
3
3.5
4
4.5
5
5.5
3.6
3.75
4
4.25
3. VFB VS Input Voltage
4.75
5
5.25
5.5
4. VFB VS Output Current
VFB VS Output Current
VFB VS Input Voltage
0.606
0.604
0.602
0.6
0.598
0.596
0.594
0.592
0.59
0.588
4.5
Input Voltage(V)
Input Voltage(V)
0.608
0.604
VFB(V)
VFB(V)
500
Efficiency VS Input Voltage (VO=3.3V)
Efficiency VS.Input Voltage (Vo=1.8V)
IO=10m
400
Output Current(mA)
Output Current (mA)
60
300
IO=100mA
3.5
4
4.5
5
5.5
VIN =3.6V
0
200
400
600
VIN=4.2V
800
Output Current(mA)
Input Voltage(V)
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0.592
0.584
IO=600mA
3
0.596
0.588
IO=800mA
2.5
VIN =2.5V
0.6
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1000
ME3102
5. Output Voltage VS Output Current (VO=1.8V)
6. VFB VS Temperature
VFB VS Temperature
1.83
0.608
1.82
0.606
0.604
1.81
V FB ( V)
Output Voltage (V)
Output Voltage VS Output Current (Vo=1.8V)
1.8
1.79
0.602
0.6
0.598
0.596
1.78
VIN=2.5V
VIN=5V
VIN=3.6 VIN=4.2
0.594
1.77
0.592
10 100 200 300 400 500 600 700 800 900 1000
-25
0
25
50
75
100
Temperature(℃)
Output Current(mA)
7. Dynamic Supply Current VS Input Voltage
(VO=1.8V)
8. Dynamic Supply Current VS Temperature
(V IN=3.6V,VO=1.8V)
Supply Current VS Input Voltage
50
Supply Current(uA)
45
40
35
30
25
20
15
10
2.5
3
3.5
4
4.5
5
5.5
Input Voltage(V)
9. Oscillator Frequency VS Input Voltage
Oscillator Frequency (MHz)
Oscillator Frequency VS Input Voltage
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
2.5
3
3.5
4
4.5
5
5.5
6
Input Voltage(V)
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125
150
ME3102
Application Information
The basic ME3102 application circuit is shown as up figures. External component selection is determined by the
load requirement, selecting L first and then CIN and COUT 。It is better to use the patch ceramic capacitors at COUT..
Inductor Selection
For most applications, the value of the inductor will fall in the range of 0.6μH to 4.7μH. Its value is chosen based
on the desired ripple current. Large value inductors lower ripple current and small value inductors result in higher
ripple currents. Higher VIN or VOUT also increases the ripple current as shown in equation 1. A reasonable starting
point for setting ripple current is △IL=400mA (40% of 1A).
IL =
V
1
VOUT 1 OUT
f L
VIN
The DC current rating of the inductor should be at least equal to the maximum load current plus half the ripple
current to prevent core saturation. Thus, a 2A rated inductor should be enough for most applications. For better
efficiency, choose a low DC-resistance inductor.
VO
0.6V
1.2V
1.5V
1.8V/2.5V/2.8V/3.3V
L
0.6uH
1.2μH
1.5μH
2.2μH/3.3μH/4.3μH
CIN and COUT Selection
In continuous mode, the source current of the top MOSFET is a square wave of duty cycle V OUT/VIN. To prevent
large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum
RMS capacitor current is given by: CIN required
IRMS IOMAX
VOUT VIN VOUT
VIN
1
2
This formula has a maximum at VIN=2VOUT, where IRMS=IOUT/2. This simple worst-case condition is commonly
used for design because even significant deviations do not offer much relief. Note that the capacitor manufacturer's
ripple current ratings are often based on 2000 hours of life. This makes it advisable to further derate the capacitor, or
choose a capacitor rated at a higher temperature than required. Consult the manufacturer if there is any question.
The selection of COUT is driven by the required effective series resistance (ESR). Typically, once the ESR
requirement for COUT has been met, the RMS current rating generally far exceeds the IRIPPLE (P-P) requirement.
The output ripple △VOUT is determined by:
1
VOUT IL ESR
8fCOUT
Where f = operating frequency, COUT=output capacitance and ΔIL= ripple current in the inductor. For a fixed output
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ME3102
voltage, the output ripple is highest at maximum input voltage since ΔI increases with input voltage.
