SI2302

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 4A 45m Ω RDS(ON), Vgs@ 2.5V, Ids@ 3.5A 59mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 G A B C D E Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 F 0.45 REF. S REF. 0.55 Millimeter G H K J L Min. 1.80 0.90 0.10 0.35 0.92 Max. 2.00 1.1 0.20 0.70 0.98 M 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25o 2) TA = 75oC Junction-to-Ambient Thermal Resistance (PCB mounted) 4 12 PD TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) ID IDM 2) RthJA 3) Unit V A 1.25 W 0.8 o -55 to 150 100 166 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. - 1- 2016-8-16 SI2302 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage BVDSS 1) VGS = 0V, ID = 250uA VGS = 4.5V, I D = 4A 30 45 VGS = 2.5V, I D = 3.5A 37 59 mΩ VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 16V, V Gate Body Leakage IGSS VGS = ± 10V, VDS = 0V gfs VDS = 5V, I D = 3A Forward Transconductance V RDS(on) VGS(th) 1) 20 GS 0.52 = 0V 1.2 V 1 uA ±100 nA 10 S Dynamic Total Gate Charge Qg 5.4 VDS = 10V, I D = 3A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time 1.6 12 VDD = 10V, RL=5.5 Ω tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss nC 0.65 VGS = 4.5V 36 ID ^ 3A,VGEN = 4.5V RG = 6 Ω ns 34 10 340 VDS = 10V, VGS = 0V Output Capacitance Coss pF 115 f = 1.0 MHz Reverse Transfer Capacitance 33 Crss Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS 1.6 A VSD 1.2 V IS = 1.0A, V GS = 0V Pulse test: pulse width