WSD6035DN

WSD6035DN Dual N-Ch MOSFET Product Summery General Description The WSD6035DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD6035DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 60V 20mΩ 40A Applications • High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA • Networking DC-DC Power System Features • Load Switch • Advanced high cell density Trench technology DFN3x3-8-EP Pin Configuration • Super Low Gate Charge • Excellent CdV/dt effect decline • 100% EAS Guaranteed • Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V 40 A ID@TC=25℃ ID@TC=100℃ IDM 1 Continuous Drain Current, VGS @ 10V 1 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 18 A 114 A mJ EAS Single Pulse Avalanche Energy 25.5 IAS Avalanche Current 22 A 4 34.7 W 4 PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 80 ℃/W --- 3.6 ℃/W Rev1.Apr.2019 WSD6035DN Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gf gfs = VGS=0V , ID 250uA Typ. Max. 60 --- --- V --- 0.063 --- V/℃ VGS=10V , ID=15A --- 20 32 VGS=4.5V , ID=10A --- 30 38 1.2 1.6 2.5 VDS=48V , VGS=0V , TJ=25℃ --- - 1 VDS=48V , VGS=0V , TJ=55℃ --- - 5 VGS=±20V , VDS=0V --- - ±100 nA VDS=5V , ID=15A --- 17 --- S VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω --- 12.6 --- --- 3.2 --- mV/℃ Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 6.3 --- Turn-On Delay Time --- 8 --- Td(off) Tf V --5 Gate Resistance Tr mΩ ----- Rg Td(on) Unit Reference to 25℃ , ID=1mA VGS=VDS , ID =250uA orward Transconductance Min. VDS=30V , VGS=4.5V , ID=12A uA nC Rise Time VDD=30V , VGEN=10V , --- 14.2 --- Turn-Off Delay Time RG=3.3Ω ID=10A --- 24.4 --- --- 4.6 --- --- 1370 --- --- 85 --- --- 64 --- Min. Typ. Max. Unit --- --- mJ Typ. Max. Unit Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=22A 20 Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=15A,dI/dt=100A/µs,TJ=25℃ Min. ----- - 23 A --- --- 46 A --- - 1.2 V --- 22 --- nS --- 51 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t