山东晶导微电子有限公司
1N5817W THRU 1N5819W
Jingdao Microelectronics
SCHOTTKY BARRIER RECTIFIERS
FEATURES
PINNING
• Metal silicon junction, majority carrier conduction
PIN
DESCRIPTION
• Guarding for overvoltage protection
1
Cathode
• Low power loss, high efficiency
2
Anode
1
2
• High current capability
• low forward voltage drop
• High surge capability
Top View
Marking Code: 1N5817W---12A
1N5818W---13A
1N5819W---14A
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Symbols
1N5817W
1N5818W
1N5819W
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
20
30
40
V
Maximum RMS voltage
V RMS
14
21
28
V
Maximum DC Blocking Voltage
V DC
20
30
40
V
Maximum Average Forward Rectified Current
I F(AV)
1
A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method)
I FSM
25
A
at 1 A
at 3 A
VF
Parameter
Maximum Instantaneous Forward Voltage
0.45
0.75
0.55
0.875
0.6
0.9
V
Maximum Instantaneous Reverse Current at TA = 25°C
Rated DC Reverse Voltage
TA = 100°C
IR
1
10
mA
Typical Junction Capacitance
Cj
110
pF
T j , T stg
-55 ~ +150
°C
Storage and Operating Junction Temperature Range
2016.01
SOD123FL-S-1N5817W~1N5819-1A40V
Page 1 of 3
山东晶导微电子有限公司
1N5817W THRU 1N5819W
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
75
50
100
125
150
Instaneous Reverse Current ( μA)
Fig.1 Forward Current Derating Curve
10 4
10 3
T J =125°C
10 2
T J =75°C
10 1
T J =25°C
10 0
0
Case Temperature (°C)
Fig.3 Typical Forward Characteristic
60
80
100
Fig.4 Typical Junction Capacitance
500
5°
C
=2
TJ
12
5°C
0.5
Junction Capacitance ( pF)
1.0
TJ =
Instaneous Forward Current (A)
40
20
Percent of Rated Peak Reverse Voltage(%)
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
200
100
50
20
10
0.7
0.1
1
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
30
8.3 ms Single Half Sine Wave
(JEDEC Method)
25
20
15
10
05
00
1
10
100
Number of Cycles at 50Hz
2016.01
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
1N5817W THRU 1N5819W
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123FL
∠ALL ROUND
C
A
∠ALL ROUND
VM
D
E
A
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.1
0.20
2.9
1.9
1.1
0.9
3.8
min
0.9
0.12
2.6
1.7
0.8
0.7
3.5
max
43
7.9
114
75
43
35
150
min
35
4.7
102
67
31
28
138
UNIT
mm
g
pad
e
E
A
pad
HE
∠
7°
The recommended mounting pad size
Marking
2.0
(79)
1.2
(47)
Type number
Marking code
1N5817W
12A
1N5818W
13A
1N5819W
14A
1.2
(47)
1.2
(47)
Unit: mm
(mil)
2016.01
XTH601152B8
Page 3 of 3
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