HSS4P06

HSS4P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSS4P06 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS4P06 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -60 V RDS(ON),TYP 75 mΩ ID -4 A SOT23 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ ±20 V Continuous Drain Current, VGS @ -10V1 -4 A Continuous Drain Current, VGS @ -10V1 -3.5 A Current2 -16 A Dissipation3 1.4 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 1 Typ. Max. Unit --- 100 ℃/W --- 62 ℃/W 1 HSS4P06 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V VGS=-10V , ID=-4A --- 75 90 VGS=-4.5V , ID=-3A --- 90 110 VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 VDS=-60V , VGS=0V , TJ=55℃ --- --- 5 m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-30V , ID=-4A --- 11 --- S Qg Total Gate Charge --- 20 --- Qgs Gate-Source Charge --- 3.4 --- Qgd Gate-Drain Charge --- 3.62 --- Td(on) Turn-On Delay Time VDS=-30V , VGS=-10V , ID=-4A nC --- 7.4 --- Rise Time VDS=-30V , VGS=-10V , RG=1, --- 5.4 --- Turn-Off Delay Time ID=-3A --- 37.2 --- Fall Time --- 16 --- Ciss Input Capacitance --- 831 --- Coss Output Capacitance --- 89 --- Crss Reverse Transfer Capacitance --- 63 --- Min. Typ. Max. Unit --- --- -4 A --- --- -16 A --- --- -1.2 V Tr Td(off) Tf VDS=-30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS4P06 P-Ch 60V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSS4P06 P-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSS4P06 P-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSS4P06 Package code SOT-23L Packaging 3000/Tape&Reel c www.hs-semi.cn Ver 2.0 5