AGM065N10C

AG GM065N10C ● General Description Product Summary The AGM065N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance BVDSS RDSON ID 100V 6.2mΩ 100A TO-220 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGM065N10C AGM065N10C TO-220 Reel Size Tape width Quantity ---- 1000 ---- Absolute Maximum Ratings (TA=25℃) Table 1. Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 100 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 100 A Drain Current-Continuous(Tc=100℃) 63 A Drain Current-Continuous@ Current-Pulsed (Note 2) 260 A Maximum Power Dissipation(Tc=25℃) 128 w Maximum Power Dissipation(Tc=100℃) 51 w 132 mJ -55 To 150 ℃ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Typ Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 66 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.97 ℃/W www.agm-mos.com 1 VER2.5 AG GM065N10C Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V gFS Forward Transconductance VDS=5V,ID=10A -- -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=15A -- 6.2 7.6 mΩ VGS=4.5V, ID=8.0A -- 8.0 10.4 mΩ -- 1990 -- pF -- 370 -- pF -- 10 -- pF -- 1.2 -- Ω -- 14.5 -- nS -- 21.5 -- nS -- 54 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=50V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 84 -- nS Qg Total Gate Charge -- 39.5 -- nC Qgs Gate-Source Charge -- 4.4 -- nC Qgd Gate-Drain Charge -- 12.3 -- nC -- -- 100 A VGS=10V,VDS=50V, ID=1A,RGEN=6Ω VGS=10V, VDS=50V, ID=8.5A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=1A -- 0.7 1.2 V trr Reverse Recovery Time IF=1A ,VDD=50V -- -- -- ns Qrr Reverse Recovery Charge dI/dt=100A/µs , TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 ID , Continuous Drain Current (A) Normalized On Resistance (m) AG GM065N10C Fig.2 Qg , Gate Charge (nC) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Gate Charge Characteristics ID , Drain Current (A) Normalized Thermal Response (RθJC) Fig.4 VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Fig.5 Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 TJ , Junction Temperature (℃) TC , Case Temperature (℃) Continuous Drain Current vs. TC Fig.6 Normalized Transient Impedance www.agm-mos.com 3 Maximum Safe Operation Area VER2.5 AG GM065N10C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.8 Gate Charge Waveform Fig.7 Switching Time Waveform www.agm-mos.com 4 VER2.5 AG GM065N10C TO220 PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.300 9.700 0.406 0.382 A1 8.840 8.440 0.348 0.332 A2 1.250 1.050 0.049 0.041 A3 5.300 5.100 0.209 0.201 B 16.200 15.400 0.638 0.606 C 4.680 4.280 0.184 0.169 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 3.800 3.400 0.150 0.134 G 9.300 8.700 0.366 0.343 H 0.600 0.400 0.024 0.016 K 2.700 2.100 0.106 0.083 L 13.600 12.800 0.535 0.504 M 1.500 1.100 0.059 0.043 N 2.590 2.490 0.102 0.098 T DIA www.agm-mos.com W0.35 Φ1.5 TYP. W0.014 deep0.2 TYP. 5 Φ0.059 TYP. deep0.008 TYP. VER2.5 AG GM065N10C Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on June10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5