OSG80R300FF

OSG80R300FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent stability and uniformity Applications  PC power  LED lighting  Telecom power  Server power  EV Charger  Solar/UPS Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 850 V ID, pulse 45 A RDS(ON) , max @ VGS=10V 300 mΩ Qg 23.3 nC Product Name Package Marking OSG80R300FF TO220F OSG80R300F Marking Information Package & Pin Information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage VDS 800 V Gate-source voltage VGS ±30 V Continuous drain current1), TC=25 °C 15 ID A Continuous drain current1), TC=100 °C 9.5 Pulsed drain current2), TC=25 °C ID, pulse 45 A IS 15 A IS, pulse 45 A Power dissipation3), TC=25 °C PD 34 W Single pulsed avalanche energy5) EAS 410 mJ MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns Tstg, Tj -55 to 150 °C Symbol Value Unit Thermal resistance, junction-case RθJC 3.68 °C/W Thermal resistance, junction-ambient4) RθJA 62.5 °C/W Continuous diode forward current1), TC=25 °C Diode pulsed current2), TC=25 °C Operation and storage temperature Thermal Characteristics Parameter Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Symbol Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Drain-source onstate resistance RDS(ON) Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG Min. Typ. Max. Unit VGS=0 V, ID=250 μA 800 V VGS=0 V, ID=250 μA, Tj=150 °C V VDS=VGS, ID=250 μA 850 2.9 3.9 0.24 0.3 VGS=10 V, ID=7.5 A Ω 0.64 100 VGS=10 V, ID=7.5 A, Tj=150 °C VGS=30 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 Test condition 5 18.2 VGS=-30 V μA VDS=800 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 1552 pF Output capacitance Coss 80.1 pF Reverse transfer capacitance Crss 2.1 pF Turn-on delay time td(on) 33.6 ns tr 20.3 ns td(off) 57.9 ns tf 4.5 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=10 V, VDS=400 V, RG=2 Ω, ID=7.5 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 22.7 nC Gate-source charge Qgs 8.6 nC Gate-drain charge Qgd 2.3 nC Vplateau 5.5 V Gate plateau voltage Test condition VGS=10 V, VDS=400 V, ID=7.5 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 313.7 ns Reverse recovery charge Qrr 4.2 μC Peak reverse recovery current Irrm 25.2 A Test condition IS=15 A, VGS=0 V VR=400 V, IS=7.5 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=100 V, VGS=10 V, L=79.9 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 4.5 5 12 10 V 6 10 6V Tj = 25 ℃ 10 5.5 V ID, Drain current(A) ID, Drain current (A) 1005.5 8 6 4 Tj = 25 ℃ 10 1 5V 2 0 VDS= 10 V VGS= 4.5 V 0 2 4 6 8 0.1 10 2 4 VDS, Drain-source voltage (V) Figure 1. Typ. output characteristics 8 10 Figure 2. Typ. transfer characteristics 5 10 10 ID = 7.5 A f = 100 kHz 10 VGS, Gate-source voltage(V) VGS = 0 V 4 C, Capacitance (pF) 6 VGS, Gate-source voltage(V) Ciss 3 10 2 10 Coss 1 10 VDS = 400 V 8 6 4 2 Crss 0 10 100 200 300 400 500 600 700 0 800 0 5 Figure 3. Typ. capacitances 20 25 0.70 ID = 250 uA VGS = 0 V 0.60 RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) 15 Figure 4. Typ. gate charge 1100 1050 10 Qg, Gate charge(nC) VDS, Drain-source voltage (V) 1000 950 900 850 ID =7.5 A VGS = 10 V 0.50 0.40 0.30 0.20 800 0.10 750 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 -50 0 50 100 150 Tj, Junction Temperature (℃) Figure 6. Drain-source on-state resistance Page.4 OSG80R300FF Enhancement Mode N-Channel Power MOSFET 4.5 1000 Tj = 25 ℃ ID = 250 uA IS, Source current (A) Vth, Threshold voltage (V) 4.0 3.5 3.0 100 10 2.5 1 2.0 -50 0 50 100 150 0.5 1.0 1.5 2.0 VSD, Source-Drain voltage (V) Tj, Junction Temperature (℃) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 1.0 16 0.8 12 6V VGS=4.5 V 10 V 6.5 V 0.6 ID, Drain current (A) RDS(ON), On-resistance(Ω) 14 10 8 6 0.4 4 2 0.2 5 10 15 20 25 30 0 35 0 20 40 Figure 9. Drain-source on-state resistance 100 10 μs 100 μs 1 1 ms RDS(ON) Limited 10 ms 0.1 DC 0.01 10 100 1000 VDS, Drain-source voltage(V) Figure 11. Safe operation area TC=25 °C Oriental Semiconductor © Copyright Reserved V2.0 zthjc Thermal Response(K/W) ID, Drain current(A) 10 1 80 100 120 140 Figure 10. Drain current 101 0.1 60 TC, Case Temperature (℃) ID, Drain current(A) D= tp/T D= 1 0.5 100 0.2 0.1 0.05 10-1 0.01 0.02 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 102 tp Pulse width(s) Figure 12. Max. transient thermal impedance Page.5 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.6 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Package Information Symbol E A A1 A4 c D H1 e L L1 ΦP ΦP3 F3 G3 b1 b2 Min 9.96 4.50 2.34 2.56 0.40 15.57 12.68 2.88 3.03 3.15 3.15 1.25 1.18 0.70 mm Nom 10.16 4.70 2.54 2.76 0.50 15.87 6.70REF 2.54BSC 12.98 3.03 3.18 3.45 3.30 1.35 1.28 0.80 Max 10.36 4.90 2.74 2.96 0.65 16.17 13.28 3.18 3.38 3.65 3.45 1.55 1.43 0.95 Version 1: TO220F-C package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.7 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Package Information Symbol A A1 A2 b b1 c D D1 D2 E E1 e e1 H1 L L1 L2 ΦP Q θ1 Min 4.40 1.27 2.30 0.70 1.27 0.45 15.30 9.10 13.10 9.70 7.80 6.30 12.78 3.55 2.73 1˚ mm Nom 4.50 1.30 2.40 0.50 15.70 9.20 9.90 8.00 2.54BSC 5.08BSC 6.50 13.08 4.60REF 3.60 3˚ Max 4.60 1.33 2.50 0.90 1.40 0.60 16.10 9.30 13.70 10.20 8.20 6.70 13.38 3.50 3.65 2.87 5˚ Version 2: TO220F-J package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.8 OSG80R300FF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TO220F-C 50 20 1000 6 6000 TO220F-J 50 20 1000 5 5000 Product Information Product Package Pb Free RoHS Halogen Free OSG80R300FF TO220F yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.9