SWHA056R68E7T

SW056R68E7T N-channel Enhanced mode DFN5*6 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ General Description BVDSS : 68V DFN5*6 High ruggedness Low RDS(ON) (Typ 5.5mΩ)@VGS=10V Low Gate Charge (Typ 99nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter 1 8 7 6 5 2 3 4 ID : 100A RDS(ON) : 5.5mΩ D G 4. Gate 5,6,7,8.Drain 1,2,3.Source S This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW HA 056R68E7T SW056R68E7T DFN5*6 REEL Value Unit 68 V Continuous drain current (@Tc 100* A Continuous drain current (@Tc=100oC) 63* A 400 A Continuous drain current (@Ta=25oC) 17 A Continuous drain current (@Ta=70oC) 14 A ± 20 V Absolute maximum ratings Symbol VDSS Parameter Drain to source voltage =25oC) ID IDM IDSM Drain current pulsed (note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 289 mJ EAR Repetitive avalanche energy (note 1) 20 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@Tc=25oC) 83.3 W =25oC) 2.6 W -55 ~ + 150 oC Value Unit PD TSTG, TJ Total power dissipation (@Ta Operating junction temperature & storage temperature *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case 1.5 oC/W Rthja Thermal resistance, Junction to ambient 49 oC/W Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's board design. DFN5*6 Rthja : 49oC/W on a 1 in2 pad of 2oz copper. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 1/6 SW056R68E7T Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 68 V V/oC 0.04 VDS=68V, VGS=0V 1 uA VDS=54V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4 V 6.8 mΩ IGSS On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs Forward transconductance VDS=VGS, ID=250uA 2 VGS=10V, ID=30A,TJ=25oC 5.5 VGS=10V, ID=30A,TJ=125oC 7.7 mΩ VDS=5V, ID=30A 44 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 5021 VGS=0V, VDS=34V, f=1MHz 365 pF 317 26 VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 64 ns 90 Fall time 36 Qg Total gate charge 99 Gate-drain charge VDS=54V, VGS=10V, ID=30A , IG=4mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 3.3 25 nC 34 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=45A, VGS=0V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 100 A 400 A 1.4 V 40 ns 55 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =34A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 2/6 SW056R68E7T Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 3/6 SW056R68E7T Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area Fig. 8. Capacitance Characteristics Fig. 10. Maximum drain current vs. case temperature Fig. 11. Transient thermal response curve Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 4/6 SW056R68E7T Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 5/6 SW056R68E7T Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) VDS RG IRRM Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 6/6