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YSO8008MR
Features:
F
Low Power Programmable Oscillator
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places
100% pin-to-pin drop-in replacement to quartz-based XO
Operating temperature from -40°C to 85°C.
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life, fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
F
Applications:
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB, SATA, SAS,
Firewire, 100M / 1G / 10G Ethernet, etc.
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values
are at 25°C and nominal supply voltage.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
110
MHz
Frequency Stability and Aging
Frequency Stability
F_stab
-20
–
+20
ppm
-25
–
+25
ppm
–
+50
ppm
-50
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load.
Operating Temperature Range
Operating Temperature Range
T_use
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
Supply Voltage and Current Consumption
Supply Voltage
Current Consumption
OE Disable Current
Standby Current
Vdd
Idd
I_OD
I_std
1.62
1.8
1.98
V
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.7
3.0
3.3
V
2.97
3.3
3.63
V
2.25
–
3.63
V
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
–
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
–
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
–
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
–
–
4.0
mA
Vdd = 1.8V, OE = GND, Output in high-Z state
–
2.1
4.3
A
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
–
1.1
2.5
A
ST = GND, Vdd = 2.5V, Output is weakly pulled down
–
0.2
1.3
A
ST = GND, Vdd = 1.8V, Output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
DC
45
–
55
%
All Vdds. See Duty Cycle definition in Figure 3 and Footnote 8
Tr, Tf
–
1
2
ns
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
–
1.3
2.5
ns
Vdd =1.8V, 20% - 80%
–
–
2
ns
Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage
VOH
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage
VOL
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
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YSO8008MR
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Input Characteristics
Input High Voltage
VIH
70%
–
–
Vdd
Input Low Voltage
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
50
87
150
k
Pin 1, OE logic high or logic low, or ST logic high
–
–
M
Pin 1, ST logic low
2
Pin 1, OE or ST
Startup and Resume Timing
Startup Time
T_start
–
–
5
ms
T_oe
–
–
130
ns
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
T_resume
–
–
5
ms
Measured from the time ST pin crosses 50% threshold
T_jitt
–
1.8
3
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
–
1.8
3
ps
f = 75 MHz, Vdd = 1.8V
12
25
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
Enable/Disable Time
Resume Time
Measured from the time Vdd reaches its rated minimum value
Jitter
RMS Period Jitter
Peak-to-peak Period Jitter
T_pk
–
–
14
30
ps
f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random)
T_phj
–
0.5
0.9
ps
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
–
1.3
2
ps
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Table 2. Pin Description
Pin
1
Symbol
OE/ ST/NC
H[1]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H[1]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
No Connect
2
Top View
Functionality
Output
Enable
Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 has no function.
GND
Power
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[2]
OE/ST/NC
1
4
VDD
GND
2
3
OUT
Electrical ground
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
If pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[3]
Recommended Land Pattern (Unit: mm)[4]
2.0 x 1.6 x 0.75 mm
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YSO8008MR
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[3]
Recommended Land Pattern (Unit: mm)[4]
2.5 x 2.0 x 0.75 mm
2.5 ± 0.05
#3
#2
#2
1.5
1.9
#1
1.0
1.2
#1
0.5
YXXXX
1.9
2.2
#4
1.1
YXC
100.000
1.00
#3
2.0 ± 0.05
#4
0.75 ± 0.05
0.75
1.4
1.1
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05
2.1
#3
#3
#2
#1
0.9
0.75 ± 0.05
#2
1.2
#1
1.9
YXXXX
0.7
YXC
100.000
2.2
#4
0.9
2.5 ± 0.05
#4
1.4
5.0 x 3.2 x 0.75 mm
2.54
5.0 ± 0.05
#3
#2
#1
1.6
#2
0.75 ± 0.05
#1
2.2
YXXXX
#4
1.1
3.2 ± 0.05
YXC
100.000
#3
0.8
#4
2.39
1.15
1.5
7.0 x 5.0 x 0.90 mm
5.08
0.90 ± 0.10
3.81
2.0
1.1
YXXXX
5.08
2.6
YXC
100.000
5.0 ± 0.05
7.0 ± 0.05
1.4
2.2
Notes:
3. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Dimensions Frequency Supply voltage
(V)
(Hz)
Frequency
Stability Output
Overall
(ppm)
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Pin
Material Operating Temp.
Range
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YSO8008MR
N
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Min.
