HYG050N10NS1P

HYG050N10NS1P N-Channel Enhancement Mode MOSFET Feature  Pin Description 100V/135A RDS(ON)=4.4mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L Applications  Power Switching application  Motor Control N-Channel MOSFET Ordering and Marking Information Package Code P P :TO-220FB-3L G050N10 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HYG050N10NS1P Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature -55 to 175 °C Storage Temperature Range -55 to 175 °C Tc=25°C 135 A Tc=25°C 510 A Tc=25°C 135 A Tc=100°C 95.5 A Tc=25°C 189.8 W Tc=100°C 94.9 W 0.79 °C/W 62 °C/W 452 mJ TJ TSTG IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient ** EAS Single Pulsed-Avalanche Energy *** * ** *** L=0.3mH Repetitive rating；pulse width limited by max. junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, VDS=80V, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG050N10NS1 Unit Min Typ. Max VGS=0V,IDS=250μA 100 - - V VDS=100V,VGS=0V - - 1.0 μA - - 50 μA 4 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250μA 2 3 Gate-Source Leakage Current VGS=±20V,VDS=0V - - Drain-Source On-State Resistance VGS=10V,IDS=50A - ISD=50A,VGS=0V ±100 nA 4.4 5.2 mΩ - 0.89 1.3 V - 54.2 - ns - 73.7 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=50A,dISD/dt=100A/μs 2 V1.0 HYG050N10NS1P Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG050N10NS1 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.0 - Ciss Input Capacitance - 6359 - Coss VDS=50V, - 716 - Frequency=1.0MHz - 77 - td(ON) Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time VGS=0V, - 21 - Tr Turn-on Rise Time VDD=50V,RG=4Ω, - 82 - td(OFF) Turn-off Delay Time IDS=50A,VGS=10V - 71 - - 104 - - 100 - - 30 - - 22 - Crss Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=50V, VGS=10V， ID=50A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com 3 V1.0 HYG050N10NS1P Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com ID-Drain Current(A) 4 V1.0 HYG050N10NS1P Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) Figure 10: Gate Charge Characteristics C-Capacitance(F) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VSD-Source-Drain Voltage(V) VDS-Drain-Source Voltage (V) www.hymexa.com QG-Gate Charge (nC) 5 V1.0 HYG050N10NS1P Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 6 V1.0 HYG050N10NS1P Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 7 V1.0 HYG050N10NS1P Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 8 V1.0 HYG050N10NS1P Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness