MPSA94

MPSA94 PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 400 V Collector Emitter Voltage -VCEO 400 V Emitter Base Voltage -VEBO 6 V 300 mA 625 mW Collector Current -IC Power Dissipation Ptot Junction Temperature E T Tj Storage Temperature Range Characteristics at Ta = 25 OC Parameter Tstg H C 150 O C - 55 to + 150 O C Symbol Min. Max. Unit hFE hFE hFE 100 40 25 - - -ICBO - 0.1 µA -ICES - 1 µA -IEBO - 0.1 µA Collector Base Breakdown Voltage at -IC = 100 µA -V(BR)CBO 400 - V Collector Emitter Breakdown Voltage at -IC = 100 µA -V(BR)CES 400 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 400 - V -V(BR)EBO 6 - V -VCE(sat) -VCE(sat) - 0.5 0.75 V V -VBE(sat) - 0.75 V Cob - 7 pF M E DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 30 mA Collector Base Cutoff Current at -VCB = 300 V S Collector Emitter Cutoff Current at -VCE = 400 V Emitter Base Cutoff Current at -VEB = 4 V Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Base Enitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA Collector Output Capacitance at -VCB = 20 V, f = 1 MHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 03/06/2011 Rev:01 MPSA94 M E S 700 Power Dissipation: Ptot (mW) 600 500 E T H C Power Dissipation vs Ambient Temperature 400 300 200 100 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 03/06/2011 Rev:01