NSI8263W0-DSWR

NSI826x High Reliability Reinforced Six-Channel Digital Isolators Datasheet (EN) 1.3 Product Overview Safety Regulatory Approvals The NSi826x devices are high reliability six-channel digital isolators. The NSi826x device is safety certified by UL1577 support several insulation withstand voltage(3kV,5kV), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi826x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. The NSi826x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi826x device supports to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use.  UL recognition: up to 5000Vrms for 1 minute per UL1577 Key Features  Up to 5000Vrms Insulation voltage  Date rate: DC to 150Mbps  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation Device Information Part Number NSI826x-DSWR Package SOP16(300mil） SSOP16 NSI826x-DSSR Body Size 10.30mm × 7.50mm 4.90mm × 3.90mm  Power supply voltage: 2.5V to 5.5V  High CMTI: 200kV/us Functional Block Diagrams  Chip level ESD: HBM: ±8kV VDD1 1  High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity  Default output high level or low level option 16 VDD2 VDD1 1 16 VDD2 INA 2 15 OUTA INA 2 15 OUTA INB 3 14 OUTB INB 3 14 OUTB INC 4 13 OUTC INC 4 13 OUTC IND 5 12 OUTD IND 5 12 OUTD INE 6 11 OUTE INE 6 INF 7 10 OUTF OUTF 11 OUTE 10 INF 7 GND2 GND1 8 VDD1 1 16 VDD2 VDD1 1 16 VDD2  Low propagation delay: 60 years  Low power consumption: 1.5mA/ch (1 Mbps)  RoHS-compliant packages: SOP16(300mil) SSOP16 Copyright © 2021, NOVOSENSE GND1 8 7 GND1 8 NSI8260 9 NSI8262 9 GND2 NSI8261 9 12 IND 7 GND1 8 GND2 NSI8263 9 GND2 Figure 1. NSi826x Block Diagram Page 1 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Index 1. PIN CONFIGURATION AND FUNCTIONS ........................................................................................................................ 3 2. ABSOLUTE MAXIMUM RATINGS ...................................................................................................................................... 4 3. RECOMMENDED OPERATING CONDITIONS ................................................................................................................ 5 4. THERMAL CHARACTERISTICS ........................................................................................................................................ 5 5. SPECIFICATIONS ................................................................................................................................................................... 6 ELECTRICAL CHARACTERISTICS ....................................................................................................................................... 6 SUPPLY CURRENT CHARACTERISTICS – 5V SUPPLY .......................................................................................................... 6 SUPPLY CURRENT CHARACTERISTICS –3.3V SUPPLY........................................................................................................ 8 SUPPLY CURRENT CHARACTERISTICS–2.5V SUPPLY ...................................................................................................... 10 SWITCHING CHARACTERISTICS - 5V SUPPLY .................................................................................................................. 11 SWITCHING CHARACTERISTICS - 3.3V SUPPLY ............................................................................................................... 12 SWITCHING CHARACTERISTICS - 2.5V SUPPLY ............................................................................................................... 12 TYPICAL PERFORMANCE CHARACTERISTICS .................................................................................................................. 13 PARAMETER MEASUREMENT INFORMATION ................................................................................................................... 14 6. HIGH VOLTAGE FEATURE DESCRIPTION ................................................................................................................... 