WPM2083-3/TR

WPM2083 WPM2083 Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Typical RDS(on) (mΩ) -20 D 81 @ VGS=-4.5V S 110 @ VGS=-2.5V G SOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2083 is Pb-free and Halogen-free. 1 2 G S Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23 PC = Device Code Y = Year W = Week(A~z) Marking Applications Order information  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Will Semiconductor Ltd. Device Package Shipping WPM2083-3/TR SOT-23 3000/Tape&Reel 1 Mar.2018- Rev.1.1 WPM2083 Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V -2.4 -2.2 -1.9 -1.8 0.9 0.8 0.6 0.5 -2.2 -2.0 -1.7 -1.6 0.8 0.6 0.5 0.4 A W A W Pulsed Drain Current c IDM -10 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s RθJA Steady State t ≤ 10 s RθJA Steady State Steady State RθJC Typical Maximum 105 135 120 155 130 160 145 190 60 75 a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W Mar.2018- Rev.1.1 WPM2083 Electronics Characteristics (Ta=25 C, unless otherwise noted) o Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS =-16V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±8V ±100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -0.65 -1 V Drain-to-source On-resistance RDS(on) VGS =-4.5V, ID = -2.4A 81 110 VGS =-2.5V, ID = -2.0A 103 150 ON CHARACTERISTICS -0.4 mΩ CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.5 Gate-to-Source Charge QGS ID =-2.4 A 0.7 Gate-to-Drain Charge QGD 1.6 Turn-On Delay Time td(ON) 9.8 Rise Time tr VGS = -4.5 V, VDS =-6 V, 4.4 Turn-Off Delay Time td(OFF) ID=-1A, RG=6Ω 35 Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = -10 V 486 pF 62 48 5.8 nC SWITCHING CHARACTERISTICS ns 7.4 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -2.4A 3 -0.8 -1.5 V Mar.2018- Rev.1.1 WPM2083 Typical Characteristics (Ta=25 C, unless otherwise noted) o V 5 20 5 15 VGS=-4.0V VGS=-4.5V -IDS-Drain Source Current(A) 6 = S G V . 5 = S G V () e g lta o V 1 5 VGS=-3.5V 12 VGS=-2.5V 9 6 VGS=-1.5V 3 0 0 1 2 3 VDS=-5V 4 3 O T=-50 C O T=150 C 2 1 O T=25 C 0 0.5 4 1.0 1.5 2.0 -VGS-Gate to Source Voltage(V) -VDS-Drain to Source Voltage(V) Output characteristics Transfer characteristics 0.40 0.20 ID=-2.4A 0.36 0.18 RDS(ON)-On-Resistance(Ω) S G VGS=-1.8V 0.16 0.14 VGS=-2.5V 0.12 0.10 VGS=-4.5V 0.08 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.06 1 2 3 4 0.04 1.0 5 -IDS-Drain to Source Current(A) On-Resistance vs. Drain current 1.5 1.4 VGS=-4.5V ID=-2.4A 1.2 1.1 1.0 0.9 0.8 0 50 100 2.5 3.0 3.5 150 1.2 4.0 4.5 ID=-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 0 50 100 150 o o Temperature ( C) Temperature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 2.0 On-Resistance vs. Gate-to-source voltage 1.3 -50 1.5 -VGS-Gate to Source Voltage (V) Gate Threshold Voltage Normalized V 8 = V 0 1 = S e rc u S -to n 1 0 -IDS-Drain to Source Current(A) V R DS(ON)-On Resistance(Ω) G V i -ra S D 5 RDS(ON)-On-Resistance Normalized )u t(A n re 6 4 in C e rc u S -to 2 IDS-ra 0 0 Threshold voltage vs. Temperature 4 Mar.2018- Rev.1.1 WPM2083 700 Capacitance (pF) F = 1MHZ Ciss 600 -ISD-Source to Drain Current (A) 5 500 400 300 Coss 200 Crss 100 0 0 3 6 9 12 4 3 o T=150 C 2 o T=25 C 1 0 0.0 15 0.2 Capacitance 0.8 1.0 1.2 Body diode forward voltage 100 120 o TJ(MAX)=150 C 100 o -ID-Drain Current (A) TA=25 C 80 60 40 10 Limit by Rdson 100us 1ms 1 10ms 10s 100ms 0.1 DC 1s o TA=25 C 20 Single Pulse 0 1E-4 0.6 -VSD-Source to Drain Voltage (V) -VDS-Drain to Source Voltage (V) Power (W) 0.4 1E-3 0.01 0.1 1 10 100 0.01 0.1 1000 BVDSS Limit 1 10 -VDS-Drian to Source Voltage(V) Pulse width (S) 100 *VGS>minimum VGS at which RDS(ON) is specified -VGS-Gate to Source Voltage (V) Single pulse power 4 Safe operating power VDS=-10V ID=-2.4A 3 2 1 0 1 2 3 Qg(nC) 4 5 Gate Charge Characteristics Will Semiconductor Ltd. 5 Mar.2018- Rev.1.1 WPM2083 Transient thermal response (Junction-to-Ambient) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 155_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Will Semiconductor Ltd. 6 Mar.2018- Rev.1.1 WPM2083 Package outline dimensions SOT-23 D E E1 b e c e1 TOP VIEW A1 A SIDE VIEW SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.89 1.10 1.30 A1 0.00 - 0.10 b 0.30 0.43 0.55 c 0.05 - 0.20 D 2.70 2.90 3.10 E 1.15 1.33 1.50 E1 2.10 2.40 2.70 e e1 Will Semiconductor Ltd. 0.95 Typ. 1.70 1.90 7 2.10 Mar.2018- Rev.1.1 WPM2083 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 8 Q4 Mar.2018- Rev.1.1