HSBG2103

HSBG2103 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSBG2103 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBG2103 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge Low Threshold High-Side Switching Advanced high cell density Trench technology VDS -20 V RDS(ON),typ 350 mΩ ID -0.65 A DFN1006 Pin Configurations D G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±10 V -0.65 A -2.6 A ID@TA=25℃ IDM Continuous Drain Current, VGS @ Pulsed Drain -4.5V1 Current2 3 PD@TA=25℃ Total Power Dissipation 0.15 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA www.hs-semi.cn Parameter Thermal Resistance Junction-Ambient Ver 2.0 1 Typ. Max. Unit --- 830 ℃/W 1 HSBG2103 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-0.65A --- 350 520 VGS=-2.5V , ID=-0.05A --- 500 700 -0.35 -0.65 -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=±10V , VDS=0V --- --- ±10 --- 8 --- --- 1.3 VGS=VDS , ID =-250uA IGSS Gate-Source Leakage Current Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.2 Turn-On Delay Time --- 9 --- Td(on) VDS=-10V , VGS=-4.5V , ID=-0.3A m uA uA nC Rise Time VDD=-10V , VGS=-4.5V , RG=3, --- 6 --- Turn-Off Delay Time ID=-0.2A --- 30 --- Fall Time --- 19 --- Ciss Input Capacitance --- 120 Coss Output Capacitance --- 20 Crss Reverse Transfer Capacitance --- 11 Min. Typ. Max. Unit --- --- -1.2 V Tr Td(off) Tf VDS=-16V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol VSD Parameter Diode Forward Voltage2 Conditions VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBG2103 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 3 HSBG2103 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSBG2103 P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSBG2103 www.hs-semi.cn Package code DFN1006 Ver 2.0 Packaging 10000/Tape&Reel 5