MDD2310

SI2310 SOT-23 Plastic-Encapsulate MOSFETS 30V N-Channel MOSFET V(BR)DSS SOT-23 105mΩ@10V 60V 3 ID Max RDS(on)Typ 1. GATE 3A 125mΩ@4.5V 2. SOURCE 1 3. DRAIN DESCRIPTION 2 The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  Battery Switch  DC/DC Converter MARKING Equivalent circuit D CA2T G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 ID 3 A IDM 10 A PD 0.35 TJ 150 o Tstg -55 to 150 o Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation 1) ,2) 0D[LPXP Junction 7HPSHUDWXUH 6WRUDJH7HPSHUDWXUH Thermal Resistance from Junction-to-Ambient (t≤5s) 357 RθJA Unit V W C C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T21705A0 http://www.microdiode.com Rev:2021A1 Page :1 SI2310 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 1 µA ±100 nA 2 V VGS =10V, ID = 3A 10 105 mΩ VGS =4.5V, ID = 3A 12 125 mΩ Forward tranconductance (note 3) gFS VDS =15V, ID =2A Diode forward voltage (note 3) VSD IS=3A, VGS = 0V 0.5 S 1.4 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss 247 pF Output Capacitance Coss 34 pF Reverse Transfer Capacitance Crss 19.5 pF 6 ns VGS=10V,VDD=30V, 15 ns ID=1.5A,RGEN=1Ω 15 ns tf 10 ns Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 1.3 nC VDS =30V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDS =30V,VGS =4.5V,ID =3A Notes : 1.. Repetitive rating : Pulse width limited by junction temperature. 2.. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. http://www.microdiode.com Rev:2021A1 Page :2 SI2310 Typical Characteristics Transfer Characteristics Output Characteristics 15 8 Pulsed VDS=5.0V Pulsed (A) DRAIN CURRENT DRAIN CURRENT VGS=2.5V 5 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS Ta=100℃ 4 2 VGS=2.0V 0 Ta=25℃ 6 ID 10 ID (A) VGS=5V、4V、3.0V 0 5 0 1 (V) 3 GATE TO SOURCE VOLTAGE ID 140 RDS(ON) 400 —— 4 VGS (V) VGS Ta=25℃ Ta=25℃ (mΩ) VGS=4.5V 300 RDS(ON) 100 ON-RESISTANCE RDS(ON) (mΩ) 120 ON-RESISTANCE Pulsed Pulsed 80 VGS=10V 60 200 ID=3A 100 40 20 0 0.5 2 4 6 DRAIN CURRENT 8 ID 10 0 IS —— VSD 10 2 4 6 8 GATE TO SOURCE VOLTAGE (A) VGS 10 (V) Threshold Voltage 1.2 Ta=25℃ Pulsed (V) VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 1.1 0.1 0.01 1.0 ID=250uA 0.9 0.8 0.7 0.6 1E-3 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTA VOLTAGE http://www.microdiode.com 1.0 SD (V) 1.2 0.5 25 50 75 JUNCTION TEMPERATURE Rev:2021A1 100 TJ 125 (℃ ) Page :3 SI2310 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2021A1 Page :4