15 INSULATION AND SAFETY RELATED SPECIFICATIONS ...................................................................................................... 15 SAFETY-LIMITING VALUES ............................................................................................................................................ 16 REGULATORY INFORMATION ........................................................................................................................................... 18 7. FUNCTION DESCRIPTION ................................................................................................................................................ 19 OVERVIEW ...................................................................................................................................................................... 19 OOK MODULATION ........................................................................................................................................................ 20 8. APPLICATION NOTE ........................................................................................................................................................... 21 TYPICAL APPLICATION CIRCUIT ..................................................................................................................................... 21 PCB LAYOUT.................................................................................................................................................................. 21 HIGH SPEED PERFORMANCE ........................................................................................................................................... 22 TYPICAL SUPPLY CURRENT EQUATIONS ......................................................................................................................... 22 9. PACKAGE INFORMATION ................................................................................................................................................ 23 10. ORDER INFORMATION .................................................................................................................................................... 25 11. DOCUMENTATION SUPPORT ......................................................................................................................................... 26 12. TAPE AND REEL INFORMATION ................................................................................................................................... 27 13. REVISION HISTORY ......................................................................................................................................................... 30 Copyright © 2021, NOVOSENSE Page 2 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 1. Pin Configuration and Functions VDD1 1 16 VDD2 VDD1 1 16 VDD2 INA 2 15 OUTA INA 2 15 OUTA INB 3 14 OUTB INB 3 14 OUTB INC 4 13 OUTC INC 4 13 OUTC IND 5 12 OUTD IND 5 12 OUTD INE 6 11 OUTE INE 6 11 OUTE INF 7 10 OUTF OUTF 7 GND1 8 NSI8260 9 GND2 GND1 8 Figure 1.1 NSi8260 Package 10 INF NSI8261 9 GND2 Figure 1.2 NSi8261 Package VDD1 1 16 VDD2 VDD1 1 16 VDD2 INA 2 15 OUTA INA 2 15 OUTA INB 3 14 OUTB INB 3 14 OUTB INC 4 13 OUTC INC 4 13 OUTC IND 5 12 OUTD OUTD 5 12 IND OUTE 6 11 INE OUTE 6 11 INE OUTF 7 10 INF OUTF 7 10 INF GND1 8 NSI8262 9 GND2 Figure 1.3 NSi8262 Package GND1 8 NSI8263 9 GND2 Figure 1.4 NSi8263 Package Table 1.1 NSi8260/ NSi8261/ NSi8262 Pin Configuration and Description NSi8260 PIN NO. NSi8261 PIN NO. NSi8262 PIN NO. NSi8263 PIN NO. SYMBOL FUNCTION 1 1 1 1 VDD1 Power Supply for Isolator Side 1 2 2 2 2 INA Logic Input A 3 3 3 3 INB Logic Input B 4 4 4 4 INC Logic Input C 5 5 5 12 IND Logic Input D 6 6 11 11 INE Logic Input E 7 10 10 10 INF Logic Input F 8 8 8 8 GND1 Ground 1, the ground reference for Isolator Side 1 9 9 9 9 GND2 Ground 2, the ground reference for Isolator Side 2 10 7 7 7 OUTF Logic Output F Copyright © 2021, NOVOSENSE Page 3 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 NSi8260 PIN NO. NSi8261 PIN NO. NSi8262 PIN NO. NSi8263 PIN NO. SYMBOL FUNCTION 11 11 6 6 OUTE Logic