TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Features
Description
Industry-Standard Pin-Out
The TPM27517 is a single-channel low-side gatedriver for MOSFET, IGBT and GaN power switches.
4.5-V to 23-V Single-Supply Range
High sourcing and sinking current capability of 5-A
allows improving switching efficiencies by minimizing
slew time and switching loss. The device supports
maximum 25-V supply voltage and −5 V input voltage.
It improves system robustness especially in noisy
industrial applications. Ultra-low propagation delay
allows applications with tight timing requirements.
Single Channel 5-A Peak Source and Sink-Drive
Current
TTL and CMOS Compatible Threshold
Outputs Held Low During VDD-UVLO or Input
Floating
Low Propagation Delay (13-ns Typical)
Fast Rise and Fall Times (7-ns and 6-ns Typical)
A small SOT23-5 package assists design for high
density power supply.
ESD Protection Exceeds JESD 22 − 6-kV HBM,
1.5-kV CDM
Available in SOT23-5 Package
Applications
Switched-Mode Power Supplies
DC-DC Converters
Motor Control, Solar Inverters, UPS
Gate & IGBT Drive
Application Diagram
TPM27517
VDD
OUT
+
GND
IN+
IN-
IGBT /
MOSFET /
SiC FET
Controller
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Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Table of Contents
Features .............................................................................................................................................................. 1
Applications ....................................................................................................................................................... 1
Description ......................................................................................................................................................... 1
Application Diagram .......................................................................................................................................... 1
Revision History ................................................................................................................................................ 3
Pin Configuration and Functions ..................................................................................................................... 4
Pin Functions ................................................................................................................................................ 4
Specifications .................................................................................................................................................... 5
Absolute Maximum Ratings .......................................................................................................................... 5
ESD, Electrostatic Discharge Protection ...................................................................................................... 5
Recommended Operating Conditions .......................................................................................................... 5
Thermal Information ..................................................................................................................................... 5
Electrical Characteristics .............................................................................................................................. 6
Typical Performance Characteristics ............................................................................................................ 7
Detailed Description ........................................................................................................................................ 10
Overview..................................................................................................................................................... 10
Functional Block Diagram .......................................................................................................................... 10
Feature Description ..................................................................................................................................... 11
Package Outline Dimensions ......................................................................................................................... 12
SOT23-5 ..................................................................................................................................................... 12
Order Information ............................................................................................................................................ 13
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Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Revision History
Date
Revision
2021-09-08
Rev.A.0
www.3peakic.com.cn
Notes
First release version
3 / 13
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Pin Configuration and Functions
SOT23-5
Top View
VDD
1
GND
2
IN+
3
5
OUT
4
IN
Pin Functions
Pin
I/O
Description
No.
Name
2
GND
Ground
3
IN+
Input
Logic Non-inverting Input.
4
IN−
Input
Logic Inverting Input.
5
OUT
Output
Channel Output
1
VDD
Power
Power Supply Input
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Device Ground
4 / 13
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Specifications
Absolute Maximum Ratings
Parameter
VDD
OUT
IN+, IN−
Min
Max
Unit
Power Supply Voltage
−0.3
25
V
Output Voltage Range
−0.3
VDD + 0.3
V
Output Voltage Range (200-ns pulse)
−2
VDD + 0.3
V
Input Voltage Range
−5
20
V
−300
300
mA
Pulsed Output Channel Current OUT (500 ns)
−5
5
A
Operating Junction Temperature Range
−40
150
°C
Storage Temperature Range
−65
150
°C
260
°C
Continuous Output Channel Current OUT
TJ
TSTG
TL
Lead Temperature (Soldering 10 sec)
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure
to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
(2) The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 300 mV beyond
the power supply, the input current should be limited to less than 10 mA.
(3) Power dissipation and thermal limits must be observed.
ESD, Electrostatic Discharge Protection
Symbol
Parameter
HBM
CDM
Condition
Human Body Model ESD
Charged Device Model ESD
Minimum Level
Unit
ANSI/ESDA/JEDEC
JS-001(1)
±6
kV
ANSI/ESDA/JEDEC
JS-002(2)
±1.5
kV
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Recommended Operating Conditions
Parameter
Min
Power Supply Voltage, VDD
Input Voltage Range IN+, IN−
Operating Ambient Temperature Range
Typ
Max
Unit
4.5
23
V
0
20
V
−40
125
°C
Thermal Information
Package Type
θJA
θJC
Unit
SOT23-5
89.1
52.0
°C/W
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Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Electrical Characteristics
All test condition is VDD = 12 V, TJ = −40°C − 150°C, 1-μF capacitor between VDD and GND, unless otherwise
noted.
