VS1602GMH

VS1602GMH 100V/130A N-Channel Advanced Power MOSFET Features  Enhancement mode V DS 100 V R DS(on),TYP@ VGS=10 V 3.6 mΩ I D(Wire bond limited) 130 A  Low RDS(on) to minimize conduction losses  VitoMOS® Ⅱ Technology TO-263  100% Avalanche Tested, Rg 100% Tested Part ID Package Type Marking Packing VS1602GMH TO-263 1602GMH 800pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 100 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current (Wire bond limited) TC = 25°C 130 A ID Continuous drain current @VGS=10V (Wire bond limited) TC = 25°C 130 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 100°C 120 A IDM Pulse drain current tested ① TC =25°C 675 A TA=25°C 16 A IDSM Continuous drain current @VGS=10V TA=70°C 12 A 484 mJ EAS Maximum Avalanche energy, single pulsed ② PD Maximum power dissipation ③ TC =25°C 250 W PDSM Maximum power dissipation ④ TA=25°C 2.1 W TJ,TSTG Operating junction and storage temperature range -55 to 175 °C Typical Max Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case ⑤ 0.5 0.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient ⑥ 50 60 °C/W Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 www.vgsemi.com VS1602GMH 100V/130A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=100V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃)⑦ VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2.5 3 3.5 V -- 3.6 4.5 mΩ RDS(on) Drain-Source On-State Resistance ⑧ -- 4.7 -- mΩ -- 5195 -- pF -- 875 -- pF -- 30 -- pF -- 1.8 -- Ω -- 91 -- nC -- 25 -- nC -- 25 -- nC -- 21 -- ns IDSS VGS=10V, ID=40A (Tj=100℃)⑦ Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance ⑦ Coss Output Capacitance ⑦ Crss Reverse Transfer Capacitance ⑦ Rg Gate Resistance Qg Total Gate Charge ⑦ Qgs Gate-Source Charge ⑦ Qgd Gate-Drain Charge ⑦ VDS=50V,VGS=0V, f=100KHz f=1MHz VDS=50V,ID=40A, VGS=10V Switching Characteristics ⑦ Td(on) Turn-on Delay Time Tr Turn-on Rise Time ID=40A, -- 69 -- ns Td(off) Turn-Off Delay Time RG=3Ω, -- 57 -- ns -- 70 -- ns Tf Turn-Off Fall Time VDD=50V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=40A,VGS=0V -- 0.8 1.2 V Trr Reverse Recovery Time ⑦ Isd=40A, VGS=0V -- 59 -- ns Qrr Reverse Recovery Charge ⑦ di/dt=100A/μs -- 71 -- nC NOTE: ① Single pulse; pulse width ≤ 100μs. ② This maximum value is based on starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 44A, VGS =10V；100% FT tested at L = 0.5mH, IAS = 22A. ③ The power dissipation Pd is based on Tj(max), using junction-to-case thermal resistance RθJC. ④ The power dissipation Pdsm is based on Tj(max), using junction-to-ambient thermal resistance RθJA. ⑤ Thermal resistance from junction to soldering point (on the exposed drain pad). These tests are performed on a cool plate. ⑥ The value of RθJA is measured with the device in a still air environment with TA =25°C. ⑦ Guaranteed by design, not subject to production testing. ⑧ Pulse width ≤ 380μs; duty cycle≤ 2%. Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 www.vgsemi.com VS1602GMH 100V/130A N-Channel Advanced Power MOSFET Typical Characteristics 3.9 10V,9V,8V,7V,6V VGS= 5V 90 VGS(TH), Gate -Source Voltage (V) ID, Drain-Source Current (A) 120 Notes: 1. 250μs pulse test 2. Tj=25°C 60 VGS= 4.5V 30 ID= 250uA 3.6 3.3 Max 3.0 2.7 Typ 2.4 Min 2.1 1.8 1.5 1.2 0.9 0 0 1 2 3 4 5 6 0 7 25 VDS, Drain -Source Voltage (V) 75 100 125 150 175 200 175 200 Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj 100 2.5 VDS=5V Normalized On Resistance 80 ID, Drain-Source Current (A) 50 60 40 125° C 25° C 20 2.0 VGS= 10V ID= 40A 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 0 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) Fig4. Typical Normalized On-Resistance Vs. Tj Fig3. Typical Transfer Characteristics 8 20 IDS= 40A 6 On Resistance (mΩ) On Resistance (mΩ) 16 12 125°C 8 4 VGS=10V 4 2 25°C 0 0 0 2 4 6 8 10 12 VGS, Gate -Source Voltage (V) Fig5. Typical On Resistance Vs Gate -Source Voltage Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 5 10 15 20 25 30 35 40 ID, Drain-Source Current (A) Fig6. Typical On Resistance Vs Drain Current and Gate www.vgsemi.com VS1602GMH 100V/130A N-Channel Advanced Power MOSFET Typical Characteristics 10 Tj=125°C Tj=25°C RDS(ON) limited 1000 ID - Drain Current (A) ISD, Reverse Drain Current (A) 100 100 10µs 100µs 10 1ms 1 10ms 1 TC=25°C 0.1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1.6 1 10 100 VDS, Drain -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig7. Typical Source-Drain Diode Forward Voltage Fig8. Maximum Safe Operating Area 10 C, Capacitance (pF) 10000 VGS, Gate-Source Voltage (V) VDS= 50V Ciss Coss 1000 Crss 100 ID= 40A 8 6 4 2 Frequency=100 KHz 0 10 0.1 1 10 0 100 40 60 80 100 Qg - Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig9. Typical Capacitance Vs. Drain-Source Voltage Fig10. Typical Gate Charge Vs. Gate-Source Voltage 200 300 wire bond limited -------- silicon limited 250 ID, Maximum Drain Current (A) Ptot, Power Dissipation (W) 20 200 150 100 50 25 120 80 40 ID=f(TC);VGS≥10V Ptot=f(TC) 0 0 0 160 50 75 100 125 150 175 TC - Case Temperature (°C) Fig11. Power Dissipation Vs. Case Temperature Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 200 0 25 50 75 100 125 150 175 200 TC - Case Temperature (°C) Fig12. Maximum Drain Current Vs. Case Temperature www.vgsemi.com VS1602GMH 100V/130A N-Channel Advanced Power MOSFET Typical Characteristics D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.5°C/W In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 1 Thermal Resistance ZθJC Normalized Transient 10 0.1 0.01 0.001 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig13 . Normalized Maximum Transient Thermal Impedance Fig14. Unclamped Inductive Test Circuit and waveforms Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 Fig15. Switching Time Test Circuit and waveforms www.vgsemi.com 100 VS1602GMH 100V/130A N-Channel Advanced Power MOSFET Marking Information Vs 1602GMH XXXYWW 1st line： 2nd line： 3rd line： Vergiga Code（Vs） ， Vergiga Logo Part Number（1602GMH） Date code （XXXYWW） XXX： Wafer Lot Number Code , code changed with Lot Number Y： Year Code, refer to table below WW： Week Code (01 to 53) Code C D E F G H J K L M N P Q R S T Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 www.vgsemi.com VS1602GMH 100V/130A N-Channel Advanced Power MOSFET TO-263 Package Outline Data Symbol Dimensions (unit: mm) Notes: Min Typ Max 1. Refer to JEDEC TO-263 variation AB A 4.37 4.57 4.77 2. Dimension "D" and "E" do NOT include mold flash. A1 1.22 1.27 1.42 Mold flash shall not exceed 0.127mm per side. A2 2.49 2.69 2.89 A3 0.00 0.13 0.25 b 0.70 0.81 0.96 b1 1.17 1.27 1.47 c 0.30 0.38 0.53 D1 8.50 8.70 8.90 D2 6.60 -- -- E 9.86 10.16 10.36 E1 7.06 -- -- e 2.54 BSC H 14.70 15.10 15.50 H2 1.07 1.27 1.47 L 2.00 2.30 2.60 L1 1.40 1.55 1.70 Copyright Vergiga Semiconductor Co., Ltd Rev B – MAY, 2023 www.vgsemi.com