AO6604

UMW R AO6604 N + P Channel MOSFET D1 D2 General Description The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. G2 G1 S2 S1 n-channel Product Summary p-channel N-Ch: l V DS (V)=20V l RDS(ON) l RDS(ON) l RDS(ON) 65m (VGS = 4.5V) 75 m (VGS = 2.5V) 100m (VGS = 1.8V) P-Ch: l V DS (V) =-20V l RDS(ON) 75m (VGS = -4.5V) l RDS(ON) 95m (VGS = -2.5V) l RDS(ON) 115m (VGS = -1.8V) VGS Gate-Source Voltage TA=25°C ID TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com Steady-State Steady-State 6 D1 S2 2 5 S1 G2 3 4 D2 Max p-channel -20 Units V ±8 ±8 V 3.4 -2.5 2.5 -2 13 -13 1.1 1.1 0.7 0.7 TJ, TSTG -55 to 150 Symbol t ≤ 10s 1 SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol Drain-Source Voltage VDS 20 Continuous Drain Current G1 Typ 78 106 64 RθJA RθJL 1 A W °C Max 110 150 80 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO6604 N + P Channel MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V Min Typ 20 IGSS Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 13 0.7 VGS=2.5V, ID=3A 58 75 mΩ 100 mΩ 68 16 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr V mΩ VDS=5V, ID=3.4A Gate resistance nA 1 65 VGS=1.8V, ID=2A Rg ±100 51 Forward Transconductance Output Capacitance µA VGS=4.5V, ID=3.4A gFS Reverse Transfer Capacitance 1 A Static Drain-Source On-Resistance Crss Units V RDS(ON) Coss Max VGS=4.5V, VDS=10V, ID=3.4A S 1 V 1.5 A 205 260 320 pF 33 48 63 pF 16 27 38 pF 1.5 3 4.5 Ω 2.9 3.8 nC 0.4 nC 0.6 nC 2.5 ns VGS=5V, VDS=10V, RL=2.95Ω, RGEN=3Ω 3.2 ns 21 ns IF=3.4A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 3.8 Body Diode Reverse Recovery Time 3 ns 19 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using