Symbol
IDD(off)
Parameter
Start-up current,
Conditions
Min
Typ
Max
VDD = 3.4 V, IN+ = H, IN− = L
40
100
VDD = 3.4 V, IN+ = L, IN− = H
40
100
Unit
μA
TJ = 25 °C
3.91
4.2
4.5
TJ = −40 °C − 150 °C
3.7
4.2
4.65
TJ = −40 °C − 150 °C
3.4
3.9
4.4
V
0.2
0.3
0.5
V
1.9
2.3
V
VON
Supply Under Voltage Lock Out
rising threshold
VOFF
Supply Under Voltage Lock Out
falling threshold
VDD_H
Supply Under Voltage Lock Out
hysteresis
VIN−_H
IN− high threshold
IN− high threshold
VIN−_L
IN− low threshold
IN− low threshold
VIN−_HYS
IN− hysteresis
VIN+_H
IN+ signal high threshold
IN+ high threshold
VIN+_L
IN+ signal low threshold
IN+ low threshold
VIN+_HYS
IN+ hysteresis
IOUT
Output peak current
CLOAD = 0.22 μF, FSW = 1 kHz
VDD − VOH
Output high voltage
IOUT = −10 mA
40
mV
VOL
Output low voltage
IOUT = 10 mA
10
mV
ROH
Output pull-up Resistance,
PMOS pull-up only
IOUT = −10 mA
1
1.6
3
Ω
ROL
Output pull-down Resistance
IOUT = 10 mA
0.15
0.5
1
Ω
tR
Output rise-time
CLOAD = 1.8 nF
7
18
ns
tF
Output fall-time
CLOAD = 1.8 nF
6
10
ns
tPW
Minimal pulse width
15
25
ns
tD1
IN+ to output propagation delay
CLOAD = 1.8 nF, 5-V IN+ pulse
6
13
23
ns
tD2
IN+ to output propagation delay
CLOAD = 1.8 nF, 5-V IN+ pulse
6
13
23
ns
tD3
IN− to output propagation delay
CLOAD = 1.8 nF, 5-V IN− pulse
6
13
23
ns
tD4
IN− to output propagation delay
CLOAD = 1.8 nF, 5-V IN− pulse
6
13
23
ns
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V
1
1.2
0.7
0.9
1.1
V
2.1
2.3
V
1
1.2
0.7
0.9
V
V
1.1
±5
V
A
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
High
High
IN+
IN+
Low
Low
High
High
IN-
INLow
Low
90%
90%
Output
Output
10%
10%
tD1
tD 3
tD2
Figure 1 IN+ Timing Diagram
tD 4
Figure 2 IN− Timing Diagram
Typical Performance Characteristics
0.1
5
Operating Supply Current (mA)
IN+ = VDD
IN- = GND
Startup Current (mA)
0.075
0.05
0.025
0
-50
0
50
100
4
3
f = 500 kHz
CL = 500 pF
VDD = 12 V
2
-50
150
0
50
Figure 3 Start-up Current vs. Temperature
5
UVLO Rising
UVLO Falling
VDD = 12 V
IN+ = VDD
IN+ = GND
4.5
UVLO Threshold (V)
0.45
Supply Current (mA)
150
Figure 4 Operating Current vs Ambient Temperature
0.6
0.3
0.15
0
-50
100
Temperature (°C)
Temperature (°C)
4
3.5
0
50
100
150
Temperature (°C)
0
50
100
150
Temperature (°C)
Figure 5. Supply Current vs Temperature (On/Off)
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3
-50
7 / 13
Figure 6 UVLO Threshold vs Temperature
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Typical Performance Characteristics (Continued)
60
2.8
Input Threshold (V)
2.4
Operating Supply Current (mA)
IN+ High Threshold
IN- High Threshold
IN+ Low Threshold
IN- Low Threshold
2
1.6
1.2
0.8
0.4
-50
0
50
100
VDD = 4.5V
VDD = 12V
VDD = 15V
50
40
30
20
10
0
100
150
200
300
400
Figure 7 Input Threshold vs Temperature
700
800
900
1000
1
Output Pull-down Resistance ()
Output Pullup Resistance ()
600
Figure 8 Operating Supply Current vs Frequency
4
3
2
1
0
-50
0
50
100
0.8
0.6
0.4
0.2
-50
150
0
Figure 9 Output Pull-up Resistance vs Temperature
100
150
Figure 10. Output Pull-down Resistance vs
Temperature
9
9
8
Fall Time (ns)
10.5
7.5
6
4.5
-50
50
Temperature (°C)
Temperature (°C)
Rise Time (ns)
500
Frequency (kHz)
Temperature (°C)
7
6
0
50
100
150
Temperature (°C)
0
50
100
150
Temperature (°C)
Figure 11 Rise-time vs Temperature
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5
-50
Figure 12. Fall-time vs Temperature
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Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Typical Performance Characteristics (Continued)
20
Turn-on
Turn-off
16
Rise Time (ns)
Input to Output Propagation Delay (ns)
18
14
12
15
10
10
8
-50
5
0
50
100
150