Max.
Unit
Storage Temperature
Parameter
-65
150
°C
Vdd
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Junction Temperature[5]
–
150
°C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration[6]
JA, 4 Layer Board
JA, 2 Layer Board
JC, Bottom
7050
142
273
30
5032
97
199
24
3225
109
212
27
Package
(°C/W)
(°C/W)
(°C/W)
2520
117
222
26
2016
152
252
36
Note:
6. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Table 5. Maximum Operating Junction Temperature[7]
Max Operating Temperature (ambient)
Maximum Operating Junction Temperature
70°C
80°C
85°C
95°C
Note:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Condition/Test Method
Parameter
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
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YSO8008MR
Test Circuit and Waveform[8]
Vdd
Vout
0.1µF
tr
3
4
Power
Supply
Test
Point
1
tf
80% Vdd
50%
15pF
(including probe
and fixture
capacitance)
2
20% Vdd
High Pulse
(TH)
Low Pulse
(TL)
Period
Vdd
1k
OE/ST Function
Figure 3. Waveform
Figure 2. Test Circuit
Note:
8. Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagrams
Vdd
90% Vdd
Vdd
T_start
Pin 4 Voltage
50% Vdd
[9]
T_resume
ST Voltage
No Glitch
during start up
CLK Output
CLK Output
HZ
HZ
T_resume: Time to resume from ST
T_start: Time to start from power-off
Figure 4. Startup Timing (OE/ST Mode)
Figure 5. Standby Resume Timing (ST Mode Only)
u
Vdd
Vdd
50% Vdd
OE Voltage
OE Voltage
50% Vdd
T_oe
T_oe
CLK Output
CLK Output
HZ
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
9. YSO8008MR has “no runt” pulses and “no glitch” output during startup or resume.
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YSO8008MR
Performance Plots[10]
1.8
2.5
2.8
3.0
3.3
6.0
DUT2
DUT3
DUT4
DUT5
DUT6
DUT7
DUT8
DUT9
DUT10
20
15
5.5
10
Frequency (ppm)
5.0
Idd (mA)
DUT1
4.5
4.0
5
0
-5
-10
3.5
-15
-20
3.0
0
10
20
30
40
50
60
70
80
90
100
-30
-40
110
-20
-10
Frequency (MHz)
2.8 V
3.0 V
20
30
40
50
60
70
80
Figure 9. Frequency vs Temperature
3.3 V
1.8 V
4.0
55
3.5
54
2.5 V
2.8 V
3.0 V
3.3 V
53
3.0
52
Duty cycle (%)
RMS period jitter (ps)
2.5 V
10
Temperature (°C)
Figure 8. Idd vs Frequency
1.8 V
0
2.5
2.0
1.5
1.0
51
50
49
48
47
0.5
46
0.0
0
10
20
30
40
50
60
70
80
90
100
45
110
0
Frequency (MHz)
10
2.8 V
3.0 V
3.3 V
1.8 V
2.5
2.5
2.0
2.0
1.5
50
60
70
80
90
100
110
1.0
2.5 V
2.8 V
3.0 V
3.3 V
1.5
1.0
0.5
0.5
0.0
-40
-15
10
35
60
0.0
85
-40
-15
Temperature (°C)
1.8 V
2.5 V
2.8 V
3.0 V
10
35
60
85
Temperature (°C)
Figure 12. 20%-80% Rise Time vs Temperature
Figure 13. 20%-80% Fall Time vs Temperature
3.3 V
1.8 V
2.0
0.9
1.8
0.8
1.6
0.7
IPJ (ps)
IPJ (ps)
40
Figure 11. Duty Cycle vs Frequency
Fall time (ns)
Rise time (ns)
2.5 V
30
Frequency (MHz)
Figure 10. RMS Period Jitter vs Frequency
1.8 V
20
)
s
p
( 1.4
J
P
I
1.2
2.5 V
2.8 V
3.0 V
3.3 V
0.6
0.5
1.0
10
30
50
70
90
0.4
110
10
30
50
70
90
110
Frequency (MHz)
Frequency (MHz)
(MHz)
Frequency
Figure 14. RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency[11]
Figure 15. RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency[11]
Notes:
10. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.
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YSO8008MR
Programmable Drive Strength
The YSO8008MR includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the clock
rise/fall time for specific applications. Benefits from the
programmable drive strength feature are:
• Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
• Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time.
