SS015N06LS

SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ Description SS015N06LS, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. Schematic Diagram KEY CHARACTERISTICS Parameter Value Unit VDSS 60 V ID 340 A R DS(on).typ 1.3 mΩ FEATURES: Fast Switching Low On-Resistance ( RDS(on)≤1.5mΩ ) Low Gate Charge Low Reverse transfer capacitances High avalanche ruggedness RoHS product APPLICATIONS: Switching applications Motor drivers BMS Synchronous rectification ORDERING INFORMATION Ordering Codes Package Product Code SS015N06LS TOLL-8 SS015N06LS WWW.SKYSEMI.COM 第1/10 Packing Reel 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ 2. ABSOLUTE RATINGS at TC=25°C，unless otherwise specified Symbol Parameter Drain-Source Voltage V DSS ID IDM Note1 V GS E AS Note2 PD T J ，T stg TL Rating Units 60 V Continuous Drain Current, Silicon Limited 370 A Continuous Drain Current, Package Limited 340 A Continuous Drain Current @T C =100°C, Silicon Limited 265 A Pulsed Drain Current 1200 A Gate-Source Voltage ±20 V Avalanche Energy 1450 mJ Power Dissipation 410 W Derating Factor above 25°C 2.85 W/ ℃ 175 ，–55 to 175 ℃ 260 ℃ Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Note1： Repetitive Rating： Pulse width limited by maximum junction temperature Note2： L=0.5mH, Ias=77A Start TJ =25℃ 3． Thermal characteristics Symbol Parameter Max R θJC R θJA thermal resistance, Junction-Case 0.37 ℃/W 40 ℃/W 4. thermal resistance, Junction-Ambient Units Electrical Characteristics at TC=25°C, unless otherwise specified OFF Characteristics Symbol V DSS Parameter Drain-Source Voltage Breakdown Values Test Conditions Min Typ Max Units V GS =0V, I=250µA 60 -- -- V V DS =60V, V G S =0V -- -- 1 µA V DS =50, V G S =0V @T C =125°C -- -- 100 µA IDSS Drain-Source Leakage Current IGSS(F) Gate-Source Forward Leakage V GS =+20V -- -- 100 nA IGSS(R) Gate-Source Reverse Leakage V GS =-20V -- -- -100 nA WWW.SKYSEMI.COM 第2/10 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ ON Characteristics Symbol Parameter Values Test Conditions Drain-Source On-Resistance R DS(on) Gate Threshold Voltage V GS(th) Pulse width tp ≤300µs, δ≤2% Min V GS =10V, I D =50A V DS =V G S , I D =250µA Dynamic Characteristics Typ Max -- 1.3 1.5 mΩ 2.0 3.0 4.0 V Values Typ Symbol Parameter Test Conditions Ciss Coss Crss Qg Qgs Qgd Input Capacitance VDS=30V, 7373 Output Capacitance VGS=0, 4297 Reverse Transfer Capacitance f=1MHz 139 Total Gate Charge VDD=30V, 165 Gate-Source charge ID=50A, 42 Gate-Drain charge VGS=10V 51 Min Units Max Units pF nC Switching Characteristics Symbol Parameter Symbol td(on) tr td(off) tf Parameter Turn-On Delay Values Test Conditions Time Rise Time Test Conditions VDD=30V, ID=50A, VGS=10V, RG=3Ω, Resistive Load Turn-Off Delay Time Fall Time Min Typ Max -- 32 -- -- 96 -- -- 78 -- -- 102 -- Units Units ns Source-Drain Diode Characteristics Symbol Parameter Test Conditions ISymbol S I SM V SD T rr Q rr Parameter Continuous Source Current Conditions TTest C=25°C (Package limit) Maximum Pulsed Current Values Units Typ Max -- -- 340 Units A TC=25°C,tplimited by Tjmax -- -- 1200 A Diode Forward Voltage V GS =0V, I S =50A -- -- 1.4 V Reverse Recovery Time If=50A,VGS=0, -- 103 -- ns Reverse Recovery Charge di/dt=100A/us -- 298 -- nC WWW.SKYSEMI.COM 第3/10 Min 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ 5. Characteristics Curves Figure 2. Maximum Power Dissipation vs Case Figure 1. Safe Operating Area Temperature Figure 3. Maximum Continuous Drain Current vs Case Temperature WWW.SKYSEMI.COM 第4/10 Figure 4. Typical Output Characteristics 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ Figure 5. Transient Thermal Impedance Figure 6. Typical Transfer Characteristics WWW.SKYSEMI.COM 第5/10 Figure 7. Source-Drain Diode Forward Characteristics 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ Figure 8. Drain-Source On-Resistance vs Figure 9. Normalized On-Resistance vs Drain Current Junction Temperature Figure 10. Normalized Threshold Voltage vs Figure 11. Normalized Breakdown Voltage vs Junction Temperature Junction Temperature WWW.SKYSEMI.COM 第6/10 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ Figure 13. Typical Gate Charge vs Figure 12. Capacitance Characteristics WWW.SKYSEMI.COM Gate-Source Voltage 第7/10 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ 6. Test Circuit and Waveform WWW.SKYSEMI.COM 第8/10 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ WWW.SKYSEMI.COM 第9/10 深圳市思开半导体有限公司 SS015N06LS N-MOSFET 60V, 340A, 1.3mΩ 7. Package Description TOLL-8 WWW.SKYSEMI.COM 第10/10 深圳市思开半导体有限公司