PESDNC2FD3V3BS
Bi-directional 3.3V Normal Capacitance ESD Protector
Description
The PESDNC2FD3V3BS protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage
induced transient events. They feature large cross-sectional area junctions
for
conducting
high
transient
currents,
offer
desirable
electrical
characteristics for board level protection, such as fast response time, low
operating voltage. It gives designer the flexibility to protect one bi-directional
line in applications where arrays are not practical.
DFN1006-2L(Bottom View)
Feature
➢
DFN1006-2L package
➢
Replacement for MLV(0402)
➢
Bidirectional configurations
➢
Response time is typically < 1ns
➢
Low clamping voltage
➢
RoHS compliant
➢
Transient protection for data lines to IEC61000-4-2(ESD)
Pin 1
Pin 2
Circuit Diagram
±25kV(air), ±25kV(contact); IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
➢
Cellular phones
➢
Portable devices
➢
Digital cameras
➢
Power supplies
PA
Marking (Top View)
Mechanical Characteristics
➢
Mounting position: Any
➢
Qualified max reflow temperature:260℃
➢
Device meets MSL 1 requirements
➢
DFN1006-2L without plating
Rev.06.7
1
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ESD Protector
PESDNC2FD3V3BS
Electronics Parameter
Symbol
Parameter
VRWM
Peak Reverse Working Voltage
IR
Reverse Leakage Current @ VRWM
VBR
I
IPP
Breakdown Voltage @ IT
IT
Test Current
IPP
Maximum Reverse Peak Pulse Current
VC VBR VRWM
VC
Clamping Voltage @ IPP
PPP
Peak Pulse Power
CJ
Junction Capacitance
IF
Forward Current
VF
Forward Voltage @ IF
IT
I
R
V
I
VRWM VBR VC
R
IT
IPP
Electrical characteristics per line@25℃ (unless otherwise specified)
Parameter
Reverse Stand-off Voltage
Symbol
Conditions
Min.
It = 1mA
IR
VRWM = 3.3V T=25℃
Clamping Voltage
VCL
IPP=16A tp=100ns
Clamping Voltage
VC
IPP=5A tP = 8/20μs
Junction Capacitance
Cj
Reverse Leakage Current
Max.
Units
3.3
V
6.5
V
1.0
μA
VRWM
VBR
Reverse Breakdown Voltage
Typ.
VR=0V
4.5
10
V
10.5
f = 1MHz
9.5
V
pF
Absolute maximum rating@25℃
Rating
Symbol
Value
Units
Unidirectional Peak Pulse Power
Ppp
60
W
Operating Temperature
TJ
-55 to 150
℃
TSTG
-55 to 150
℃
Storage Temperature
Rev.06.7
2
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ESD Protector
PESDNC2FD3V3BS
Typical Characteristics
100
100
% Of Rated Power
IPP – Peak Pulse Current - % of
IPP
tf=8μs
80
60
tP =20μ s(IPP /2)
40
20
80
60
40
20
0
0
0
5
10
15
20
25
30
0
25
t - Time -μs
Fig 1.Pulse Waveform
50
75
100
TL – Lead Temperature - ℃
125
150
Fig 2.Power Derating Curve
1000
40
30
TLP Current(A)
Peak Pulse Power (W)
20
100
10
0
-10
10
-20
-30
-40
1
1
10
100
Pulse Duration(us)
1000
Fig 3. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.7
3
-18
-12
-6
0
6
TLP Voltage(V)
12
Fig 4.TLP Measurement
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18
ESD Protector
PESDNC2FD3V3BS
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec
280
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
➢
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
➢
Do not make false economies and save copper for the ground connection.
➢
Place via holes to ground as close as possible to the anode of the TVS diode.
➢
Use as many via holes as possible for the ground connection.
➢
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.7
4
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ESD Protector
PESDNC2FD3V3BS
Product dimension (DFN1006-2L)
A
Inches
Millimeters
Dim
B
C
R
D
E
MIN
MAX
MIN
MAX
A
0.013
0.020
0.34
0.498
B
0.000
0.002
0.00
0.05
C
0.037
0.043
0.95
1.080
D
0.022
0.027
0.55
0.680
E
0.016
0.024
0.40
0.60
F
0.008
0.012
0.20
0.30
H
R
F
0.015Typ.
0.001
0.40Typ.
0.005
0.05
0.15
H
Suggested
PCB Layout
Ordering information
Device
Package
Reel
Shipping
PESDNC2FD3V3BS
DFN1006-2L (Pb-Free)
13"
40000 / Tape & Reel
Rev.06.7
5
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ESD Protector
PESDNC2FD3V3BS
Load with information
USER DIRECTION OF FEED
Φ1.50 ± 0.10
2.00 ± 0.05
2.00 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
3.50 ± 0.05
8.00 ± 0.10
Φ0.50 ± 0.05
Unit:mm
Rev.06.7
6
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ESD Protector
PESDNC2FD3V3BS
IMPORTANT NOTICE
and
are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi
assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices, Should you
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
Website: http://www.prisemi.com
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
Rev.06.7
7
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