MMBT9014C1

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Output Capacitance at VCB = 10 V, f = 1 MHz C C Symbol Min. Max. Unit hFE 200 300 - ICBO - 50 nA IEBO - 50 nA V(BR)CBO 50 - V V(BR)CEO 45 - V V(BR)EBO 5 - V VCE(sat) - 0.25 V VBE(sat) - 1 V fT 100 - MHz Cob - 6 pF ® Dated：20/09/2018 Rev：01 MMBT9014C1 ® Dated：20/09/2018 Rev：01 MMBT9014C1 PACKAGE OUTLINE Plastic surface mounted package (Dimensions in mm) TO-236 Recommended Soldering Footprint 2.4 1.0 0.8 1.0 0.8 1.9 Packing information Package TO-236 Pitch Tape Width Reel Size Per Reel Packing Quantity (mm) mm inch mm inch 8 4 ± 0.1 0.157 ± 0.004 178 7 3,000 ® Dated：20/09/2018 Rev：01