Output E 12 12 12 5 OUTD Logic Output D 13 13 13 13 OUTC Logic Output C 14 14 14 14 OUTB Logic Output B 15 15 15 15 OUTA Logic Output A 16 16 16 16 VDD2 Power Supply for Isolator Side 2 2. Absolute Maximum Ratings Parameters Power Supply Voltage Maximum Input Voltage Maximum Output Voltage Maximum Input/Output Pulse Voltage Output current Symbol Min Typ Max Unit VDD1, VDD2 -0.5 6.5 V VINA, VINB, VINC, VIND, VINE, VINF -0.4 VDD+0.4 V VOUTA, VOUTB, VOUTC, VOUTD, VOUTE, VOUTF -0.4 VDD+0.4 V ALL I/O Pin -0.8 VDD+0.8 V Io -15 15 mA 6.25 kV Maximum Surge Isolation Voltage VIOSM Operating Temperature Topr -55 125 ℃ Storage Temperature Tstg -55 150 ℃ HBM ±8000 V CDM ±2000 V Comments Pulse width should be less than 100ns, and the duty cycle should be less than 10% Electrostatic discharge Copyright © 2021, NOVOSENSE Page 4 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 3. Recommended Operating Conditions Parameters Symbol min Power Supply Voltage VDD1, VDD2 Operating Temperature typ max unit 2.5 5.5 V Topr -55 125 ℃ High Level Input Voltage VIH 2 Low Level Input Voltage VIL 0.8 V Data rate DR 150 Mbps V 4. Thermal Characteristics Parameters IC Junction-to-Air Thermal Resistance Junction-to-case (top) thermal resistance Junction-to-board thermal resistance Copyright © 2021, NOVOSENSE Symbol SOP16(300mil) SSOP16 Unit θJA 60.3 86.5 °C/W θJC（top） 24.0 26.9 °C/W θJB 29.3 36.6 °C/W Page 5 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 5. Specifications Electrical Characteristics (VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Power on Reset VDDPOR Input Threshold Min Typ Unit Comments 2.2 V POR threshold as during powerup VDD HYS 0.1 V POR threshold Hysteresis VIT 1.6 V Input Threshold at rising edge VIT_HYS 0.4 V Input Threshold Hysteresis High Level Input Voltage VIH Low Level Input Voltage VIL High Level Output Voltage VOH Low Level Output Voltage VOL Output Impedance Rout 50 Input Pull high or low Current Ipull 8 Start Up Time after POR trbs 10 Common Mode Transient Immunity CMTI Max 2 V 0.8 VDD0.4 0.4 ±200 V V IOH =- 4mA V IOL = 4mA ohm 15 µA µs ±250 kV/µs See Figure 5.12 , CL = 15pF Supply Current Characteristics – 5V Supply (VDD1=5V± 10%, VDD2=5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments IDD1(Q0) 1.39 3.09 mA IDD2(Q0) 3.41 5.63 mA All Input 0V for NSi8260x0 Or All Input at supply for NSi8260x1 IDD1(Q1) 7.37 12.16 mA All Input at supply for NSi8260x0 IDD2(Q1) 3.49 5.76 mA Or All Input 0V for NSi8260x1 IDD1(1M) 4.39 7.24 mA All Input with 1Mbps, IDD2(1M) 3.67 6.06 mA CL=15pF NSi8260 Supply current Copyright © 2021, NOVOSENSE Page 6 NSi8260/NSi8261/NSi8262/NSi8263 Parameters Symbol Min Datasheet (EN) 1.3 Typ Max Unit Comments IDD1(10M) 4.71 7.77 mA All Input with 10Mbps, IDD2(10M) 5.66 9.34 mA CL=15pF IDD1(100M) 7.47 14.94 mA All Input with 100Mbps, IDD2(100M) 23.8 55.22 mA CL=15pF IDD1(Q0) 1.73 2.85 mA IDD2(Q0) 3.07 5.07 mA All Input 0V for NSi8261x0 Or All Input at supply for NSi8261x1 IDD1(Q1) 6.72 11.09 mA All Input at supply for NSi8261x0 IDD2(Q1) 4.14 6.83 mA Or All Input 0V for NSi8261x1 IDD1(1M) 4.27 7.05 mA All Input with 1Mbps, IDD2(1M) 3.79 6.25 mA CL=15pF IDD1(10M) 4.87 8.03 mA All Input with 10Mbps, IDD2(10M) 5.50 9.08 mA CL=15pF IDD1(100M) 10.19 20.38 mA All Input with 100Mbps, IDD2(100M) 21.08 47.21 mA CL = 15pF IDD1(Q0) 2.06 3.40 mA IDD2(Q0) 2.74 4.52 mA All Input 0V for NSi8262x0 Or All Input at supply for NSi8262x1 IDD1(Q1) 6.08 10.03 mA All Input at supply for NSi8262x0 IDD2(Q1) 4.78 7.89 mA Or All Input 0V for NSi8262x1 IDD1(1M) 4.15 6.85 mA All Input with 1Mbps, IDD2(1M) 3.91 6.45 mA CL=15pF IDD1(10M) 5.03 8.29 mA All Input with 10Mbps, IDD2(10M) 5.34 8.82 mA CL=15pF IDD1(100M) 12.91 25.83 mA All Input with 100Mbps, IDD2(100M) 18.36 39.2 mA CL = 15pF IDD1(Q0) 2.40 3.96 mA IDD2(Q0) 2.40 3.96 mA All Input 0V for NSi8263x0 Or All Input at supply for NSi8263x1 NSi8261 NSi8262 NSi8263 Copyright © 2021, NOVOSENSE Page 7 NSi8260/NSi8261/NSi8262/NSi8263 Parameters Symbol Min Datasheet (EN) 1.3 Typ Max Unit Comments IDD1(Q1) 5.43 8.96 mA All Input at supply for NSi8263x0 IDD2(Q1) 5.43 