BC807

BC807-16/-25/-40 PNP Silicon Epitaxial Planar Transistor Features  Epitaxial planar die construction  Complimentary to BC817  High collector current  High current gain  Low collector-emitter saturation voltage SOT-23 Mechanic al Data Case: SOT-23  Molding compound: UL flammability classification rating 94V-0  Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 Ordering Information nd uc to r  Package Shipping Quantity Marking Code BC807-16 SOT-23 3000 pcs / Tape & Reel 5A BC807-25 SOT-23 3000 pcs / Tape & Reel 5B BC807-40 SOT-23 3000 pcs / Tape & Reel 5C mi co Part Number Maximum Ratings (@ TA = 25°C unless otherwise specified) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Se Parameter Symbol Value Unit VCBO -50 V VCEO -45 V VEBO -5 V IC -0.5 A O Emitter-Base Breakdown Voltage CR Continuous Collector Current MI Thermal Characteristics Symbol Value Unit PD 300 mW Thermal Resistance Junction-to-Air *1 RθJA 395 °C/W Thermal Resistance Junction-to-Case *1 RθJC 218 °C/W Thermal Resistance Junction-to-Lead *1 RθJL 191 °C/W TJ -55 ~ +150 °C TSTG -55 ~ +150 °C JS Parameter Power Dissipation Operating junction Temperature Storage Temperature Range Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B www.jsmsemi.com 第１页，共４页 BC807-16/-25/-40 PNP Silicon Epitaxial Planar Transistor Electrical Characteristics (@ TA = 25°C unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit V(BR)CBO IC = -10μA, IE = 0 -50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -10mA, IB = 0 -45 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10μA, IC = 0 -5 - - V Collector Cut-off Current ICBO VCB = -25V, IE = 0 - - -100 nA Emitter Cut-off Current IEBO VEB = -4V, IC = 0 - - -100 nA BC807-16 100 VCE = -1V, IC = -100mA BC807-40 DC Current Gain BC807-16 - 352 400 - 418 600 - 60 - - - 100 - - - 170 - - - VCE = -1V, IC = -500mA 40 - - - VCE = -1V, IC = -300mA BC807-40 BC807-40 250 250 hFE BC807-25 160 197 nd uc t BC807-25 or Collector-Base Breakdown Voltage VCE(sat) IC = -500mA, IB = -50mA - - -0.7 V Base-emitter Saturation Voltage VBE(sat) IC = -500mA, IB = -50mA - - -1.2 V IC = -10mA, VCE = -5V - 200 - MHz VCB = -10V, IE = 0, f = 1MHZ - - 10 pF fT Transition Frequency COBO JS MI CR O Se Collector Output Capacitance mi co Collector-emitter Saturation Voltage www.jsmsemi.com 第２页，共４页 BC807-16/-25/-40 PNP Silicon Epitaxial Planar Transistor Ratings and Characteristics Curves (@ TA = 25°C unless otherwise specified) 500 800 VCE = -1V 400 600 500 TA = 150 ℃ hFE 200 TA = 150 ℃ 400 300 TA = 25℃ TA = -55 ℃ 1 TA = -55 ℃ 100 0 0.1 10 1000 100 0.1 hFE vs. IC (BC807-16) 1400 VCE = -1V 1200 -VBEon（mV） 700 TA = 150℃ 400 TA = 2 5 ℃ Se 300 200 TA = -55℃ 100 0.1 1 10 100 800 600 TA = 25℃ 400 T = 1 50℃ A 200 0 1000 1 0.1 10 -IC（mA） O CR hFE vs. IC (BC807-40) 1400 -VBESAT（mV） -VCESAT （mV） IC/IB = 10 1200 IC /IB = 10 100 TA = 150℃ 1000 TA = -5 5℃ 800 T = 25℃ 600 A 400 TA = 25℃ 10 1000 Fig 4 VBE(ON) vs. IC JS 1000 100 -IC（mA） MI Fig 3 1000 TA = -55 ℃ 1000 600 500 100 VCE = -1V mi co 800 hFE 10 Fig 2 hFE vs. IC (BC807-25) 900 0 1 -IC（mA） -IC（mA） Fig 1 or 100 TA = 25℃ 200 nd uc t hFE 300 0 VCE = -1V 700 TA = 150℃ 200 TA = -55 ℃ 0.1 1 10 100 1000 0 0.1 Fig 5 1 10 100 1000 -IC（mA） -IC（mA） VCE(sat) vs. IC Fig 6 VBE(sat) vs. IC www.jsmsemi.com 第３页，共４页 BC807-16/-25/-40 PNP Silicon Epitaxial Planar Transistor Package Outline Dimensions (Unit: mm) A SOT-23 K Dimension Min. Max. A 2.70 3.10 B 1.10 1.50 C 0.9 1.1 D 0.3 0.5 E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.05 0.15 K 2.20 2.60 B J D G Package Outline Dimensions (Unit: mm) 0.95 Se 0.95 mi co SOT-23 nd uc t H C or E 2.00 CR O 0.90 JS MI 0.80 www.jsmsemi.com 第４页，共４页