SI2302DS

SI2302DS www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 8.8 nC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications SOT-23 G 1 3 S D 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C Continuous Drain Current (TJ = 150 °C) Limit 20 ±8 ID 5b, c 4b, c 20 1.75 IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 70 °C Operating Junction and Storage Temperature Range V 6a 5.1 TA = 70 °C Pulsed Drain Current Unit IS A 1.04b, c 2.1 1.3 PD W 1.25b, c 0.8b, c - 55 to 150 260 TJ, Tstg Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Symbol RthJA Typical 80 Maximum 100 Steady State RthJF 40 60 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. e. Based on TC = 25 °C. 1 SI2302DS www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 25 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 Gate-Source Leakage - 2.6 0.45 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A 0.0265 0.0318 RDS(on) VGS = 2.5 V, ID = 4.7 A 0.0296 0.0356 VGS = 1.8 V, ID = 4.3 A 0.0345 0.0414 VDS = 10 V, ID = 5.0 A 24 Drain-Source On-State Resistancea Forward Transconductancea gfs µA A 20 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 865 VDS = 10 V, VGS = 0 V, f = 1 MHz pF 55 VDS = 10 V, VGS = 5 V, ID = 5.0 A 12 18 8.8 14 1.1 VDS = 10 V, VGS = 4.5 V, ID = 5.0 A VDD = 10 V, RL = 2.2 Ω ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 0.5 2.4 4.8 8 16 17 26 31 47 tf 8 16 td(on) 5 10 13 20 td(off) tr td(off) nC 0.7 f = 1 MHz td(on) tr 105 VDD = 10 V, RL = 2.2 Ω ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω tf 21 32 6 12 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 1.75 20 IS = 4 A, VGS = 0 V 0.75 1.2 A V Body Diode Reverse Recovery Time trr 12 20 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 7 5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 SI2302DS www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 V GS = 5 V thru 2 V 4 V GS = 1.5 V I D - Drain Current (A) I D - Drain Current (A) 15 10 3 2 T C = 25 °C 5 1 T C = 125 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 T C = - 55 °C 0 0.0 2.0 0.3 V DS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 Transfer Characteristics Output Characteristics 1200 0.045 Ciss 0.040 900 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 V GS - Gate-to-Source Voltage (V) V GS = 1.8 V 0.035 V GS = 2.5 V 0.030 V GS = 4.5 V 600 300 0.025 Coss Crss 0 0.020 0 5 10 15 0 20 5 10 15 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.70 5 4 V DS = 10 V 3 V DS = 5 V 2 V DS = 16 V V GS = 2.5 V, I D = 4.7 A 1.45 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 5 A 1.20 V GS = 4.5 V, I D = 5 A 0.95 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge 8 10 0.70 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 SI2302DS www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.06 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A T J = 150 °C 10 T J = 25 °C 1 0.05 0.04 T J = 125 °C 0.03 T J = 25 °C 0.02 0.1 0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 32 0.9 0.7 24 Power (W) VGS(th) (V) ID = 250 μA 0.5 0.3 0.1 - 50 16 8 - 25 0 25 50 75 100 125 0 0.001 150 0.01 100 Limited by R DS(on)* I D - Drain Current (A) 1 10 100 Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 100 μs 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 0.1 1 s, 10 s DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 Time (s) T J - Temperature (°C) SI2302DS www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7.5 I D - Drain Current (A) 6.0 Package Limited 4.5 3.0 1.5 0.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 2.5 1.2 2.0 1.5 Power (W) Power (W) 0.9 1.0 0.6 0.3 0.5 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 SI2302DS www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 10 100 1000 10 000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.02 Single Pulse 0.05 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 SI2302DS www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 7 SI2302DS www.VBsemi.com 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 SI2302DS www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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