• Ability to drive large capacitive loads while maintaining full
EMI Reduction by Slowing Rise/Fall Time
Figure 16 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the rise/fall times are very close to near-triangular waveform.
These results, for example, show that the 11th clock harmonic
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the period to 45% of the period.
YSO8008MR Drive Strength Selection
Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage.
1. Select the table that matches the YSO8008MR nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the desired
rise/fall times.
4. The left-most column represents the part number code
for the corresponding drive strength.
5. Add the drive strength code to the part number for ordering purposes.
trise=0.05
trise=0.1
trise=0.15
trise=0.2
10
0
Harmonic amplitude (dB)
The YSO8008MR can support up to 60 pF or higher in
maximum capacitive loads with drive strength settings.
Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination
of output load vs. rise/fall time.
trise=0.25
trise=0.3
trise=0.35
trise=0.4
trise=0.45
-10
-20
-30
-40
-50
-60
-70
-80
1
3
5
7
9
11
Harm onic num ber
Figure 16. Harmonic EMI reduction as a Function of
Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to speed
up the rise/fall time of the input clock. Some chipsets may also
require faster rise/fall time in order to reduce their sensitivity to
this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to
Table 11) to determine the proper drive strength.
High Output Load Capability
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V YSO8008 MR device
with default drive strength setting, the typical rise/fall time is
1 ns for 15 pF output load. The typical rise/fall time slows
down to 2.6 ns when the output load increases to 45 pF.
One can choose to speed up the rise/fall time to 1.83
ns by then increasing the drive strength setting on the
YSO8008MR.
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YSO8008MR
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD
Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
T
E
U
F or "‐": default
6.16
3.19
2.11
1.65
0.93
0.78
0.70
0.65
11.61
6.35
4.31
3.23
1.91
1.66
1.48
1.30
22.00
11.00
7.65
5.79
3.32
2.94
2.64
2.40
31.27
16.01
10.77
8.18
4.66
4.09
3.68
3.35
39.91
21.52
14.47
11.08
6.48
5.74
5.09
4.56
L
A
R
B
T
E or "‐": default
U
F
4.13
2.11
1.45
1.09
0.62
8.25
4.27
2.81
2.20
1.28
12.82
7.64
5.16
3.88
2.27
21.45
11.20
7.65
5.86
3.51
27.79
14.49
9.88
7.57
4.45
0.54
0.43
0.34
1.00
0.96
0.88
2.01
1.81
1.64
3.10
2.79
2.54
4.01
3.65
3.32
Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD
Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
T
3.77
1.94
1.29
0.97
0.55
7.54
3.90
2.57
2.00
1.12
12.28
7.03
4.72
3.54
2.08
19.57
10.24
7.01
5.43
3.22
25.27
13.34
9.06
6.93
4.08
E or "‐": default
U
F
0.44
0.34
0.29
1.00
0.88
0.81
1.83
1.64
1.48
2.82
2.52
2.29
3.67
3.30
2.99
L
A
R
B
T or "‐": default
E
U
F
3.60
1.84
1.22
0.89
0.51
0.38
0.30
0.27
7.21
3.71
2.46
1.92
1.00
0.92
0.83
0.76
11.97
6.72
4.54
3.39
1.97
1.72
1.55
1.39
18.74
9.86
6.76
5.20
3.07
2.71
2.40
2.16
24.30
12.68
8.62
6.64
3.90
3.51
3.13
2.85
Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
3.39
1.74
1.16
0.81
6.88
3.50
2.33
1.82
11.63
6.38
4.29
3.22
17.56
8.98
6.04
4.52
23.59
12.19
8.34
6.33
T or "‐": default
E
U
F
0.46
0.33
0.28
0.25
1.00
0.87
0.79
0.72
1.86
1.64
1.46
1.31
2.60
2.30
2.05
1.83
3.84
3.35
2.93
2.61
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YSO8008MR
Pin 1 Configuration Options (OE, ST, or NC)
Pin 1 of the YSO8008MR can be factory-programmed to support
three modes: Output Enable (OE), standby (ST) or No
Connect (NC).
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only disables
the output driver and puts it in Hi-Z mode. The core of the
device continues to operate normally. Power consumption is
reduced due to the inactivity of the output. When the OE pin is
pulled High, the output is ty pically enabled in