CCMC03N120

SHENZHEN CLOUDCHILD TECHNOLOGY CO., LTD TO-252 Silicon N-Channel Power MOSFET CCMC03N120 N-Channel MOSFET VDSS RDS(ON)(Typ.) ID 1200V 6.7Ω 3A Applications: ● ● ● Adaptor Electric welder SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves ● AEC Q101 Qualified Ordering Information PART NUMBER CCMC03N120 PACKAGE TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM PD VGS EAS dv/dt Tj=25℃unless otherwise specified Parameter Rating Drain-to-Source Voltage Units 1200 V 3 1.8 A A 12 A Power Dissipation TC =25℃ 83 W Derating Factor above 25℃ Gate-to-Source Voltage 0.8 ±30 W/℃ V Single Pulse Avalanche Energy(NOTE *2) 30 mJ Peak Diode Recovery dv/dt(NOTE *3) 5 V/ns Continuous Drain Current TC =25℃ Continuous Drain Current TC =100℃ Pulsed Drain Current (NOTE *1) Operating Junction and Storage TJ and TSTG ℃ 175，-55 to175 Temperature Range Thermal Resistance Symbol Parameter Max. Units ℃∕W RθJC Junction-to-Case 1.5 RθJA Junction-to-Ambient 120 www.cloudchild.cn Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃. 1 cubic foot chamber, free air. Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS OFF Characteristics Symbol BVDSS IDSS Tj=25℃unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units Test Conditions 1200 -- -- V VGS=0V, ID=250μA -- -- 25 VDS=1200V, VGS=0V μA Drain-to-Source Leakage Current -- -- TJ=25℃ VDS=960V, VGS=0V 250 TJ=125℃ IGSS Gate-to-Source Forward Leakage -- -- +100 Gate-to-Source Reverse Leakage -- -- -100 ON Characteristics Symbol nA VGS=+30V VGS= -30V TJ=25℃unless otherwise specified Parameter Min. Typ. Max. Units Test Conditions RDS(ON) StaticDrain-to-Source On-Resistance -- 6.7 9 Ω VGS=10V, ID=1.5A VGS(TH) Gate Threshold Voltage 3 -- 5 V VDS=VGS,ID=250μA gfs Forward Transconductance -- 5 -- S VDS=15V, ID=1.5A Pulse width ≤300μs; duty cycle≤ 2% Dynamic Characteristics Symbol Essentially independent of operating temperature Parameter Min. Typ. Max. Units Rg Gate resistance -- 2.2 -- Ciss Coss Input Capacitance -- 1006 -- Output Capacitance -- 59.8 -- Crss Qg Reverse Transfer Capacitance -- 2.2 -- Total Gate Charge -- 19.7 -- Qgs Gate-to-Source Charge -- 7.5 -- Qgd Gate-to-Drain (“Miller”) Charge -- 5.4 -- Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time trise Rise Time td(OFF) Turn-Off Delay Time tfall Fall Time www.cloudchild.cn Test Conditions Ω f = 1.0MHz pF VGS= 0V,VDS = 25V f =1.0MHz nC ID=3A,VDD=960V VGS = 10V Essentially independent of operating temperature Min. Typ. Max. Units Test Conditions -15.1 -VDD=600V, ID=3A, -19.4 -ns VG=10V RG=10Ω -25.6 --- 76.2 -- Rev. - 1.0 Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) Tj=25℃unless otherwise specified Min. Typ. Max. Units -- -- 3 A Test Conditions TC=25℃ -- -- 12 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 526 -- ns IF= IS nC di/dt=100A/us Qrr Reverse Recovery Charge -- 2000 -- ISD=3A, VGS=0V Pulse width ≤300μs; duty cycle ≤ 2% Notes: *1. Repetitive rating; pulse width limited by maximum junction temperature. *2. L=10mH, ID=2.5A, Start TJ=25℃ *3. ISD =3A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ *4. Recommend soldering temperature defined by IPC/JEDEC J-STD 020 www.cloudchild.cn Rev. - 1.0 Characteristics Curve： Figure 1 Maximum Continuous Drain Current vs Figure 2 Typical Output Characteristics Case Temperature Figure 3 Typical Transfer Characteristics www.cloudchild.cn Figure 4 Typical Body Diode Transfer Characteristics Rev. - 1.0 Figure 5 Typical Drain to Source ON Resistance vs Drain Current Figure 7 Typical Theshold Voltage vs Figure 6 Typical Drian to Source on Resistance vs Junction Temperature Figure 8 Typical Breakdown Voltage vs Junction Junction TemperatureTemperature www.cloudchild.cn Rev. - 1.0 Figure 9 Typical Capacitance vs Drain to Source Voltage www.cloudchild.cn Figure 10 Typical Gate Charge vs Gate to Source Voltage Rev. - 1.0 TO-252 Package Outline Dimensions NOTICE CLOUDCHILD reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. CLOUDCHILD does not assume any liability arising out of the application or use of any product described herein. www.cloudchild.cn Rev. - 1.0