SC3404MI

SC 3404MI 30V N-Channel Enhancement Mode MOSFET Description The SC3404MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6A RDS(ON) < 25mΩ @ VGS=10V Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) SC3404MI SOT-23-3L 3404 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current 6 A ID@TA=70℃ Continuous Drain Current 4.9 A IDM Pulsed Drain Current2 20 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 85 ℃/W 1 TEL:0755-27668758/29469758 web:http://www.zgsemi.com www.086ic.cn SC 3404MI 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 32 --- V △BVDSS/△TJ BVDSS Temperature Coefficient V/℃ RDS(ON) RDS(ON) Reference to 25℃ , ID=1mA --- 0.029 --- Static Drain-Source On-Resistance2 VGS=10V , ID=5.8A --- 20 25 Static Drain-Source On-Resistance2 VGS=4.5V , ID=5A --- 28 32 1.2 1.6 2.5 V --- -2.82 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 mΩ VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 --- Ω Qg Total Gate Charge (4.5V) --- 11.5 --- Qgs Gate-Source Charge --- 1.6 --- Qgd Gate-Drain Charge --- 2.9 --- Td(on) Turn-On Delay Time --- 5 --- Tr Rise Time VDD=15V , VGS=10V , RG=3Ω --- 47. --- Td(off) Turn-Off Delay Time ID=5A --- 26 --- Tf Fall Time --- 8 --- Ciss Input Capacitance --- 860 --- Coss Output Capacitance --- 84 --- Crss Reverse Transfer Capacitance --- 70 --- IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 5.8 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V VSD Diode Forward Voltage2 VGS=VDS , ID =250uA VDS=15V , VGS=4.5V , ID=5.8A VDS=15V , VGS=0V , f=1MHz uA nC ns pF Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 TEL:0755-27668758/29469758 web:http://www.zgsemi.com www.086ic.cn SC 3404MI 30V N-Channel Enhancement Mode MOSFET Typical Characteristics 30 RD S O N( m Ω ) ID= 1 0 A 25 20 15 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage IS Source Current(A) 6 4 TJ=150℃ 2 0 0.00 0.25 0.50 TJ=25℃ 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) TEL:0755-27668758/29469758 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ web:http://www.zgsemi.com www.086ic.cn 3 Fig.5 Normalized VGS(th) vs. TJ 150 SC 3404MI 30V N-Channel Enhancement Mode MOSFET 1000 100.00 F=1.0MHz Ciss 100us Capacitance (pF) 10.00 ID (A) 1ms 100 Coss 10ms 100ms DC 1.00 Crss 0.10 Tc=25o C Single Pulse 10 1 5 9 13 17 21 25 0.01 0.1 VDS Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON 0.02 0.01 T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Td(off) Ton Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform 4 TEL:0755-27668758/29469758 web:http://www.zgsemi.com www.086ic.cn SC 3404MI 30V N-Channel Enhancement Mode MOSFET Package Mechanical Data-SOT23-3 Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° 5 TEL:0755-27668758/29469758 web:http://www.zgsemi.com www.086ic.cn