Temperature (°C)
4
8
12
16
20
Supply Voltage (V)
Figure 14 Rise-time vs Supply Voltage
Figure 13 Input to Output Propagation Delay vs
Temperature
2.5
Enable Threshold (V)
2
VDD = 4.5 V
IN+ High Threshold
IN- High Threshold
IN+ Low Threshold
IN- Low Threshold
1.5
1
0.5
-50
0
50
100
150
Temperature (°C)
Figure 15 Enable Threshold vs Temperature
Figure 16 IN+ Rising Edge
Figure 17 IN+ Falling Edge
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9 / 13
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Detailed Description
Overview
The TPM27517 single-channel low-side gate driver is designed for high performance power supplies, motor
controls and inverters. Designed with the industrial standard of pin-out and package, the TPM27517 accelerates
design process. With extended voltage ranges on supply voltage and negative input voltage, the TPM27517
improves system level reliability. Its 5-A strong driving capability improves gate driver efficiency and lowers heat
generation, especially in high-frequency switching applications.
Functional Block Diagram
VDD
VDD
IN
VDD
VDD
IN+
OUT
GND
VDD
GND
UVLO
GND
GND
Figure 18 Functional Block Diagram
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10 / 13
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Feature Description
Low Propagation Delay Driver Output
The low-propagation-delay design between the device input and output allows the device to achieve the
industrial leading performance. The low delay enhances the driver performance in high frequency switching
regulators.
Supply and UVLO
The device monitors supply voltage with under-voltage lock-out (UVLO). When the supply voltage is below the
UVLO threshold, the output is held low in UVLO to avoid glitches during power rising and falling. The device
quiescent current and operating current are measured as shown in Figure 5. The current is related to internal
quiescent current consumption as well as output current. The output current can be calculated using external
transistor gate charge times switching frequency fsw.
Channel Input
The input of the TPM27517 gate driver supports TTL and CMOS input with threshold voltage independent of
supply voltage. The threshold is also designed as temperature independent to support a wide range of ambient
temperature. Wide hysteresis enhances system level noise immunity. The integrated pull-down resistor sets the
device in low state when the inputs are floating. The inputs can withstand DC −5 V to improve robustness on
ground bouncing.
Output Stage
The TPM27517 output stage can deliver high current sourcing and sinking up to 5-A with low propagation delay.
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11 / 13
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed Low-Side Gate Driver
Package Outline Dimensions
SOT23-5
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12 / 13
Rev.A.0
TPM27517
Single-Channel 5-A High-Speed, Low-Side Gate Driver
Order Information
Order Number
Operating Temperature
Range
Package
Marking
Information
MSL
Transport Media,
Quantity
Eco Plan
TPM27517-S5TR
−40°C – 125°C (1)
SOT23-5
M57
MSL3
3000
Green
(1) Ambient temperature indicates device operation condition range. Application thermal behavior needs to be taken care of when operating in high temperature scenarios.
Green: 3PEAK defines "Green" to mean RoHS compatible and free of halogen substances.
3PEAK and the 3PEAK logo are registered trademarks of 3PEAK INCORPORATED. All other trademarks are the
property of their respective owners.
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Rev.A.0
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