2N7002

2N7002 MOSFET N-Channel Enhancement-Mode MOSFET SOT-23 - ROHS Features  60V/0.2A, RDS(ON) = 7.5Ω(MAX) @VGS = 10V. Id = 0.5A R DS(ON) = 7.5Ω(MAX) @VGS = 5V . Id = 0.05A  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  SOT-23 for Surface Mount Package. MAXIMUM RANTINGS Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.2 A P o w er Dissip atio n PD 0.225 W R θJA 556 J unctio n T em p erature TJ 150 Sto rage T em p erature Tstg -50~+150 T herm al R esistance f ro m J unction to Am b ient ℃ /W ℃ Electrical Characteristics Parameter Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=250µA 60 - - V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 µA Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=250µA 1 - VGS =10V, ID =0.5A - 7.5 Ω VGS =5V, ID =0.05A - 7.5 Ω Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance * V RDS(ON) Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=0.2A 2.5 V Notes : *Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. Rev 8: Nov 2014 www.born-tw.com Page 1 of 3 2N7002 MOSFET N-Channel Enhancement-Mode MOSFET 0.6 0.8 0.7 VGS=4，4.5，5，6，7，8～10V 0.5 0.6 ID,Drain Current(Amps) ID,Drain Current(Amps) ROHS VGS=3V 0.5 0.4 0.3 0.2 0.4 0.3 Tj＝125℃ Tj＝25℃ 0.2 0.1 0.1 VGS=2.0V 0 0 0 1 2 3 4 VDS,Drain-to-Source Voltage(Volts) 0 5 Figure 1．Output Characteristics ID=250uA Vth,Normalized Gate-Source Threshold Voltage(V) BVDSS,Normalized Drain-Source Breakdown Voltage(Volts) 1.7 71 70 69 68 67 66 65 64 63 62 50 100 150 Tj.Junction Temperature(℃) 1.6 1.5 1.4 1.3 1.2 200 0 Figure 3．Breakdown Voltage Variation with Temperature 9 10 8 9 7 8 10V/0.5A 5 4 4.5V/0.2A 2 1 50 100 150 Tj.Junction Temperature(℃) 200 Figure 4．Gate Threshold Variation with Temperature RDS(on)-On Resistance(Ω) RDS(on),Normalized On-Resistance(Ω) ID=250uA 1.1 0 3 5 Figure 2．Transfer Characteristics 72 6 1 2 3 4 VGS,Gate-to-Source Voltage(Volts) 7 6 VGS=4.5V 5 4 VGS=10V 3 2 1 0 0 0 50 100 150 Tj.Junction Temperature(℃) 200 Figure 5．On-Resistance Variation with Temperature Rev 8: Nov 2014 www.born-tw.com 0 0.2 0.4 0.6 0.8 ID-Drain Current(A) 1 Figure 6．On-Resistance vs. Drain Current Page 2 of 3 2N7002 MOSFET N-Channel Enhancement-Mode MOSFET 12 ROHS 10 IS-Source Current(A) RDS(on)-On Resistance(Ω) 10 8 6 ID=0.5A 4 Tj＝150℃ 1 Tj＝25℃ ID=0.2A 2 0 0.1 0 2 4 6 8 10 VGS,Gate-to-Source Voltage(Volts) Figure 7．On-Resistance vs. Gate-to-Source Voltage 0 0.5 1 1.5 2 2.5 VSD-Source-to-Drain Voltage(V) Figure 8．Source-Drain Diode Forward Voltage SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2014 www.born-tw.com Page 3 of 3