AOD480-MS

www.msksemi.com AOD480-MS Semiconductor Compiance Description The AOD480-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =20A RDS(ON) < 25mΩ@ VGS=10V PIN2 D ! Application " PIN1 G ! Battery protection ! " " " Load switch ! Uninterruptible power supply PIN3 S N-Channel MOSFET TO-252 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 15 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 7.3 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 5.8 A IDM Pulsed Drain Current2 50 A EAS Single Pulse Avalanche Energy3 8.1 mJ IAS Avalanche Current 12.7 A PD@TC=25℃ Total Power Dissipation4 20.8 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 6 ℃/W www.msksemi.com AOD480-MS Semiconductor Compiance Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ VGS=10V , ID=10A --- 18 25 25 38 1.0 1.2 2.5 VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ ----- -4.2 --- --1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=8A mΩ V RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 5.5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω Qg Total Gate Charge (4.5V) --- 4.9 --- Qgs Gate-Source Charge --- 1.66 --- Qgd Gate-Drain Charge --- 1.85 --- Td(on) Turn-On Delay Time --- 1.6 --- --- 15.8 --- --- 13 --- --- 4.8 --- --- 416 --- --- 62 --- --- 51 --- --- --- 24 A --- --- 50 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V IF=10A , dI/dt=100A/µs , TJ=25℃ --- 8.7 --- nS --- 1.95 --- nC Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS Continuous Source Current1,5 ISM VSD Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=15V , VGS=4.5V , ID=10A VDD=15V , VGS=10V , RG=3.3 ID=10A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current mV/℃ uA nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3he test condition is V≦ 300us , duty cycle DD=25≦V,V 2%GS =10V,L=0.1mH,IAS=12.7A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.msksemi.com AOD480-MS Semiconductor Compiance Typical Characteristics 65 RD S O N( m Ω ) ID= 1 0 A 50 35 20 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage IS Source Current(A) 6 4 TJ=150℃ 2 0 0.00 0.25 0.50 TJ=25℃ 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.msksemi.com AOD480-MS Semiconductor 1000 Compiance 100.00 F=1.0MHz 100us 10.00 1ms 100 ID (A) Capacitance (pF) Ciss Coss 10ms 100ms DC 1.00 Crss 0.10 Tc=25o C Single Pulse 10 1 5 9 13 17 21 25 0.01 0.1 VDS Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON 0.02 0.01 T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform www.msksemi.com AOD480-MS Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c E V L3 h L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 0° 0.000 5.250 REF. 8° 0.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0° 0.000 0.207 REF. 8° 0.012 REEL SPECIFICATION P/N PKG QTY AOD480-MS TO-252 2500 www.msksemi.com AOD480-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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