8.96 mA Or All Input 0V for NSi8263x1 IDD1(1M) 4.03 6.65 mA All Input with 1Mbps, IDD2(1M) 4.03 6.65 mA CL=15pF IDD1(10M) 5.19 8.56 mA All Input with 10Mbps, IDD2(10M) 5.19 8.56 mA CL=15pF IDD1(100M) 15.64 31.27 mA All Input with 100Mbps, IDD2(100M) 15.64 31.27 mA CL = 15pF Supply Current Characteristics –3.3V Supply (VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments IDD1(Q0) 1.33 3.00 mA IDD2(Q0) 3.36 5.54 mA All Input 0V for NSi8260x0 Or All Input at supply for NSi8260x1 IDD1(Q1) 7.26 11.98 mA All Input at supply for NSi8260x0 IDD2(Q1) 3.43 5.66 mA Or All Input 0V for NSi8260x1 IDD1(1M) 4.31 7.11 mA All Input with 1Mbps, IDD2(1M) 3.55 5.86 mA CL=15pF IDD1(10M) 4.5 7.43 mA All Input with 10Mbps, IDD2(10M) 4.87 8.04 mA CL=15pF IDD1(100M) 6.15 12.30 mA All Input with 100Mbps, IDD2(100M) 18.89 37.78 mA CL=15pF IDD1(Q0) 1.67 2.75 mA IDD2(Q0) 3.02 4.99 mA All Input 0V for NSi8261x0 Or All Input at supply for NSi8261x1 IDD1(Q1) 6.62 10.93 mA All Input at supply for NSi8261x0 IDD2(Q1) 4.07 6.71 mA Or All Input 0V for NSi8261x1 NSi8260 Supply current NSi8261 Copyright © 2021, NOVOSENSE Page 8 NSi8260/NSi8261/NSi8262/NSi8263 Parameters Symbol Min Datasheet (EN) 1.3 Typ Max Unit Comments IDD1(1M) 4.18 6.90 mA All Input with 1Mbps, IDD2(1M) 3.68 6.07 mA CL=15pF IDD1(10M) 4.56 7.53 mA All Input with 10Mbps, IDD2(10M) 4.81 7.93 mA CL=15pF IDD1(100M) 8.27 16.55 mA All Input with 100Mbps, IDD2(100M) 16.77 33.53 mA CL = 15pF IDD1(Q0) 2.01 3.31 mA IDD2(Q0) 2.68 4.43 mA All Input 0V for NSi8261x0 Or All Input at supply for NSi8261x1 IDD1(Q1) 5.98 9.87 mA All Input at supply for NSi8261x0 IDD2(Q1) 4.71 7.77 mA Or All Input 0V for NSi8261x1 IDD1(1M) 4.06 6.69 mA All Input with 1Mbps, IDD2(1M) 3.80 6.28 mA CL=15pF IDD1(10M) 4.62 7.63 mA All Input with 10Mbps, IDD2(10M) 4.75 7.83 mA CL=15pF IDD1(100M) 10.40 20.79 mA All Input with 100Mbps, IDD2(100M) 14.64 29.29 mA CL = 15pF IDD1(Q0) 2.35 3.87 mA IDD2(Q0) 2.35 3.87 mA All Input 0V for NSi8262x0 Or All Input at supply for NSi8262x1 IDD1(Q1) 5.35 8.82 mA All Input at supply for NSi8262x0 IDD2(Q1) 5.35 8.82 mA Or All Input 0V for NSi8262x1 IDD1(1M) 3.93 6.48 mA All Input with 1Mbps, IDD2(1M) 3.93 6.48 mA CL=15pF IDD1(10M) 4.69 7.73 mA All Input with 10Mbps, IDD2(10M) 4.69 7.73 mA CL=15pF IDD1(100M) 12.52 25.04 mA All Input with 100Mbps, IDD2(100M) 12.52 25.04 mA CL = 15pF NSi8262 NSi8263 Copyright © 2021, NOVOSENSE Page 9 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Supply Current Characteristics–2.5V Supply (VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments IDD1(Q0) 1.29 2.94 mA IDD2(Q0) 3.33 5.49 mA All Input 0V for NSi8260x0 Or All Input at supply for NSi8260x1 IDD1(Q1) 7 11.55 mA All Input at supply for NSi8260x0 IDD2(Q1) 3.39 5.59 mA Or All Input 0V for NSi8260x1 IDD1(1M) 4.17 6.88 mA All Input with 1Mbps, IDD2(1M) 3.47 5.73 mA CL=15pF IDD1(10M) 4.29 7.08 mA All Input with 10Mbps, IDD2(10M) 4.48 7.39 mA CL=15pF IDD1(100M) 5.27 10.54 mA All Input with 100Mbps, IDD2(100M) 15.33 30.66 mA CL=15pF IDD1(Q0) 1.63 2.69 mA IDD2(Q0) 2.99 4.93 mA All Input 0V for NSi8261x0 Or All Input at supply for NSi8261x1 IDD1(Q1) 6.40 10.56 mA All Input at supply for NSi8261x0 IDD2(Q1) 3.99 6.59 mA Or All Input 0V for NSi8261x1 IDD1(1M) 4.05 6.69 mA All Input with 1Mbps, IDD2(1M) 3.59 5.92 mA CL=15pF IDD1(10M) 4.32 7.13 mA All Input with 10Mbps, IDD2(10M) 4.45 7.34 mA CL=15pF IDD1(100M) 6.95 13.89 mA All Input with 100Mbps, IDD2(100M) 13.65 27.31 mA CL = 15pF IDD1(Q0) 1.97 3.25 mA IDD2(Q0) 2.65 4.37 mA All Input 0V for NSi8261x0 Or All Input at supply for NSi8261x1 IDD1(Q1) 5.80 9.56 mA NSi8260 NSi8261 Supply current NSi8262 Copyright © 2021, NOVOSENSE All Input at supply for NSi8261x0 Page 10 NSi8260/NSi8261/NSi8262/NSi8263 Parameters Symbol Min Datasheet (EN) 1.3 Typ Max Unit Comments IDD2(Q1) 4.59 7.58 mA Or All Input 0V for NSi8261x1 IDD1(1M) 3.94 6.50 mA All Input with 1Mbps, IDD2(1M) 3.70 6.11 mA CL=15pF IDD1(10M) 4.35 7.18 mA All Input with 10Mbps, IDD2(10M) 4.42 7.29 mA CL=15pF IDD1(100M) 8.62 17.25 mA All Input with 100Mbps, IDD2(100M) 11.98 23.95 mA CL = 15pF IDD1(Q0) 2.31 