3080K

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET Description Features Application  30V,80A  RDS(ON)=3.8mΩ (Typ.) @ VGS =10V  RDS(ON)=6.5mΩ (Typ.) @ VGS =4.5V  Advanced Trench Technology  Load Switch  PWM Application  Provide Excellent RDS(ON) and Low Gate Charge Package Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 80 A TC = 100℃ 62 A 300 A 210 mJ 81 W 1.87 ℃/W ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range www.superchip.cn 第1页共7页 -55 to +175 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 30 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source on-Resistance VGS =10V, ID =30A - 3.8 6.5 note3 VGS =4.5V, ID =20A - 6.5 10 Forward Transconductance VDS =5V, ID =15A - 26 - S - 2153 - pF - 327 - pF - 287 - pF - 45 - nC - 3 - nC - 15 - nC - 21 - ns - 32 - ns - 59 - ns - 34 - ns On Characteristics VGS(th) RDS(on) gFS mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =15V, VGS =0V, f = 1.0MHz VDS =25V, ID =30A, VGS =10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=15V, ID=30A, RGEN=3Ω, VGS =10V Turn-off Fall Time Drain-Source Diode Characteristics and MaximumRatings IS Maximum Continuous Drain to Source Diode Forward Current - - 80 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 300 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 15 - ns - 4 - nC VGS = 0V, IS=30A trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω，L=0.5mH 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.superchip.cn 第2页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 100 ID (A) ID (A) 100 80 80 60 60 40 40 20 20 0 0 1.0 2.0 3.0 4.0 5.0 0 125℃ VGS(V) 0 1 2 3 4 5 6 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current RDS(ON) (mΩ) 6 25℃ IS(A) VGS =4.5V 5 4 100 VGS=10V 3 10 2 1 0 0 10 20 ID(A) 30 40 50 60 1 0.2 Figure 5: Gate Charge Characteristics 10 8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=25V ID=30A 10000 Ciss 6 1000 Coss Crss 4 100 2 0 Qg(nC) 0 8 www.superchip.cn 16 24 32 40 48 10 0 第3页共7页 VDS(V) 5 10 15 20 25 30 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature V BR(DSS) (V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature R DS (on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area ID (A) 1000 0.5 -100 0 50 100 150 200 ID (A) 80 10μs 100 -50 Figure 10: Maximum Continuous Drain Currentvs. Case Temperature 100 Limited by R DS(on) Tj (℃) 100μs 60 1ms 10ms 10 40 100ms DC T A =25℃ Single pulse 1 20 V DS (V) 0.1 0.1 1 10 100 0 Tc (℃) 0 25 50 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-252) 101 Zth J-C (℃/W) 100 10-1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10 -3 10-6 10-5 www.superchip.cn 10-4 TP (s) 10-3 t1 t2 Notes: 1. 2. 10-2 Duty factor D=t1/t2 Peak T J =P DM *Z thJC +T C 10-1 100 第4页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.superchip.cn 第5页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) www.superchip.cn 第6页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K (文件编号：S&CIC1775) N-Channel Trench Power MOSFET TO-252 Package Information www.superchip.cn 第7页共7页 Version 1.0