HGB019NE6A

HGB019NE6A HGK019NE6A , P-1 HGP019NE6A 65V N-Ch Power MOSFET Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free 65 VDS TO-263 RDS(on),typ TO-247 RDS(on),typ TO-220 RDS(on),typ ID (Sillicon Limited) ID (Package Limited) Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial TO-220 V 1.35 mW 1.55 mW 1.65 mW 363 A 180 A TO-263 Drain Pin2 Gate Pin 1 Part Number Package HGB019NE6A TO-263 GB019NE6A HGK019NE6A TO-247 GK019NE6A HGP019NE6A TO-220 GP019NE6A Src Pin3 TO-247 Marking Absolute Maximum Ratings at T j=25℃ (unless otherwise specified) Parameter Continuous Drain Current (Silicon Limited) Symbol ID Continuous Drain Current (Package Limited) Conditions Value TC=25℃ 363 TC=100℃ 257 TC=25℃ 180 Unit A Drain to Source Voltage VDS - 65 V Gate to Source Voltage VGS - ±20 V Pulsed Drain Current IDM - 900 A Avalanche Energy, Single Pulse EAS L=0.1mH, TC=25℃ 180 mJ Power Dissipation PD TC=25℃ 333 W -55 to175 ℃ Symbol Max Unit Thermal Resistance Junction-Ambient RqJA 60 ℃/W Thermal Resistance Junction-Case RqJC 0.45 ℃/W Operating and Storage Temperature TJ, Tstg - Absolute Maximum Ratings Parameter Ver 1.0 Aug. 2021 HGB019NE6A HGK019NE6A , P-2 HGP019NE6A Electrical Characteristics at Tj=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Conditions Value min typ max Unit Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250mA 65 - - Gate Threshold Voltage VGS(th) VGS=VDS, ID=250mA 2.0 2.5 4.0 Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=60V, Tj=25℃ - - 1 VGS=0V, VDS=60V, Tj=100℃ - - 100 Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain to Source on Resistance RDS(on) VGS=10V, ID=20A TO-263 - 1.35 1.6 mW Drain to Source on Resistance RDS(on) VGS=10V, ID=20A TO-247 - 1.55 1.8 mW Drain to Source on Resistance RDS(on) VGS=10V, ID=20A TO-220 - 1.65 1.9 mW Transconductance gfs VDS=5V, ID=20A - 80 - S Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 0.63 - W - 8671 - - 3042 - V mA Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 161 - Total Gate Charge Qg(10V) - 130 - Gate to Source Charge Qgs - 24 - Gate to Drain (Miller) Charge Qgd - 34 - Turn on Delay Time td(on) - 30 - Rise time tr - 28 - Turn off Delay Time td(off) - 70 - Fall Time tf - 32 - - 0.9 1.2 V - 72 - ns - 100 - nC VGS=0V, VDS=30V, f=1MHz VDD=30V, ID=20A, VGS=10V VDD=30V, ID=20A, VGS=10V, RG=10W, pF nC ns Reverse Diode Characteristics Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Ver 1.0 VGS=0V, IF=20A VR=30V, IF=20A, dIF/dt=100A/ms Aug. 2021 HGB019NE6A HGK019NE6A , Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 6V 120 P-3 HGP019NE6A 5.5 10V ID=20A 4.5V 100 4.5 80 RDS(ON) (mW) ID (A) 3.5 60 4V 125°C 2.5 40 25°C 1.5 20 Vgs=3.5V 0.5 0 0 0.2 0.4 0.6 0.8 2 1 4 6 8 10 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 3 1.6 ID=20A 1.5 Normalized On-Resistance 2.5 VGS=6V RDS(ON) (mW) 2 1.5 VGS=10V 1 VGS=10V 1.4 1.3 VGS=6V 1.2 1.1 1 0.5 0.9 0 0 5 10 15 0.8 20 0 25 50 ID (A) 75 100 125 150 175 Temperature (°C) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage 20 1.E+02 VDS=5V 1.E+01 15 125°C 125℃ 25℃ 25°C 1.E+00 ID(A) IS (A) 10 1.E-01 5 1.E-02 0 1.E-03 1 2 3 4 VGS(V) Ver 1.0 5 6 0.2 0.4 0.6 0.8 1.0 VSD (V) Aug. 2021 HGB019NE6A HGK019NE6A , Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage P-4 HGP019NE6A Figure 8. Typical Capacitance vs. Drain-to-Source Voltage 100000 10 VDS=30V ID=20A Capacitance (pF) 6 VGS (V) Ciss 10000 8 4 2 1000 Coss 100 Crss 10 0 1 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 VDS (V) Qg (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature 1000.0 400 10ms Silicon Limited 350 RDS(ON) limited 100.0 100ms Current rating ID(A) 300 1ms ID (Amps) 10.0 10ms DC 10s 1.0 TJ(Max)=175°C TC=25°C 0.1 250 Package Limited 200 150 100 50 0 0.0 0.01 0.1 1 10 100 0 1000 25 VDS (V) 50 75 100 125 150 175 TAmbient(℃) Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient 10 Duty=Ton/T Peak TJ=TC+PDM.ZqJC.RqJC RqJC=0.45℃/W 1 Duty=0.5 ZqJA Normalized Transient Thermal Resistance 0.3 0.1 0.05 0.1 0.01 0.03 0.01 single pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Ver 1.0 Aug. 2021 HGB019NE6A HGK019NE6A , HGP019NE6A P-5 Inductive switching Test Gate Charge Test Uclamped Inductive Switching (UIS) Test Diode Recovery Test Ver 1.0 Aug. 2021 HGB019NE6A HGK019NE6A , HGP019NE6A P-6 Package Outline TO-220, 3 leads Ver 1.0 Aug. 2021 HGB019NE6A HGK019NE6A , HGP019NE6A P-7 Package Outline Ver 1.0 Aug. 2021 HGB019NE6A HGK019NE6A , HGP019NE6A P-8 Package Outline TO-263, 3 leads Ver 1.0 Aug. 2021