3.81 mA IDD2(Q0) 2.31 3.81 mA All Input 0V for NSi8262x0 Or All Input at supply for NSi8262x1 IDD1(Q1) 5.20 8.57 mA All Input at supply for NSi8262x0 IDD2(Q1) 5.20 8.57 mA Or All Input 0V for NSi8262x1 IDD1(1M) 3.82 6.30 mA All Input with 1Mbps, IDD2(1M) 3.82 6.30 mA CL=15pF IDD1(10M) 4.39 7.24 mA All Input with 10Mbps, IDD2(10M) 4.39 7.24 mA CL=15pF IDD1(100M) 10.30 20.60 mA All Input with 100Mbps, IDD2(100M) 10.30 20.60 mA CL = 15pF NSi8263 Switching Characteristics - 5V Supply (VDD1=5V± 10%, VDD2=5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Min Data Rate DR 0 Minimum Pulse Width PW Propagation Delay t PLH 2.5 t PHL 2.5 Pulse Width Distortion Typ Max Unit Comments 150 Mbps 5.0 ns 6.54 15 ns See Figure 5.11 , CL = 15pF 8.30 15 ns See Figure 5.11 , CL = 15pF PWD 5.0 ns See Figure 5.11 , CL = 15pF tr 5.0 ns See Figure 5.11 , CL = 15pF |t PHL – t PLH | Rising Time Copyright © 2021, NOVOSENSE Page 11 NSi8260/NSi8261/NSi8262/NSi8263 Parameters Symbol Falling Time tf Min Typ Datasheet (EN) 1.3 Max Unit Comments 5.0 ns See Figure 5.11 , CL = 15pF Peak Eye Diagram Jitter tJIT(PK) 350 ps Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns Part-to-Part Delay Skew tSK(p2p) 5.0 ns Switching Characteristics - 3.3V Supply (VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta = 25℃) Parameters Symbol Min Data Rate DR 0 Minimum Pulse Width PW Propagation Delay t PLH 2.5 t PHL 2.5 Max Unit 150 Mbps 5.0 ns 7.5 15 ns See Figure 5.11 , CL = 15pF 8.7 15 ns See Figure 5.11 , CL = 15pF PWD 5.0 ns See Figure 5.11 , CL = 15pF Rising Time tr 5.0 ns See Figure 5.11 , CL = 15pF Falling Time tf 5.0 ns See Figure 5.11 , CL = 15pF Pulse Width Distortion Typ Comments |t PHL – t PLH | Peak Eye Diagram Jitter tJIT(PK) 350 ps Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns Part-to-Part Delay Skew tSK(p2p) 5.0 ns Switching Characteristics - 2.5V Supply (VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-55℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta = 25℃) Parameters Symbol Min Data Rate DR 0 Minimum Pulse Width PW Propagation Delay t PLH Copyright © 2021, NOVOSENSE 2.5 Typ 9.0 Max Unit 150 Mbps 5.0 ns 15 ns Comments See Figure 5.11 , CL = 15pF Page 12 NSi8260/NSi8261/NSi8262/NSi8263 Parameters Datasheet (EN) 1.3 Unit Comments 15 ns See Figure 5.11 , CL = 15pF PWD 5.0 ns See Figure 5.11 , CL = 15pF Rising Time tr 5.0 ns See Figure 5.11 , CL = 15pF Falling Time tf 5.0 ns See Figure 5.11 , CL = 15pF Pulse Width Distortion Symbol Min Typ Max t PHL 2.5 9.3 |t PHL – t PLH | Peak Eye Diagram Jitter tJIT(PK) 350 ps Channel-to-Channel Delay Skew tSK(c2c) 2.5 ns Part-to-Part Delay Skew tSK(p2p) 5.0 ns 10 5 2.5V 3.3V 5V 0 0 50 100 150 Supply Current(mA) Supply Current(mA) Typical Performance Characteristics 40 30 20 2.5V 3.3V 5V 10 0 200 0 50 Data Rate (Mbps) 15 10 2.5V 3.3V 5V 0 0 50 100 150 30 20 2.5V 3.3V 5V 10 0 200 0 50 15 10 2.5V 3.3V 5V 50 100 150 200 Data Rate (Mbps) Figure 5.5 NSi8262 VDD1 Supply Current vs Data Rate Copyright © 2021, NOVOSENSE 150 200 Figure 5.4 NSi8261 VDD2 Supply Current vs Data Rate Supply Current(mA) Supply Current(mA) 20 0 100 Data Rate (Mbps) Figure 5.3 NSi8261 VDD1 Supply Current vs Data Rate 0 200 40 Data Rate (Mbps) 5 150 Figure 5.2 NSi8260 VDD2 Supply Current vs Data Rate Supply Current(mA) Supply Current(mA) Figure 5.1 NSi8260 VDD1 Supply Current vs Data Rate 5 100 Data Rate (Mbps) 30 20 2.5V 3.3V 5V 10 0 0 50 100 150 200 Data Rate (Mbps) Figure 5.6 NSi8262 VDD2 Supply Current vs Data Rate Page 13 30 20 2.5V 3.3V 5V 10 0 0 50 100 150 Datasheet (EN) 1.3 Supply Current(mA) Supply Current(mA) NSi8260/NSi8261/NSi8262/NSi8263 30 20 2.5V 3.3V 5V 10 0 200 0 50 Data Rate (Mbps) Figure 5.7 NSi8263 VDD1 Supply Current vs Data Rate 150 200 Figure 5.8 NSi8263 VDD2 Supply Current vs Data Rate 12 10 Prooagation Delay(ns) Prooagation Delay(ns) 100 Data Rate (Mbps) 10 8 6 4 2.5 3.3 5 2 0 -40 10 60 110 8 6 4 2.5 3.3 5 2 0 -40 160 10 Temperature(°C) 60 110 160 Temperature(°C) Figure 5.9 Rising Edge Propagation Delay Vs Temp Figure 5.10 Falling Edge Propagation Delay Vs Temp Parameter Measurement Information