LL4148PF

LL4148PF Silicon Epitaxial Planar Switching Diode Fast switching diode in MiniMELF case especially LL-34 suited for automatic surface mounting Features • Lead Free Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA IFSM 0.5 1 4 A Ptot 500 mW Tj 175 Tstg - 65 to + 175 Symbol Max. RθJA 300 Average Rectified Forward Current at t = 1 s at t = 1 ms at t = 1 μs Non-repetitive Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance from Junction Ambient 1) 1) Unit Valid provided that electrodes are kept at ambient temperature. 1/3 ® Dated: 09/12/2021 Rev: 02 LL4148PF Characteristics at Ta = 25 Symbol Min. Max. Unit V(BR)R 100 - V VF - 1 V IR IR IR - 25 5 50 nA µA µA Ctot - 4 pF Vfr - 2.5 V trr - 4 ns ηV 0.45 - - Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 Capacitance at VR = 0, f = 1 MHz Voltage Rise when Switching on tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz 2nF 5K ~ ~ ~ VRF =2V 60 Reverse Recovery Time at IF = 10 mA, Irr = 0.1 X IR , VR = 6 V, RL = 100 Ω Rectification Efficiency at f = 100 MHz, VRF = 2 V Vo Parameter Rectification Efficiency Measurement Circuit 2/3 ® Dated: 09/12/2021 Rev: 02 LL4148PF Electrical Characteristics Curves Fig 1. Forward Characteritics Fig 2. Reverse Characteritics Fig 3. Junction Capacitance Fig 4. Power Derating Curves 3/3 ® Dated: 09/12/2021 Rev: 02