HYG090ND06LS1C2

HYG090ND06LS1C2 Dual N-Channel Enhancement Mode MOSFET Feature  Pin Description 60V/56A RDS(ON)= 8.0 mΩ(typ.) @VGS = 10V RDS(ON)= 12.2 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available PIN1 (RoHS Compliant) PDFN8L(5x6) Applications  Switching Application  Power Management for DC/DC Dual N-Channel Ordering and Marking Information MOSFET Package Code C2 C2: PDFN8L(5x6) G090ND06 Date Code XXXYWXXXXX XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HYG090ND06LS1C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C Tc=25°C 56 A Tc=25°C 220 A Tc=25°C 56 A Tc=70°C 39.5 A Tc=25°C 60 W Tc=70°C 30 W IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJc Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 50 °C/W EAS SinglePulsed-Avalanche Energy ** 83 mJ * ** L=0.3mH Repetitive rating；pulse width limited by max.junction temperature. Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG090ND06LS1 Max Unit Min Typ. 60 - - - 1 μA - - 50 μA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source LeakageCurrent VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=60V,VGS=0V TJ=125°C V Gate Threshold Voltage VDS=VGS, IDS=250μA 1 1.9 3 V Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA VGS=10V,IDS=20A - 8.0 9.8 VGS=4.5V,IDS=20A - 12.2 14.8 Drain-Source On-State Resistance mΩ Diode Characteristics VSD* Diode Forward Voltage ISD=20A,VGS=0V - 0.87 - V trr Reverse Recovery Time ISD=20A,dISD/dt=100A/μ - 22.9 - ns Qrr Reverse Recovery Charge s - 15 - nC www.hymexa.com V1.0 2 HYG090ND06LS1C2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG090ND06LS1 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V, F=1MHz - 2.1 - Ciss Input Capacitance VGS=0V, - 926 - Coss Output Capacitance VDS=25V, - 505 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 39 - td(ON) Turn-on Delay Time - 7.7 - Tr Turn-on Rise Time VDD=30V,RG=4Ω, - 31.7 - td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 18.4 - - 34.8 - - 18.5 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge（VGS=10V） Qg Total Gate Charge（VGS=4.5V) VDS =48V, VGS=10V, - 9.4 - Qgs Gate-Source Charge ID=20A - 3.9 - Qgd Gate-Drain Charge - 4.8 - nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG090ND06LS1C2 Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case Figure 6: Drain-Source On Resistance VDS-Drain-Source Voltage(V) ID-Drain Current(A) RDS(ON)-ON-Resistance(Ω) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.0 4 HYG090ND06LS1C2 Typical Operating Characteristics Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics VGS-Gate-Source Voltage (V) VSD-Source-Drain Voltage(V) C-Capacitance(pF) Tj-Junction Temperature (℃) VDS-Drain-Source Voltage (V) QG-Gate Charge (nC) www.hymexa.com V1.0 5 HYG090ND06LS1C2 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HYG090ND06LS1C2 Device Per Unit Package Type Unit Quantity PDFN8L(5x6) Reel 5000 Package Information PDFN8L(5x6) www.hymexa.com V1.0 7 HYG090ND06LS1C2 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 8 HYG090ND06LS1C2 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness