NSi822x
High Reliability
Dual-Channel Digital Isolators
Datasheet (EN) 1.6
Product Overview
The NSi822x devices are high reliability dual-channel
digital isolators. The NSi822x device is safety certified by
UL1577 support several insulation withstand voltages
(3.75kVrms, 5kVrms, 8kVrms), while providing high
electromagnetic immunity and low emissions at low
power consumption. The data rate of the NSi822x is up
to 150Mbps, and the common-mode transient immunity
(CMTI) is up to 250kV/us. The NSi822x device provides
digital channel direction configuration and the default
output level configuration when the input power is lost.
Wide supply voltage of the NSi822x device support to
connect with most digital interface directly, easy to do
the level shift. High system level EMC performance
enhance reliability and stability of use.
CQC certification per GB4943.1-2011
CSA component notice 5A
DIN VDE V 0884-11:2017-01
Applications
Industrial automation system
Isolated SPI, RS232, RS485
General-purpose multichannel isolation
Motor control
Device Information
Part Number
NSi822xNx-DSPR
Package
SOP8
Body Size
4.90mm × 3.90mm
NSi822xWx-DSWVR
SOW8
5.85mm × 7.50mm
Up to 5000Vrms Insulation voltage
NSi822xWx-DSWR
SOW16
10.30mm × 7.50mm
Date rate: DC to 150Mbps
NSi822xWx-DSWWR
SOWW16
10.52mm × 14.0mm
Power supply voltage: 2.5V to 5.5V
Functional Block Diagrams
Key Features
High CMTI: 250kV/us
Chip level ESD: HBM: ±8kV
Robust EMC Reinforced Dual-Channel Digital Isolators
for SOW8 wide body and SOW16 wide body
Default output high level or low level option
Figure 1. NSi822xN Block Diagram
Isolation surge voltage: >10kV
Low power consumption: 1.5mA/ch (1 Mbps)
Low propagation delay: 400
>600
>600
>600
Ⅱ
Ⅰ
Ⅰ
Ⅰ
For Rated Mains Voltage ≤ 150Vrms
Ⅰto Ⅳ
Ⅰto Ⅳ
Ⅰto Ⅳ
Ⅰto Ⅳ
For Rated Mains Voltage ≤ 300Vrms
Ⅰto Ⅲ
Ⅰto Ⅳ
Ⅰto Ⅳ
Ⅰto Ⅳ
For Rated Mains Voltage ≤ 600Vrms
Ⅰto Ⅱ
Ⅰto Ⅳ
Ⅰto Ⅳ
Ⅰto Ⅳ
For Rated Mains Voltage ≤ 1000Vrms
Ⅰ
Ⅰto Ⅲ
Ⅰto Ⅲ
Ⅰto Ⅲ
10/105/21
10/105/21
10/105/21
10/105/21
2
2
2
2
VIORM
565
2121
2121
2121
Vpeak
VIOWM
400
1500
1500
1500
VRMS
565
2121
2121
2121
VDC
847
/
/
/
Vpeak
/
3977
3977
3977
678
/
/
/
Material Group
CTI
28
IEC 60112
V
Installation Classification per DIN VDE 0110
Climatic Classification
Pollution Degree per DIN VDE 0110,
Table 1
Maximum repetitive isolation voltage
Maximum Working Isolation Voltage
AC voltage
DC voltage
Input to Output Test Voltage, Method
B1
VIORM × 1.5 = Vpd(m),
V pd (m)
100% production test,
tini = tm = 1 sec, qpd < 5 pC
VIORM × 1.875 = Vpd(m),
100% production test,
tini = tm = 1 sec, qpd < 5 pC
Input to Output Test Voltage, Method A
After Environmental Tests Subgroup 1
VIORM × 1.3=Vpd (m), tini = 60
sec, tm=10 sec, qpd < 5 pC
Copyright © 2022, NOVOSENSE
V pd (m)
Page 18
Vpeak
NSi8220/NSi8221/NSi8222
Description
Test Condition
Datasheet (EN) 1.6
Symbol
VIORM × 1.6=Vpd (m), tini = 60
sec, tm=10 sec, qpd < 5 pC
After Input and /or Safety Test
Subgroup 2 and Subgroup 3
Unit
/
3394
3394
3394
V pd (m)
678
2545
2545
2545
Vpeak
t = 60 sec
VIOTM
5300
8000
8000
12000
Vpeak
Test method per
IEC60065,1.2/50us
waveform,
VTEST=VIOSM×1.3
VIOSM
5384
V IORM × 1.2= V pd (m) , t ini = 60
sec, t m = 10 sec, partial
discharge < 5 pC
Maximum transient isolation voltage
Maximum Surge Isolation Voltage
Value
Test method per
IEC60065,1.2/50us
waveform,
VTEST=VIOSM×1.6
Vpeak
6250
6250
6250
Vpeak
>109
>109
>109
>109
Ω
>1011
>1011
>1011
>1011
Ω
CIO
0.6
0.6
0.6
0.6
pF
Input capacitance
CI
2
2
2
2
pF
Case Temperature
Ts
150
150
150
150
℃
VISO
3750
5000
5000
8000
VRMS
Isolation resistance
VIO =500V at Tamb=TS
RIO
VIO =500V
at 100℃≤Tamb≤125℃
Isolation capacitance
f = 1MHz
Insulation Specification per UL1577
Withstand Isolation Voltage
VTEST = 1.2 × VISO, t = 1 sec,
100% production test
1)
This coupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall
be ensured by means of suitable protective circuits.
6.2. Safety-Limiting Values
Basic isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xN-DSPR SOP8(150mil)
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA = 137.7 ℃/W, T J = 150 ℃, T A = 25 ℃
908
mW
Safety Supply Current
RθJA = 137.7 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃
165
mA
150
°C
Safety Temperature2)
1)
Calculate with the junction-to-air thermal resistance, RθJA, of SOP8(150mil) package (Thermal Information Table) which is
that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
2)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Copyright © 2022, NOVOSENSE
Page 19
Safety Limiting Power (mW)
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
1000
900
800
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.1 NSi822xN-DSPR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xW-DSWVR SOW8(300mil)
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA = 84.3 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃
1483
mW
Safety Supply Current
RθJA = 84.3 ℃/W, T J = 150 ℃, T A = 25 ℃
269.6
mA
150
°C
Safety Temperature2)
Calculate with the junction-to-air thermal resistance, RθJA, of SOW8(300mil) package (Thermal Information Table) which is
that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
2)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Safety Limiting Power (mW)
1)
1600
1400
1200
1000
800
600
400
200
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.2 NSi822xW-DSWVR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xW-DSWR SOW16(300mil)
Copyright © 2022, NOVOSENSE
Page 20
NSi8220/NSi8221/NSi8222
Description
Datasheet (EN) 1.6
Test Condition
Value
Unit
Safety Supply Power
RθJA = 86.5 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃
1445
mW
Safety Supply Current
RθJA = 86.5 ℃/W, T J = 150 ℃, T A = 25 ℃
262.7
mA
150
°C
Safety Temperature2)
Calculate with the junction-to-air thermal resistance, RθJA, of SOW16(300mil) package (Thermal Information Table) which is
that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
2)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Safety Limiting Power (mW)
1)
1600
1400
1200
1000
800
600
400
200
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.3 NSi822xW-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xW-DSWWR SOWW16(600mil)
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA = 86.5 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃
1445
mW
Safety Supply Current
RθJA = 86.5 ℃/W, T J = 150 ℃, T A = 25 ℃
262.7
mA
150
°C
Safety Temperature2)
Calculate with the junction-to-air thermal resistance, RθJA, of SOWW16(600mil) package (Thermal Information Table) which is
that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
2)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Safety Limiting Power (mW)
1)
1600
1400
1200
1000
800
600
400
200
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.4 NSi822xW-DSWWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-1
Copyright © 2022, NOVOSENSE
Page 21
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
6.3. Regulatory Information
The NSi822xN- DSPR are approved by the organizations listed in table.
CUL
UL 1577 Component
Recognition Program
VDE
Approved under CSA Component
Acceptance Notice 5A
DIN VDE V 088411:2017-01
CQC
Certified by CQC11471543-2012
GB4943.1-2011
Single Protection, 3750Vrms
Isolation voltage
Single Protection, 3750Vrms Isolation
voltage
Basic Insulation
565Vpeak,
VIOSM=5384Vpeak
Basic insulation
File (E500602)
File (E500602)
File (40050121)
File (CQC20001264940)
VDE
CQC
The NSi822xW-DSWVR are approved by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program
Single Protection, 5000Vrms
Isolation voltage
File (E500602)
Approved under CSA
Component Acceptance Notice
5A
DIN VDE V 088411(VDE V 088411):2017-01
Certified by CQC11471543-2012
Single Protection, 5000Vrms
Isolation voltage
Reinforced Insulation
2121Vpeak,
VIOSM=6250Vpeak
File (E500602)
File (40052820)
File (CQC20001264938)
VDE
CQC
GB4943.1-2011
Reinforced insulation
The NSi822xW-DSWR are approved by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program
Single Protection, 5000Vrms
Isolation voltage
File (E500602)
Copyright © 2022, NOVOSENSE
Approved under CSA
Component Acceptance Notice
5A
DIN VDE V 088411(VDE V 088411):2017-01
Single Protection, 5000Vrms
Isolation voltage
Reinforced Insulation
2121Vpeak,
VIOSM=6250Vpeak
File (E500602)
File (40052820)
Certified by CQC11471543-2012
GB4943.1-2011
Reinforced insulation
File (CQC20001264939)
Page 22
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
The NSi822xW-DSWWR are approved by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program
Single Protection, 8000Vrms
Isolation voltage
File (pending)
Copyright © 2022, NOVOSENSE
VDE
Approved under CSA
Component Acceptance Notice
5A
DIN VDE V 088411(VDE V 088411):2017-01
Single Protection, 8000Vrms
Isolation voltage
Reinforced Insulation
2121Vpeak,
VIOSM=6250Vpeak
File (pending)
File (pending)
CQC
Certified by CQC11471543-2012
GB4943.1-2011
Reinforced insulation
File (pending)
Page 23
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
7. Function Description
7.1. Overview
The NSi822x is a Dual-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with
RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier
and demodulated at the Receiver side.
The NSi822x devices are high reliability dual-channel digital isolator. The NSi822x device is safety certified by UL1577 support
several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low
power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to
250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the
input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the
level shift. High system level EMC performance enhance reliability and stability of use.
The NSi822x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 7.1, which helps for
diagnosis when power is missing at the transmitter side. The output B follows the same status with the input A within 60us after
powering up.
Table 7.1 Output status vs. power status
Input
VDD1
status
VDD2
status
Output
H1
Ready
Ready
H
L2
Ready
Ready
L
X3
Unready
Ready
L(NSi822xx0)
H(NSi822xx1
)
X
Ready
Unready
X
Comment
Normal operation.
The output follows the same status with the input within 60us
after input side VDD1 is powered on.
The output follows the same status with the input within 60us
after output side VDD2 is powered on.
Note: H=Logic high; L=Logic low; X=Logic low or logic high
VDD1 is input side power; VDD2 is out side power.
Copyright © 2022, NOVOSENSE
Page 24
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
7.2. OOK Modulation
NSi822x is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the
internal oscillator at the transmitter side, as shown in Figure 7.1, then it is transferred through the capacitive isolation barrier and
demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and
low radiation EMI.
Figure 7.1 Single Channel Function Block Diagram
Figure 7.2 OOK Modulation
Copyright © 2022, NOVOSENSE
Page 25
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
8. Application Note
8.1. Typical Application Circuit
Figure 8.1 Typical SCH for ISO CAN Interface
8.2. PCB Layout
The NSi822x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be
placed as close as possible to the package. Figure 8.2 to Figure 8.5 show the recommended PCB layout, make sure the space under
the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include
resistors (50–300 Ω ) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the
system reliability such as latch-up immunity.
The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
Figure8.2 Recommended PCB Layout — Top Layer
Figure8.3 Recommended PCB Layout — Bottom Layer
Figure8.4 Recommended PCB Layout — Top Layer
Figure8.5 Recommended PCB Layout — Bottom Layer
Copyright © 2022, NOVOSENSE
Page 26
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
8.3. High Speed Performance
Figure 8.6 shows the eye diagram of NSi822x at 200Mbps data rate output. The result shows a typical measurement on the NSi822x
with 350ps p-p jitter.
Figure8.6 NSi822x Eye Diagram
8.4. Typical Supply Current Equations
The typical supply current of NSi822x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured
in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF
NSi8220:
IDD1 = 0.19 *a1+1.45*b1+0.82*c1.
IDD2 = 1.36+ VDD1*f* CL *c1*10-9
When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of
switch signal input at side 1.
NSi8221/ NSi8222:
IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9
IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9
When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel
number of high input at side 2, c2 is the channel number of switch signal input at side 2.
Copyright © 2022, NOVOSENSE
Page 27
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
9. Package Information
Figure 9.1 SOP8 Package Shape and Dimension in millimeters
Copyright © 2022, NOVOSENSE
Page 28
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Figure 9.2 SOP8 Package Board Layout Example
Figure 9.3 SOW8 Package Shape and Dimension in millimeters
Copyright © 2022, NOVOSENSE
Page 29
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Figure 9.4 SOW8 Package Board Layout Example
Figure 9.5 SOP16(300mil)/SOW16 Package Shape and Dimension in millimeters
Copyright © 2022, NOVOSENSE
Page 30
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Figure 9.6 SOP16(300mil)/SOW16 Package Board Layout Example
Copyright © 2022, NOVOSENSE
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NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Figure 9.7 SOP16(600mil)/SOWW16 Package Shape and Dimension in millimeters
Figure 9.8 SOP16(600mil)/SOWW16 Package Board Layout Example
Copyright © 2022, NOVOSENSE
Page 32
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
10. Order Information
Part Number
Isolation
Rating
(kV)
Numbe
r of
side 2
inputs
0
Max Data
Rate
(Mbps)
Default
Output
State
Temperature
MSL
Package
Type
Package
Drawing
SPQ
3.75
Numbe
r of
side 1
inputs
2
NSi8220N0DSPR
NSi8220N1DSPR
NSi8221N0DSPR
NSi8221N1DSPR
NSi8222N0DSPR
NSi8222N1DSPR
NSi8220W0DSWR
NSi8220W1DSWR
NSi8221W0DSWR
NSi8221W1DSWR
NSi8222W0DSWR
NSi8222W1DSWR
NSi8220W0DSWVR
NSi8220W1DSWVR
NSi8221W0DSWVR
NSi8221W1DSWVR
NSi8222W0DSWVR
NSi8222W1DSWVR
NSi8220W0DSWWR
NSi8220W1DSWWR
NSi8221W0-
150
Low
-55 to 125℃
1
SOP8
2500
3.75
2
0
150
High
-55 to 125℃
1
SOP8
2500
3.75
1
1
150
Low
-55 to 125℃
1
SOP8
2500
3.75
1
1
150
High
-55 to 125℃
1
SOP8
2500
3.75
1
1
150
Low
-55 to 125℃
1
SOP8
2500
3.75
1
1
150
High
-55 to 125℃
1
SOP8
2500
5
2
0
150
Low
-55 to 125℃
2
SOW16
1000
5
2
0
150
High
-55 to 125℃
2
SOW16
1000
5
1
1
150
Low
-55 to 125℃
2
SOW16
1000
5
1
1
150
High
-55 to 125℃
2
SOW16
1000
5
1
1
150
Low
-55 to 125℃
2
SOW16
1000
5
1
1
150
High
-55 to 125℃
2
SOW16
1000
5
2
0
150
Low
-55 to 125℃
3
SOW8
1000
5
2
0
150
High
-55 to 125℃
3
SOW8
1000
5
1
1
150
Low
-55 to 125℃
3
SOW8
1000
5
1
1
150
High
-55 to 125℃
3
SOW8
1000
5
1
1
150
Low
-55 to 125℃
3
SOW8
1000
5
1
1
150
High
-55 to 125℃
3
SOW8
1000
8
2
0
150
Low
-55 to 125℃
3
SOWW16
1000
8
2
0
150
High
-55 to 125℃
3
SOWW16
1000
8
1
1
150
Low
-55 to 125℃
3
SOP8
(150mil)
SOP8
(150mil)
SOP8
(150mil)
SOP8
(150mil)
SOP8
(150mil)
SOP8
(150mil)
SOW16
(300mil)
SOW16
(300mil)
SOW16
(300mil)
SOW16
(300mil)
SOW16
(300mil)
SOW16
(300mil)
SOW8
(300mil)
SOW8
(300mil)
SOW8
(300mil)
SOW8
(300mil)
SOW8
(300mil)
SOW8
(300mil)
SOW16
(600mil)
SOW16
(600mil)
SOW16
SOWW16
1000
Copyright © 2022, NOVOSENSE
Page 33
NSi8220/NSi8221/NSi8222
Part Number
Isolation
Rating
(kV)
Numbe
r of
side 1
inputs
Numbe
r of
side 2
inputs
Datasheet (EN) 1.6
Max Data
Rate
(Mbps)
Default
Output
State
Temperature
MSL
