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RCLAMP0502B-MS
Semiconductor
Compiance
Features
45 Watts peak pulse power (tp = 8/20μs)
Unidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
Low capacitance (Cj=0.7 pF typ.)
Protection two data lines
IEC 61000-4-2 ±20kV contact ±15kV air
IEC 61000-4-4 (EFT) 40A(5/50ns)
IEC 61000-4-5 (Lightning) 3.5A (8/20μs)
SOT-523
3
Mechanical Data
SOT-523
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
Applications
Dataline
1
2
Automatic Teller Machines
Net works
Power line
Electrical Parameters (TA = 25°C unless otherwisenoted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRW M
IR
VBR
IT
I
IF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRW M
Breakdown Voltage @ IT
VC VBR VRWM
IR VF
IT
V
Test Current
IPP
Note:. 8/20μs pulsewaveform.
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RCLAMP0502B-MS
Semiconductor
Compiance
Absolute Maximum Rating
Rating
Symbol
Value
Units
Peak Pulse Power ( tp =8/20μs )
PPP
45
Watts
Peak Pulse Current ( tp =8/20μs )(note1)
Ipp
3.5
A
VESD
20
15
kV
Lead SolderingTemperature
TL
260(10seconds)
℃
JunctionTemperature
TJ
-55 to + 125
℃
StorageTemperature
Tstg
-55 to + 125
℃
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2 (Contact)
Electrical Characteristics
Parameter
Reverse Stand-OffVoltage
Symbol
Conditions
Min
Typical
VRWM
Max
Units
5
V
VBR
IT=1mA
Reverse LeakageCurrent
IR
VRWM=5V,T=25℃
1
μA
Peak Pulse Current
IPP
tp =8/20μs
3.5
A
Clamping Voltage
VC
IPP=3.5A,tp=8/20μs
25
V
JunctionCapacitance
Cj
VR = 0V, f =1MHz
0.8
pF
Reverse BreakdownVoltage
6
V
0.7
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RCLAMP0502B-MS
Semiconductor
Compiance
TypicalCharacteristics
Figure 2: Power Derating Curve
110
10
100
Percent of Rated Power for Ipp
Pp p – Peak Pulse Power - Ppp(KW)
Figure 1: Peak Pulse Power vs. Pulse Time
1
45w 8/20µswaveform
0.1
0.010.1
1
10
100
90
80
70
60
50
40
30
20
10
0
1,000
td – Pulse Duration - µs
Figure3: Pulse Waveform
90
Ipp
80
e-1
Percent
50
40
td=Ipp/2
20
75
100
125
150
18
Clamping Voltage–VC (V)
100
30
50
Ambient Temperature - TA (℃)
20
Waveform
Paramters
tr=8µs
td=20µs
60
25
Figure 4: Clamping Voltage vs.Ipp
110
70
0
16
14
Test
Waveform
Paramters
tr=8µs
td=20µs
12
10
8
6
4
10
2
0
0
5
10
15
Time (µs)
20
25
30
0
1
2
3
4
5
6
Peak Pulse Current–IPP (A)
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RCLAMP0502B-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500 TYP.
0.900
1.100
0.400 REF.
0.260
0.460
0°
8°
Dimensions In Inches
Min.
Max.
0.028
0.035
0.000
0.004
0.028
0.031
0.006
0.010
0.010
0.014
0.004
0.008
0.059
0.067
0.028
0.035
0.057
0.069
0.020 TYP.
0.035
0.043
0.016 REF.
0.010
0.018
0°
8°
REEL SPECIFICATION
P/N
RCLAMP0502B-MS
PKG
SOT-523
QTY
3000
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RCLAMP0502B-MS
Semiconductor
Compiance
Attention
■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
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aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
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performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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without the prior written permission of MSKSEMI Semiconductor.
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
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■ Any and all information described or contained herein are subject to change without notice due to
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