Using Ceramic Input and Output Capacitors
Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple
current, high voltage rating and low ESR make them ideal for switching regulator applications. Using ceramic
capacitors can achieve very low output ripple and small circuit size.
When choosing the input and output ceramic capacitors, choose the X5R or X7R dielectric formulations. These
dielectrics have the best temperature and voltage characteristics of all the ceramics for a given value and size.
Setting the Output Voltage
The internal reference is 0.6V (Typical). The output voltage is calculated as below:
R1
VO 0.6 1
R2
The output voltage is given by Table 1.
Table 1: Resistor selection for output voltage setting
VO (V)
R1 (KΩ)
R2 (KΩ)
1.2
100
100
1.5
150
100
1.8
200
100
2.5
380
120
3.3
540
120
100% Duty Cycle Operation
As the input voltage approaches the output voltage, the converter turns the P-channel transistor continuously on.
In this mode the output voltage is equal to the input voltage minus the voltage drop across the P- channel transistor:
VOUT V ILOAD RDSON RL
where RDSON= P-channel switch ON resistance, ILOAD= Output current , RL= Inductor DC resistance
Soft-Start
The ME3102 has an internal soft-start circuit that limits the in-rush current during start-up. This prevents
possible voltage drops of the input voltage and eliminates the output voltage overshoot.
Short Circuit Protection
The switch peak current is limited cycle-by-cycle to a typical value of 1600mA. In the event of an output voltage
short circuit, the device operates with a frequency of 600KHz and minimum duty cycle, therefore the average input
current is typically 200mA.
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ME3102
PCB Layout Check List
VIA TO VIN
VIA TO VOUT
VIA TO VIN
VIA TO VOUT
When laying out the printed circuit board, the following checklist should be used to ensure proper operation of
the ME3102.
1. The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short, direct
and wide.
2. Does the VFB pin connect directly to the feedback resistors? The resistive divider R1/R2 must be connected
between the (+) plate of COUT and ground.
3. Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC current to
the internal power MOSFETs.
4. Keep the switching node, SW, away from the sensitive VFB node.
5. Keep the (–) plates of C and COUT as close as possible.
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ME3102
Package Information
Package type:SOT23-5
DIM
Millimeters
Inches
Min
Max
Min
Max
A
1.05
1.45
0.0413
0.0571
A1
0
0.15
0.0000
0.0059
A2
0.9
1.3
0.0354
0.0512
A3
0.6
0.7
0.0236
0.0276
b
0.25
0.5
0.0098
0.0197
c
0.1
0.23
0.0039
0.0091
D
2.82
3.05
0.1110
0.1201
e1
1.9(TYP)
0.0748(TYP)
E
2.6
3.05
0.1024
0.1201
E1
1.5
1.75
0.0512
0.0689
e
L
0.95(TYP)
0.25
L1
θ
c1
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0.0374(TYP)
0.6
0.0098
0.59(TYP)
0
0.0236
0.0232(TYP)
8°
0.2(TYP)
0.0000
8°
0.0079(TYP)
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Page 10 of 12
ME3102
Package type:DFN2*2-6
DIM
Millimeters
Inches
Min
Max
Min
Max
A
0.7
0.8
0.0276
0.0315
A1
0
0.05
0
0.002
A2
0.203(TYP)
0.008(TYP)
b
0.2
0.35
0.0078
0.0138
D
1.9
2.1
0.0748
0.0827
E
1.9
2.1
0.0748
0.0827
E1
0.5
0.9
0.0197
0.0354
e
0.65(TYP)
0.0256(TYP)
L
0.25
0.426
0.0098
0.0168
K
0.2
一
0.0079
一
D1
1
1.45
0.0393
0.0571
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ME3102
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The information described herein is subject to change without notice.
Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or
diagrams described herein whose related industrial properties, patents, or other rights
belong to third parties. The application circuit examples explain typical applications of the
products, and do not guarantee the success of any specific mass-production design.
Use of the information described herein for other purposes and/or reproduction or copying
without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting
the human body, such as exercise equipment, medical equipment, security systems, gas
equipment, or any apparatus installed in airplanes and other vehicles, without prior written
permission of Nanjing Micro One Electronics Inc.
Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure
high quality and reliability, the failure or malfunction of semiconductor products may occur.
The user of these products should therefore give thorough consideration to safety design,
including redundancy, fire-prevention measures, and malfunction prevention, to prevent any
accidents, fires, or community damage that may ensue.
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