30SQ045

30SQ045  Schottky Diodes Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7s, per JESD 22-B106 Typical Applications Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection Mechanical Data ● Package: R-6 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD002 and JESD22-B102 ● Polarity: Color band denotes cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 30SQ045 30SQ045 Device Marking Code Repetitive Peak Reverse Voltage Average Rectified Output Current @60Hz sine wave, R-load, Ta=25℃ Surge(Non-repetitive)Forward Current @60Hz half sine wave, 1 cycle, Ta=25℃ Current Squared Time @1ms≤t≤8.3ms Tj=25℃ Storage Temperature Junction Temperature IN DC Forward Mode-Forward Operations，without reverse bias, t ≤1 h (Fig. 1)① VRRM V 45 IO A 30 IFSM A 380 I2t As Tstg ℃ -55 ~+150 Tj ℃ -55 ~+200 2 599 NOTE ① Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test. ■Electrical Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL UNIT VFM V IRRM1 mA IRRM2 TEST CONDITIONS 30SQ045 0.55 IFM=30.0A VRM=VRRM Ta=25℃ VRM=VRRM Ta=100℃ 0.5 50 ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER Thermal Resistance Between junction and case ht t p : // Revision:20210701-P1 SYMBOL UNIT 30SQ045 RθJ-C ℃/W 2.5 www.lgesem i .c o m mail:lge@lgesemi.com 30SQ045  ■Ordering Information (Example) PREFERED P/N UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 30SQ045 Approximate 2.02 500 10 5000 Tape 30SQ045 Approximate 2.02 1000 4 4000 Reel ■Characteristics (Typical) FIG1:Io -Tc Curve FIG2:Surge Forward Current Capability 600 Peak Forward Surge Current (A) Average Forward Output Current (A) 30.0 24.0 IN DC 18.0 12.0 6.0 0 8.3ms Single Half Sine-Wave JEDEC Method 500 400 300 200 100 0 100 50 150 0 200 1 2 5 Case Temperature（℃） 100 FIG4: Typical Reverse Characteristics Instantaneous Reverse Current (mA) Instantaneous Forward Current (A) 50 100 100 10 1.0 0 0.2 0.8 0.6 Instantaneous Forward Voltage (V) 0.4 ht t p : // 10 Tj=100℃ 1.0 0.1 Tj=25℃ Ta=25℃ Revision:20210701-P2 20 Number of Cycles FIG3: Forward Voltage 0.1 10 1.0 0.01 0 20 40 60 80 Percent of Rated Peak Reverse Voltage (%) 100 www.lgesem i .c o m mail:lge@lgesemi.com 30SQ045  ■Outline Dimensions R-6 R -6 Dim Min Max A 25.4 / B C 1.2 1.3 8.6 9.1 D 8.6 9.1 D im ensions in m illim eters ht t p : // Revision:20210701-P3 www.lgesem i .c o m mail:lge@lgesemi.com