PE507BA

PE507BA P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM PDFN 3x3P Halogen-free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 14mΩ -42A D D D D G #1 S S G : GATE D : DRAIN S : SOURCE S S G ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current 3 TC = 25 °C -42 TC = 100 °C -26 ID TA = 25 °C -12 TA = 70 °C Pulsed Drain Current 1 IDM -80 IAS -42 EAS 87 Avalanche Current Avalanche Energy Power Dissipation L = 0.1mH 4 A -9.7 TC = 25 °C 37 TC = 100 °C 15 PD TA = 25 °C mJ W 3.1 TA = 70 °C 2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient 2 t ≦10s RθJA 40 Junction-to-Ambient 2 Steady-State RθJA 60 RJC 3.3 Junction-to-Case UNITS °C / W 1 Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3 Package limitation current is 22A 4 The Power dissipation is based on RJA t ≦10s value. 2 REV1.2 K-11-3 1 PE507BA P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM PDFN 3x3P Halogen-free & Lead-Free ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 VGS(th) VDS = VGS, ID = -250A -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 VDS = -24V, VGS = 0V -1 Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 55 °C -10 Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance 1 1 V -1.5 -3 VGS = -4.5V, ID = -9A 14.5 22 RDS(ON) VGS = -10V, ID = -10A 9.6 14 gfs VDS = -10V, ID = -10A 32 nA A mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge 2 2 2 Turn-Off Delay Time Fall Time 2 2 Turn-On Delay Time Rise Time VGS = 0V, VDS = -15V, f = 1MHz 2 2 365 pF 327 VGS = 0V, VDS = 0V, f = 1MHz Qg Gate-Source Charge Gate-Drain Charge 2100 Ω 3 49.1 VDS = -15V , VGS = -10V, ID = -10A Qgs 6 Qgd 12.3 td(on) 24 tr VDD = -15V 24 td(off) ID  -10A, VGS = -10V, RGEN = 6Ω 85 tf nC nS 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current Forward Voltage 1 IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = -10A, VGS = 0V IF=-10A, dI/dt=100A/μs -30 A -1.2 V 20.5 nS 8.3 uC Pulse test : Pulse Width  300 sec, Duty Cycle  2%. Independent of operating temperature. 1 2 REV1.2 K-11-3 2 P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM PDFN 3x3P Halogen-free & Lead-Free Output Characteristics Transfer Characteristics 50 VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-4V 40 -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) 50 30 VGS=-3V 20 10 VGS=-2.5V 0 40 30 20 25℃ 10 125℃ -20℃ 0 0 1 2 3 4 5 0 1 -VDS, Drain-To-Source Voltage(V) 3 4 5 Capacitance Characteristic 2500 VDS=-15V ID=-10A 8 C , Capacitance(pF) -VGS , Gate-To-Source Voltage(V) 2 -VGS, Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics 10 6 4 2 2000 CISS 1500 1000 500 COSS CRSS 0 0 0 10 20 30 40 50 0 6 Qg , Total Gate Charge(nC) 0.03 12 18 24 30 -VDS, Drain-To-Source Voltage(V) On-Resistance VS Drain Current On-Resistance VS Gate-To-Source Voltage 0.02 0.025 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) PE507BA 0.02 0.015 0.01 0.005 ID=-10A 0 0.015 VGS=-4.5V 0.01 VGS=-10V 0.005 0 3 4 5 6 7 8 9 10 0 -VGS, Gate-To-Source Voltage(V) 10 20 30 40 50 -ID , Drain-To-Source Current(A) REV1.2 K-11-3 3 PDFN 3x3P Halogen-free & Lead-Free On-Resistance VS Temperature Source-Drain Diode Forward Voltage 100 1.4 -IS , Source Current(A) Normalized Drain to Source ON-Resistance 1.5 1.3 1.2 1.1 1.0 0.9 125℃ 25℃ 10 1 VGS=-10V ID=-10A 0.8 0.7 0.1 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 TJ , Junction Temperature(˚C) 0.6 0.8 1.0 1.2 1.4 -VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation 100 120 10 Power(W) -ID , Drain Current(A) PE507BA P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM 1ms 10ms 1 Operation in This Area is Limited by RDS(ON) 0.1 90 60 100ms 1S 10S NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 60˚C/W 4.Single Pulse 30 DC 0 0.001 0.01 0.1 Single Pulse RθJA = 60˚C/W TA=25˚C 1 10 100 0.01 0.1 -VDS, Drain-To-Source Voltage(V) 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 1 Duty cycle=0.5 0.2 0.1 0.1 0.05 Notes 0.02 0.01 0.01 0.001 0.0001 single pulse 0.001 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.01 0.1 1 10 100 1000 T1 , Square Wave Pulse Duration[sec] REV1.2 K-11-3 4