Input Generator VI VO 50Ω CL Figure 5.11 Switching Characteristics Test Circuit and Waveform VDD1 VDD2 IN OUT VO Battery DC CL GND2 GND1 VCM Figure 5.12 Common-Mode Transient Immunity Test Circuit Copyright © 2021, NOVOSENSE Page 14 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 6. High Voltage Feature Description Insulation and Safety Related Specifications Description Test Condition Symbol Value SSOP16 Unit SOP16 (300mil) Min. External Air Gap (Clearance) CLR 3.9 8 mm Min. External Tracking (Creepage) CPG 3.9 8 mm Distance through the Insulation DTI Comparative Tracking Index DIN EN 60112 (VDE 0303-11) Material Group IEC 60112 CTI 32 um >400 >600 II I For Rated Mains Voltage ≤ 150Vrms I to III I to IV For Rated Mains Voltage ≤ 300Vrms I to II I to IV For Rated Mains Voltage ≤ 600Vrms I I to IV For Rated Mains Voltage ≤ 1000Vrms / I to III V Installation Classification per DIN VDE 0110 Insulation Specification per DIN VDE V 0884-11:2017-011) Climatic Category 40/125/21 Pollution Degree per DIN VDE 0110, Table 1 Maximum Working Isolation Voltage AC voltage 2 VIOWM 400 1500 VRMS 565 2121 VDC VIORM 565 2121 Vpeak Vpd (m) 847 / Vpeak Vpd (m) / 3977 Vpeak V pd (m) 678 / Vpeak V pd (m) / 3394 Vpeak DC voltage Maximum Voltage Repetitive Isolation Input to Output Test Voltage, Method B1 Vini. b = VIOTM, Vpd(m) = VIORM × 1.5, tini = tm = 1 sec, qpd ≤ 5 pC, 100% production test Vini. b = VIOTM, Vpd(m) = VIORM × 1.875, tini = tm =1 sec, qpd≤ 5 pC, 100% production test Input to Output Test Voltage, Method A. After Environmental Tests Subgroup 1 Vini. a = VIOTM, Vpd(m) = VIORM × 1.3, tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC Vini. a = VIOTM, Vpd(m) = VIORM × 1.6, tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC Copyright © 2021, NOVOSENSE Page 15 NSi8260/NSi8261/NSi8262/NSi8263 Description Test Condition Input to Output Test Voltage, Method A. After Input and Output Safety Test Subgroup 2 and Subgroup 3 Vini. a = VIOTM, Vpd(m) = VIORM × 1.2, Maximum Transient Isolation Voltage Maximum Surge Isolation Voltage Datasheet (EN) 1.3 Symbol Value Unit V pd (m) 678 2545 Vpeak t = 60 sec VIOTM 5000 8000 Vpeak Test method per IEC62368-1, VIOSM 5384 / Vpeak / 6250 Vpeak tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC 1.2/50us waveform, VTEST = 1.3 × VIOSM Test method per IEC62368-1, 1.2/50us waveform, VTEST = 1.6 × VIOSM Isolation Resistance VIO = 500 V, Tamb = TS RIO VIO = 500 V, 100 °C ≤ Tamb ≤ 125 °C Isolation Capacitance f = 1MHz CIO VTEST = 1.2 × VISO, t = 1 sec, VISO >109 Ω >1011 Ω 1.2 pF Insulation Specification per UL1577 Withstand Isolation Voltage 3000 5000 Vrms 100% production test 1) This coupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Safety-Limiting Values Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSI826x-DSWR Description Test Condition Value Unit Safety Supply Power RθJA = 60.3 °C/W, TJ = 150 °C, TA = 25 °C 2073 mW Safety Supply Current RθJA = 60.3 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C 414 mA 150 °C Safety Temperature2) 1) Calculate with the junction-to-air thermal resistance, RθJA, of SOP16(300mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. Copyright © 2021, NOVOSENSE Page 16 Datasheet (EN) 1.3 2500 2000 1500 1000 500 0 0 50 100 150 200 900 800 700 600 500 400 300 200 100 0 Safety Limiting Current per Channel (mA) Safety Limiting Power (mW) NSi8260/NSi8261/NSi8262/NSi8263 5V 3.3V 2.5V 0 Ambient Temperature (°C) 50 100 150 200 Ambient Temperature (°C) Figure 6.1 NSI826x-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Basic isolation safety-limiting values as outlined in VDE-0884-11 of NSI826x-DSSR Description Test Condition Value Unit Safety Supply Power RθJA =86.5 °C/W, TJ = 150 °C, TA = 25 °C 1445 mW Safety Supply Current RθJA = 86.5 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C 289 mA 150 °C Safety Temperature2) Calculate with the junction-to-air thermal resistance, RθJA, of SSOP16 package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 4) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. 