SK2371AA

SK2371AA P-Ch 100V Fast Switching MOSFETs Product Summary • Super Low Gate Charge • Excellent Cdv/dt effect decline BVDSS RDSON ID -100V 0.65Ω -2A • Green Device Available • Advanced high cell density Trench technology • Marking •• K 71 Description The SK2371AA s the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The 100P02 meets the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V -2 A -1.5 A -3 A 1 W ID@TA=70℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ Pulsed Drain Total Power 1 -10V1 Current2 Dissipation3 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol REV.08 Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 1 of 4 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W SK2371AA Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit -100 --- --- V Reference to 25℃ , ID=-1mA --- -0.0624 --- V/℃ VGS=-10V , ID=-1.5A --- 0.52 0.65 VGS=-4.5V , ID=-1A --- 0.56 0.7 -1.0 -1.5 -2.5 V --- 4.5 --- mV/℃ VDS=-80V , VGS=0V , TJ=25℃ --- --- 10 VDS=-80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=-250uA VGS=VDS , ID =-250uA  △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-0.8A --- 3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 16 32  Qg Total Gate Charge (-4.5V) --- 4.5 --- --- 1.14 --- VDS=-15V , VGS=-4.5V , ID=-0.5A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.5 --- Turn-On Delay Time --- 13.6 --- Td(on) uA nC Rise Time VDD=-50V , VGS=-10V , RG=3.3 --- 6.8 --- Turn-Off Delay Time ID=-0.5A --- 34 --- Fall Time --- 3 --- Ciss Input Capacitance --- 553 --- Coss Output Capacitance --- 29 --- Crss Reverse Transfer Capacitance --- 20 --- Min. Typ. Max. Unit --- --- -0.9 A --- --- -1.8 A --- --- -1.2 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Continuous Source Current1,4 Current2,4 ISM Pulsed Source VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The power dissipation is limited by 150℃ junction temperature 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. REV.08 2 of 4 SK2371AA Typical Characteristics 550 1.2 540 VGS=-10V -ID Drain Current (A) 0.9 RDSON(mΩ) VGS=-7V 530 VGS=-5V 0.6 520 VGS=-4.5V VGS=-3V 0.3 ID=0.5A 510 500 0.0 0 0.25 0.5 0.75 2 1 -VDS ,Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 -VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 1.5 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-20V ID=-0.5A 7.5 1 TJ=150℃ 0.5 TJ=25℃ 5 2.5 0 0.00 0.25 0.50 0.75 -VSD , Source-to-Drain Voltage (V) 0 1.00 0 5 7.5 10 Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.0 Normalized On Resistance 1.8 1.4 NormalizedVGS(th) (V) 2.5 QG , Total Gate Charge (nC) 1.5 1 1.0 0.6 0.2 -50 0 50 100 0.5 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ REV.08 0 50 100 TJ , Junction Temperature (℃) 150 Fig.6 Normalized RDSON vs. TJ 3 of 4 3 SK2371AA 1000 10.00 F=1.0MHz Ciss 1ms Capacitance (pF) 1.00 100ms 100 0.10 -ID (A) 1s Coss 10S 0.01 DC TA=25℃ Single Pulse Crss 10 1 5 9 13 17 21 -VDS ,Drain to Source Voltage (V) 0.00 25 0.1 10 1 Fig.7 Capacitance 100 -V DS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 UTY=0.5 0.2 0.1 .1 .05 0.02 0.01 0.01 PDM 0.001 TON INGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fi .9 Normalized Maximum Transient Thermal Impedance g VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform REV.08 Fig.11 Gate Charge Waveform 4 of 4 4