ESD56301D05-2/TR

ESD56301D05 ESD56301D05 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD56301D05 is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56301D05 is specifically designed to protect power lines. DFN1610-2L The ESD56301D05 is available in DFN1610-2L package. Standard products are Pb-free and Halogen-free. Features  Reverse stand-off voltage: 5.0V  Surge protection according to IEC61000-4-5 Circuit diagram see Table 4  ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge)  Low clamping voltage  Solid-state silicon technology Pin1 W* Pin2 Applications W= Device code  Power supply protection * = Month code  Power management Marking (Top View) Order information Table 1. Device Package Shipping Marking ESD56301D05-2/TR DFN1610-2L 10000/Tape&Reel Will Semiconductor Ltd. W* 1 Revision 1.0, 2020/2/27 ESD56301D05 Absolute maximum ratings Table 2. Parameter Peak pulse power (tp = 8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 1600 W ±30 VESD ESD according to IEC61000-4-2 contact discharge ±30 kV TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA = 25oC, unless otherwise noted) I VRWM Reverse stand-off voltage IPP IR Reverse leakage current VF Forward voltage VBR Reverse breakdown voltage IF Forward current IBR Reverse breakdown current VFC Forward clamping voltage VCL Clamping voltage IPP Peak pulse current VTRIG Reverse trigger voltage ITRIG IHOLD VFC VF IBR Reverse trigger current VHOLD Reverse holding voltage ITRIG IR IHOLD VRWM VBR Reverse holding current VTRIG V VCL VHOLD IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.0, 2020/2/27 ESD56301D05 Electrical characteristics (TA = 25oC, unless otherwise noted) Table 3. Reverse Stand-off Type number Voltage Breakdown voltage VBR(V) IBR = 1mA VRWM (V) ESD56301D05 Junction Reverse leakage current IRM(μA) at VRWM capacitance F = 1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Typ. Max. 5.0 5.2 6.0 7.0 - 1 600 700 Table 4. Type number Rated peak pulse current IPP (A)1)3) ESD56301D05 170 Clamping voltage Typ. VCL(V) at IPP(A) 1)3) Clamping voltage Typ. VCL(V) at IPP = Typ. VCL(V) at 2)3) VESD = 8kV 2)3) 16A, tp = 100ns 9.5 6.5 Clamping voltage 8.5 Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform) 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.0, 2020/2/27 ESD56301D05 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Electrical characteristics (TA = 25oC, unless otherwise noted) 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns 9.0 8.5 8.0 7.5 7.0 6.5 700 f = 1MHz VAC = 50mV 600 500 400 300 6.0 5.5 0 20 40 60 80 200 100 120 140 160 180 0 1 IPP - Peak pulse current (A) 3 4 5 Capacitance vs. Reverse voltage 100 % of Rated power 10 1 0.1 2 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Peak pulse power (kW) VC - Clamping voltage (V) CJ - Junction capacitance (pF) Pulse waveform: tp = 8/20s 9.5 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 10.0 t 60ns 30ns 30 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 1.0, 2020/2/27 ESD56301D05 TLP current (A) Typical characteristics (TA=25oC, unless otherwise noted) 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) Z0 = 50 tr = 2ns tp = 100ns -2 -1 0 1 2 3 4 5 6 7 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.0, 2020/2/27 ESD56301D05 PACKAGE OUTLINE DIMENSIONS DFN1610-2L D h b E L e BOTTOM VIEW A1 c A TOP VIEW h SIDE VIEW Dimensions in Millimeters Symbol Min. Typ. Max. A 0.45 0.50 0.55 A1 0.00 0.02 0.05 c 0.15 Ref. b 0.75 0.80 0.85 L 0.35 0.40 0.45 D 1.55 1.60 1.65 E 0.95 1.00 1.05 e 1.10 BSC h 0.20 Ref. Recommend PCB Layout (Unit: mm) 0.625 1.000 0.600 Notes: This recommended land pattern is for reference 1.225 purposes only. Please consult your manufacturing 1.850 group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 6 Revision 1.0, 2020/2/27 ESD56301D05 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 7 Q4 Revision 1.0, 2020/2/27