1600 700 1400 1200 1000 800 600 Safety Limiting Current per Channel (mA) Safety Limiting Power (mW) 3) 600 5V 500 3.3V 400 2.5V 300 400 200 200 100 0 0 50 100 150 Ambient Temperature (°C) 200 0 0 50 100 150 200 Ambient Temperature (°C) Figure 6.2 NSI826x-DSSR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2021, NOVOSENSE Page 17 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Regulatory Information The NSi826xW-DSWR are approved or pending approval by the organizations listed in table. CUL UL 1577 Component Recognition Program1 VDE Approved under CSA Component Acceptance Notice 5A Single Protection, 5000Vrms Isolation voltage File (UL-US-L500602-11-618081021) Single Protection, 5000Vrms Isolation voltage File (UL-US-L500602-1161808102-1) CQC DIN VDE V 088411(VDE V 088411):2017-012 Certified by CQC11471543-2012 Reinforce Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation File (5024579-48800002 / 276211) File (CQC20001264939) GB4943.1-2011 The NSi826xS-DSSR are approved or pending approval by the organizations listed in table. CUL UL 1577 Component Recognition Program1 Single Protection, 3000Vrms Isolation voltage File (UL-US-L500602-11-618081021) Copyright © 2021, NOVOSENSE VDE Approved under CSA Component Acceptance Notice 5A Single Protection, 3000Vrms Isolation voltage File (UL-US-L500602-1161808102-1) DIN VDE V 088411(VDE V 088411):2017-012 Basic Insulation 565Vpeak, VIOSM=5384Vpeak File (pending) CQC Certified by CQC11471543-2012 GB4943.1-2011 Basic insulation File (CQC19001233128) Page 18 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 7. Function Description Overview The NSi826x is a Six-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and demodulated at the Receiver side. The NSi826x devices are high reliability quad-channel digital isolator. The NSi826x device is safety certified by UL1577 support 5kVrms insulation withstand voltages, while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi826x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. The NSi826x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi826x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. The NSi826x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 7.1, which helps for diagnosis when power is missing at the transmitter side. The output B follows the same status with the input A after powering up. Table 7.1 Output status vs. power status Input VDD1 status VDD2 status Output Comment H Ready Ready H Normal operation. L Ready Ready L X Unready Ready L(NSi826xW0) H(NSi826xW1) X Ready Unready X The output follows the same status with the input after input side VDD is powered on. The output follows the same status with the input after output side VDD2 is powered on. Note: H=Logic high; L=Logic low; X=Logic low or logic high VDD1 is input side power; VDD2 is out side power. Copyright © 2021, NOVOSENSE Page 19 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 OOK Modulation NSi8266 is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal oscillator at the transmitter side, as shown in Figure 7.1 to Figure 7.2, then it is transferred through the capacitive isolation barrier and demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI. Isolation barrier VIN PWM TX signal conditioning RX signal conditioning envelope detection VOUT EN OSC Figure 7.1 Single Channel Function Block Diagram TX IN Signal through isolation barrier RX OUT Figure 7.2 OOK Modulation Copyright © 2021, NOVOSENSE Page 20 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 8. Application Note Typical Application Circuit 隔离电源 VIN=5V/3.3V VOUT=5V/3.3V VDD2 VDD1 100nF PWM1 PWM2 VDD 1 2 AH_IN AH_OUT 15 3 AL_IN AL_OUT 14 4 BH_IN BH_OUT 13 5 BL_IN BL_OUT 12 6 CH_IN CH_OUT 11 7 CL_IN CL_OUT 10 8 GND 1 VDD 2 PWM3 MCU 16 1 PWM4 100nF PWM_AH PWM_AL PWM_BH PWM_BL IPM PWM_CH PWM5 PWM6 GND 2 PWM_CL 9 NSi8260W0 Figure 8.1 Typical PWM isolation circuit for IPM PCB Layout The NSi826x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the package. Figure 8.1 to Figure 8.2 show the recommended PCB layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up