WS3208D56-8/TR

WS3208D WS3208D Over Voltage and Over Current Protection IC Http//:www.sh-willsemi.com Descriptions The WS3208D is an Over-Voltage-Protection (OVP) and Over-Current-Protection (OCP) device. The device will switch off internal MOSFET to disconnect VIN to VOUT to protect load when any of input voltage, input current over the threshold. The over temperature DFN2x2-6L protection (OTP) function monitors chip temperature to protect the device. The WS3208D is available in DFN2x2-6L package. Standard products are Pb-free and Halogen-free. VIN 1 6 VIN 2 5 VOUT GND 3 GND VOUT 4 NC Features Pin configuration (Top view)  High voltage technology  Maximum input voltage : 28V  Output power ON time : 1.5ms (Typ.)  OVP threshold : 5.7V (Typ.)  OVP response time : 1us (Typ.)  OCP threshold : 2A (Min.)  Output discharge  Package :DFN2x2-6L 3208 = Device code WD = Company code YW = Year Week Applications  GPS  PMP  MID  PAD  Digital cameras  Digital Videos Will Semiconductor Ltd. Marking Order information Device WS3208D56-8/TR 1 Package Shipping DFN2x2-6L 3000/Reel&Tape Aug, 2016 - Rev. 1.3 WS3208D Typical applications Pin descriptions Pin No. Symbol 3 GND WS3208 VIN 1,2 VIN VOUT VOUT 5,6 Descriptions Power ground Input pin, connect to AC adaptor or VBUS. A 1uF low 1uF/50V GND 3 ESR ceramic capacitor or 1uF 1,2 VIN larger must be connected as close as to this pin. It is recommended to use 50V capacitor or according to application. 5,6 VOUT Output pin, Connect to load. Block diagram OUT IN Charge Pump OCP Control Logic Vref OTP GND Will Semiconductor Ltd. 2 Aug, 2016 - Rev. 1.3 WS3208D Absolute maximum ratings Parameter Input voltage (IN pin) Output voltage (OUT pin) Junction temperature Lead temperature(10s) Storage temperature ESD Ratings Symbol Value Unit VIN -0.3 ~ 28 V VOUT -0.3 ~ 6.5 V 150 o 260 o Tstg -55 ~ 150 o HBM ±4000 V MM ±400 V TJ TL C C C Recommend operating conditions (Ta=25oC, unless otherwise noted) Parameter Symbol Value Unit Input voltage VIN 3 ~ 28 V Output current IOUT ≤1.5 Ambient operating temperature Will Semiconductor Ltd. Topr -40 ~ 85 3 A o C Aug, 2016 - Rev. 1.3 WS3208D o Electronics Characteristics (Ta=25 C, Vin=5V, Cin=Cout=1uF, unless otherwise noted) Parameter Symbol Test conditions Min. Typ. Max. Unit IOUT =0A 280 380 uA IOUT =0.7A 190 250 mΩ DC characteristics and Power-ON-Reset Input quiescent current IQ IN-to-OUT ON resistance RON Output discharge resistance RDISCHARGE Under voltage lock out threshold UVLO VIN increasing from 0~3V 2.3 Under voltage lock out hysteresis VHYS-UVLO VIN decreasing from 3~0V 200 From Vin > UVLO to Vout = 0.9 Output power-on time TON Ω 500 2.9 V 250 300 mV 1.5 2.5 ms 90%×Voutset Output power-on delay time T1 From Vin > UVLO to Vout = 1.3 ms 0.2 ms 10%×Voutset Output rise time Tr From Vout = 10%×Voutset to Vout = 90%×Voutset Input Over-Voltage-Protection (OVP) OVP threshold VOVP VIN increasing from 5~7V 5.5 5.7 5.9 V OVP hysteresis VHYS-OVP VIN decreasing from 7~5V 200 300 400 mV OVP active time TOVP From Vin > VOVP to Vout began 1 us to decline OVP recovery time TON(OVP) From Vin < VOVP-VHYS-OVP to 0.9 1.5 2.5 ms Vout = 90%×Voutset Input Over-Current-Protection (OCP) OCP threshold IOCP 2.0 A Over-Temperature-Protection (OTP) OTP threshold OTP hysteresis 165 o 40 o C TIMING DIAGRAMS