DSWWR
NSi8221W18
1
1
150
High
3
-55 to 125℃
DSWWR
NSi8222W08
1
1
150
Low
3
-55 to 125℃
DSWWR
NSi8222W18
1
1
150
High
3
-55 to 125℃
DSWWR
NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 ℃ according
classifications and peak solder temperatures.
Package
Type
Package
Drawing
SPQ
(600mil)
SOW16
SOWW16
1000
(600mil)
SOW16
SOWW16
1000
(600mil)
SOW16
SOWW16
1000
(600mil)
to the JEDEC industry standard
Part Number Rule:
11. Documentation Support
Part Number
NSi822x
Product Folder
tbd
Copyright © 2022, NOVOSENSE
Datasheet
tbd
Technical Documents
tbd
Isolator selection guide
tbd
Page 34
NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
12. Tape and Reel Information
Figure 12.1 Reel Information (for all packages)
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NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Direction of Feed
1
2
3
4
Quadrant
Designations
Figure 12.2 Tape Information of SOP8
Copyright © 2022, NOVOSENSE
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NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Direction of Feed
1
2
3
4
Quadrant
Designations
Figure 12.2 Tape Information of SOW8
Copyright © 2022, NOVOSENSE
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NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Direction of Feed
1
2
3
4
Quadrant
Designations
Figure 12.3 Tape Information of SOW16
Copyright © 2022, NOVOSENSE
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NSi8220/NSi8221/NSi8222
Datasheet (EN) 1.6
Direction of Feed
1
2
3
4
Quadrant
Designations
Figure 12.4 Tape Information of SOWW16
Copyright © 2022, NOVOSENSE
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13. Revision History
Revision
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Description
Initial version
Update SOW8 package PIN description
Changed tape and reel information
Operating temperature support -55 to 125 ℃
Update SOWW16 package
Update Package Board Layout Example. Changed AEC-Q100 description.
Update SOWW16 MSL, Pin Configuration and VISO.
Copyright © 2022, NOVOSENSE
Date
2019/12/20
2020/6/23
2021/2/4
2021/7/7
2021/12/5
2022/4/16
2022/9/30
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IMPORTANT NOTICE
The information given in this document shall in no event be regarded as any warranty or authorization of, express or implied,
including but not limited to accuracy, completeness, merchantability, fitness for a particular purpose or infringement of any third
party’s intellectual property rights.
You are solely responsible for your use of Novosense’ products and applications, and for the safety thereof. You shall comply with
all laws, regulations and requirements related to Novosense’s products and applications, although information or support related
to any application may still be provided by Novosense.
The resources are intended only for skilled developers designing with Novosense’ products. Novosense reserves the rights to
make corrections, modifications, enhancements, improvements or other changes to the products and services provided.
Novosense authorizes you to use these resources exclusively for the development of relevant applications designed to integrate
Novosense’s products. Using these resources for any other purpose, or any unauthorized reproduction or display of these
resources is strictly prohibited. Novosense shall not be liable for any claims, damages, costs, losses or liabilities arising out of the
use of these resources.
For further information on applications, products and technologies, please contact Novosense (www.novosns.com ).
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