VS3620GEMC

VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET Features  Enhancement mode  Very low on-resistance  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency V DS 30 V R DS(on),TYP@ VGS=10 V 4.9 mΩ R DS(on),TYP@ VGS=4.5 V 8 mΩ I D(Silicon Limited) 60 A I D(Package Limited) 40 A PDFN3333  100% Avalanche test Part ID Package Type Marking Packing VS3620GEMC PDFN3333 3620GE 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 30 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC = 25°C 60 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 25°C 60 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 100°C 38 A ID Continuous drain current @VGS=10V (Package limited) TC = 25°C 40 A IDM Pulse drain current tested ① TC = 25°C 240 A IDSM Continuous drain current @VGS=10V TA = 25°C 21 A TA = 70°C 17 A EAS Avalanche energy, single pulsed ② 20 mJ PD Maximum power dissipation TC = 25°C 30 W TC = 100°C 12 W PDSM Maximum power dissipation ③ TA = 25°C 3.6 W TA = 70°C 2.3 W TSTG,TJ Storage and Junction Temperature Range -55 to 150 °C Typical Max Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 4.2 5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 35 42 °C/W Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 www.vgsemi.com VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.8 2.4 V RDS(on) Drain-Source On-State Resistance ④ -- 4.9 6.4 mΩ -- 5.7 -- mΩ -- 8 10.5 mΩ 565 750 1000 pF 415 550 730 pF 55 70 95 pF 0.2 1.9 5 Ω -- 15 20 nC IDSS RDS(on) Drain-Source On-State Resistance ④ VGS=10V, ID=20A (Tj=100℃) VGS=4.5V, ID=10A Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VDS=15V,ID=20A, -- 7.9 10.5 nC Qgs Gate-Source Charge VGS=10V -- 2.9 3.9 nC Qgd Gate-Drain Charge -- 3.6 5.4 nC -- 5.6 -- ns VDS=15V,VGS=0V, f=1MHz f=1MHz Switching Characteristics Td(on) Turn-on Delay Time Tr Turn-on Rise Time ID=20A, -- 60 -- ns Td(off) Turn-Off Delay Time RG=3Ω, -- 15 -- ns -- 9.6 -- ns VDD=15V, VGS=10V Tf Turn-Off Fall Time Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.9 1.2 V Trr Reverse Recovery Time Isd=20A, VGS=0V -- 10 20 ns Qrr Reverse Recovery Charge di/dt=100A/μs -- 1 2 nC NOTE: ① Single pulse; pulse width ≤ 100μs. ② Limited by TJmax, starting TJ = 25°C, L = 0.1mH, RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 380μs; duty cycle≤ 2%. Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 www.vgsemi.com VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET Typical Characteristics 2.1 100 VGS(TH), Gate -Source Voltage (V) 10V,5V,4.5V,4V ID, Drain-Source Current (A) VGS= 3.5V 80 Notes: 1. 250μs pulse test 2. Tj=25°C 60 40 VGS= 3V 20 IDS= 250uA 1.8 1.5 1.2 0.9 0 0 1 2 3 4 5 6 0 7 25 VDS, Drain -Source Voltage (V) 75 100 125 150 175 Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj 100 2.5 VDS=5V Normalized On Resistance 80 ID, Drain-Source Current (A) 50 60 40 125°C 25°C 20 2.0 VGS= 10V ID= 20A 1.5 VGS= 4.5V 1.0 ID= 10A 0.5 0 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) Fig4. Normalized On-Resistance Vs. Tj Fig3. Typical Transfer Characteristics 10 16 VGS=4.5V IDS= 20A 14 8 On Resistance (mΩ) On Resistance (mΩ) 12 10 125°C 8 6 25°C 4 6 VGS=10V 4 2 2 0 0 0 2 4 6 8 10 VGS, Gate -Source Voltage (V) Fig5. On Resistance Vs Gate -Source Voltage Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 12 5 8 11 14 17 20 ID, Drain-Source Current (A) Fig6. On Resistance Vs Drain Current and Gate Voltage www.vgsemi.com VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET Typical Characteristics 10 Tj=125°C Tj=25°C 1 RDS(ON) limited ID - Drain Current (A) ISD, Reverse Drain Current (A) 1000 100 10µs 100µs 10 1ms 10ms DC 1 TC=25°C 0.1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1.6 10 100 1000 VDS, Drain -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig7. Typical Source-Drain Diode Forward Voltage Fig8. Maximum Safe Operating Area 10 VGS, Gate-Source Voltage (V) 1500 Frequency=1 MHZ 1200 C, Capacitance (pF) 1 900 Ciss 600 Coss 300 VDS= 15V ID= 20A 8 6 4 2 Crss 0 0 5 10 15 20 25 0 30 0 3 6 9 12 15 Qg - Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig9. Typical Capacitance Vs. Drain-Source Voltage Fig10. Typical Gate Charge Vs. Gate-Source Voltage 80 40 ID, Maximum Drain Current (A) Ptot, Power Dissipation (W) package limited -------- silicon limited 30 20 10 25 40 20 ID=f(TC);VGS≥10V Ptot=f(TC) 0 0 0 60 50 75 100 125 150 TC - Case Temperature (°C) Fig11. Power Dissipation Vs. Case Temperature Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 175 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Fig12. Maximum Drain Current Vs. Case Temperature www.vgsemi.com VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET Thermal Resistance ZθJC Normalized Transient Typical Characteristics Pulse Width (s) Fig13 . Normalized Maximum Transient Thermal Impedance Fig14. Unclamped Inductive Test Circuit and waveforms Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 Fig15. Switching Time Test Circuit and waveforms www.vgsemi.com VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET Marking Information Vs 3620GE XXXYWW 1st line： 2nd line： 3rd line： Vergiga Code（Vs） Part Number（3620GE） Date code （XXXYWW） XXX： Wafer Lot Number Code , code changed with Lot Number Y： Year Code , refer to table below WW： Week Code (01 to 53) Code C D E F G H J K L M N P Q R S T Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 www.vgsemi.com VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET PDFN3333 Package Outline Data Symbol DIMENSIONS ( unit : mm ) Min Typ Max A 0.7 0.75 0.8 Notes: b 0.25 0.3 0.35 1. Follow JEDEC MO-240 variation CA. C 0.1 0.15 0.25 2. Dimensions "D1" and "E1" do NOT include mold flash D 3.25 3.35 3.45 protrusions or gate burrs. D1 3 3.1 3.2 3. Dimensions "D1" and "E1" include interterminal flash or D2 1.78 1.88 1.98 protrusion. Interterminal flash or protrusion shall not exceed D3 -- 0.13 -- E 3.2 3.3 3.4 E1 3 3.15 3.2 E2 2.39 2.49 2.59 e 0.65 BSC H 0.3 0.39 0.5 L 0.3 0.4 0.5 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 * Not specified Copyright Vergiga Semiconductor Co., Ltd Rev B – MAR, 2022 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vergiga Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com