SI2365EDS-T1-GE3

SI2365EDS-T1-GE3 www.VBsemi.com P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.035 at VGS = - 10 V - 5e 0.043 at VGS = - 4.5 V -5e 0.061 at VGS = - 2.5 V - 4.8 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters TO-236 (SOT-23) G 1 3 S D 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 20 ± 12 - 5e - 4.8 - 4.5b, c - 3.5b, c - 18 - 2.1 - 1.0b, c 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A W °C THERMAL RESISTANCE RATINGS Parameter 5 s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W 服务热线：400-655-8788 1 SI2365EDS-T1-GE3 www.VBsemi.com MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage V - 13.4 VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V VGS = - 10 V, ID = - 5.1 A 0.035 RDS(on) VGS = - 4.5 V, ID = - 4.5 A 0.043 VGS = - 2.5 V, ID = - 3.7 A 0.061 VDS = - 5 V, ID = - 5.1 A 15 VDS = - 10 V, VGS = 0 V, f = 1 MHz 180 Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 2.9 - 0.5 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 - 18 µA A  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 835 155 VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A Turn-On Delay Time tr td(off) Turn-Off Delay Time VDS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A nC 1.7 3.4 f = 1 MHz VDD = - 10 V, RL = 2.4  ID = - 4.1 A, VGEN = - 4.5 V, Rg = 1  tf Fall Time 10 6.4 td(on) Rise Time pF 0.9 4.4 8.8 22 33 20 30 28 42 9 18  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.1 - 20 IS = - 4.1 A IF = - 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 23 35 ns 12 20 nC 15 8 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 SI2365EDS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 20 VGS = 5 V thru 3 V ID - Drain Current (A) ID - Drain Current (A) 4 VGS = 2.5 V 15 10 VGS = 2 V 3 2 TC = 25 °C 5 1 TC = 125 °C VGS = 1.5 V 0 TC = - 55 °C 0 0 0.5 1 1.5 2 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2 1400 0.08 RDS(on) - On-Resistance (Ω) VGS = 2.5 V 1050 VGS = 4.5 V 0.04 VGS = 10 V C - Capacitance (pF) 0.06 Ciss 700 350 0.02 Coss Crss 0 0.00 0 5 10 15 20 0 5 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 20 1.5 ID = 5.1 A VGS = 10 V 4 VDS = 5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 3 VDS = 10 V 2 VDS = 16 V 1.3 1.1 0.9 1 VGS = 4.5 V 0 0 3 6 9 12 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 服务热线：400-655-8788 3 SI2365EDS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.08 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 5.1 A 0.06 TJ = 25 °C 0.04 TJ = 125 °C 0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 VSD - Source-to-Drain Voltage (V) 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.1 10 8 Power (W) 1.0 VGS(th) (V) 6 ID = 250 μA 0.8 6 4 0.7 2 0.5 - 50 - 25 0 25 50 100 75 125 TA = 25 °C 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 1 s, 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 SI2365EDS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID - Drain Current (A) 6 Package Limited 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1 3 2.5 0.8 Power (W) Power (W) 2 1.5 0.6 0.4 1 0.2 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 SI2365EDS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 SI2365EDS-T1-GE3 www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 7 SI2365EDS-T1-GE3 www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 服务热线：400-655-8788 8 SI2365EDS-T1-GE3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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