ESD73111CZ-2/TR

ESD73111CZ ESD73111CZ http//:www.omnivision-group.com 1-Line, Bi-directional, Ultra-low Capacitance Transient Voltage Suppressor Descriptions The ESD73111CZ is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect DWN0603-2L (Bottom View) sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESD73111CZ incorporates one pair of ultra-low Pin1 Pin2 capacitance diodes. The ESD73111CZ may be used to provide ESD protection up to ±10kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 6A (8/20μs) Pin configuration according to IEC61000-4-5. The ESD73111CZ is available in DWN0603-2L package. Standard products are Pb-free and Halogen-free. Features  Stand-off voltage: ±5.0V Max.  Transient protection for each line according to Device code Marking (Top View) IEC61000-4-2 (ESD): ±10kV (contact discharge) Order information : ±15kV (air discharge) IEC61000-4-5 (surge): 6A (8/20μs)  Low capacitance: CJ = 0.15pF typ.  Low leakage current  Low clamping voltage: VCL = 8.0V typ. @ IPP = 16A (TLP)  Solid-state silicon technology Device Package Shipping ESD73111CZ-2/TR DWN0603-2L 10000/Tape&Reel Applications  USB 3.0 and USB3.1  HDMI 1.4 and HDMI 2.0  Thunderbolt  Cellular handsets Will Semiconductor Ltd. 1 Revision 1.2, 2021/01/05 ESD73111CZ Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 30 W Peak pulse current (tp = 8/20μs) IPP 6 A ESD according to IEC61000-4-2 air discharge ±15 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±10 125 o -40~85 o 260 o -55~150 o TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off Voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VHOLD VTRIG VBR VCLVRWM IBR ITRIG IR IR I ITRIG BR VBRVTRIG V VRWMVCL VHOLD IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.2, 2021/01/05 ESD73111CZ o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current Reverse breakdown voltage Clamping voltage 1) Dynamic resistance 1) IR IT = 1mA VCL IPP = 16A, tp = 100ns VCL Clamping voltage 3) VCL CJ Typ. 9.5 11 Max. Unit ±5.0 V 1.0 µA 12.5 V 8.0 V 0.34 Ω VESD = 8kV 8.0 V IPP = 1A, tp = 8/20μs 3.0 3.5 V IPP = 6A, tp = 8/20μs 5.5 6.5 V VR = 1.5V, f = 1MHz 0.15 0.20 pF RDYN 2) Min. VRWM = 5.0V VBR Clamping voltage Junction capacitance Condition Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.2, 2021/01/05 ESD73111CZ o Typical characteristics (TA=25 C, unless otherwise noted) 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8μs 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns CJ - Junction capacitance (pF) 5.8 VC - Clamping voltage (V) Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 Pulse waveform: tp = 8/20s 5.6 t 60ns 30ns 30 5.4 5.2 5.0 4.8 4.6 4.4 0.20 f = 1MHz VAC = 50mV 0.19 0.18 0.17 0.16 0.15 0.14 0.13 4.2 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 0.12 -5 -4 -3 IPP - Peak pulse current (A) -2 -1 0 1 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 100 % of Rated power Peak pulse power (W) 1000 100 80 60 40 20 10 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 1.2, 2021/01/05 ESD73111CZ o Typical characteristics (TA = 25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 TLP current (A) 15 10 Z0 = 50 tr = 2ns tp = 100ns 5 0 -5 -10 -15 -20 -14-12-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.2, 2021/01/05 ESD73111CZ PACKAGE OUTLINE DIMENSIONS DWN0603-2L D H E W P BOTTOM VIEW A TOP VIEW SIDE VIEW Dimensions in Millimeters Symbol Min. Typ. Max. A 0.29 0.31 0.34 E 0.29 0.32 0.35 D 0.59 0.62 0.65 W 0.15Ref H 0.21Ref P 0.38Ref Recommend land pattern (Unit: mm) 0.20 0.25 0.18 Notes: This recommended land pattern is for reference 0.38 purposes only. Please consult your manufacturing 0.58 group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 6 Revision 1.2, 2021/01/05 ESD73111CZ TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 7 Q4 Revision 1.2, 2021/01/05