immunity. The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. Figure 8.1 Recommended PCB Layout — Top Layer Copyright © 2021, NOVOSENSE Figure 8.2 Recommended PCB Layout — Bottom Layer Page 21 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 High Speed Performance Typical Supply Current Equations The typical supply current of NSi826x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF NSi8260: IDD1 = 0.19 *a1+1.45*b1+0.82*c1. IDD2 = 1.36+ VDD1*f* CL *c1*10-9 When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1. NSi8261: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. NSi8262: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. NSi8263: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. Copyright © 2021, NOVOSENSE Page 22 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 9. Package Information Figure 9.1 SOP16(300mil) Package Shape and Dimension in millimeters Copyright © 2021, NOVOSENSE Page 23 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Figure 9.2 SOP16(300mil) Package Board Layout Example Figure 9.3 SSOP16 Package Shape and Dimension in millimeters Copyright © 2021, NOVOSENSE Page 24 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Figure 9.4 SSOP16 Package Board Layout Example 10. Order Information Part Number Isolation Rating (kV) 5 Number of side 1 inputs 6 Number of side 2 inputs 0 Max Data Rate (Mbps) 150 Default Output State Low Temperature MSL Package Type Package Drawing SPQ NSI8260W0 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8260W1 5 6 0 150 High 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8261W0 5 5 1 150 Low 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8261W1 5 5 1 150 High 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8262W0 5 4 2 150 Low 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8262W1 5 4 2 150 High 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8263W0 5 3 3 150 Low 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8263W1 5 3 3 150 High 2 SOP16 SOW16 1000 -55 to 125℃ -DSWR (300mil) NSI8260S03 6 0 150 Low 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8260S13 6 0 150 High 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8261S03 5 1 150 Low 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8261S13 5 1 150 High 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8262S03 4 2 150 Low 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8262S13 4 2 150 High 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8263S03 3 3 150 Low 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NSI8263S13 3 3 150 High 1 SSOP16 SSOP16 2500 -55 to 125℃ DSSR NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifications and peak solder temperatures. Copyright © 2021, NOVOSENSE Page 25 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Part Number Rule: NSi(82)(6)(1)(W)(1)-DSWR Package Type: SS=SSOP16 SW=SOW16(300mil) Series Number 6=6Channels Reverse Channel Amount: N=N Channels N=0,1,2 D = Industrial Q1 = Auto Package Type: S= SSOP W= WB Fail-Safe Output State: 0 = Logic Low 1 = Logic High 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSi826x Click here Click here Click here Click here Copyright © 2021, NOVOSENSE Page 26 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 12. Tape and Reel Information Figure 12.1 Reel Information (for all packages) Copyright © 2021, NOVOSENSE Page 27 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Direction of Feed 1 2 3 4 Quadrant Designations Figure 12.2 Tape Information of SOP16(300mil) Copyright © 2021, NOVOSENSE Page 28 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 Direction of Feed 1 2 3 4 Quadrant Designations Figure 12.3 Tape Information of SSOP16 Copyright © 2021, NOVOSENSE Page 29 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.3 13. Revision history Revision 1.0 1.1 1.2 1.3 Description Initial version Changed tape and reel information Updated Safety Regulatory Updated Safety-Limiting Values. Update SSOP16 Package Shape and Dimension in millimeters. Changed AEC-Q100 description. Copyright © 2021, NOVOSENSE Date 2020/11/13 2020/12/20 2021/6/28 2022/4/25 Page 30