G65P06D5

G65P06D5 P-Channel Enhancement Mode Power MOSFET Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested Schematic diagram -60V -65A < 20mΩ l RoHS Compliant pin assignment Application l Power switch l DC/DC converters DFN5*6-8L Ordering Information Device Package Marking Packaging G65P06D5 DFN5*6-8L G65P06 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -65 A IDM -260 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 104 W EAS 156 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 1.2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468) G65P06D5 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.5 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -20A -- 13.5 18 mΩ Forward Transconductance gFS VDS = -5V,ID = -20A -- 37 -- S -- 6138 -- -- 333 -- -- 345 -- -- 75 -- -- 16 -- -- 19 -- -- 18 -- -- 20 -- -- 55 -- -- 35 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -30A, VGS = -10V VDD = -30V, ID = -30A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -65 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 0.77 -- nC Reverse Recovery Time Trr -- 0.13 -- ns IF = -30A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468) G65P06D5 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468) G65P06D5 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 -10V 100 VDS= -5V -6V -ID, Drain Current (A) -ID, Drain Current (A) 120 -5.5V 80 -5V 60 40 -4.5V 20 0 VGS=-4V 0 1 2 3 100 80 60 20 0 4 25℃ 40 0 -VDS, Drain-to-Source Voltage (V) 30 25 VGS= -4.5V 15 VGS= -10V 5 0 0 10 20 30 5000 4000 3000 2000 Coss Crss 10 20 30 40 50 4 2 0 20 40 60 80 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com 6 -Is, Reverse Drain Current (A) Capacitance(pF) Ciss 6000 0 8 Figure 6. Source-Drain Diode Forward 8000 0 VDD = -30V ID = -20A Qg Gate Charge（nC） Figure 5. Capacitance 1000 8 10 0 40 -ID-Drain Current (A) 7000 6 Figure 4. Gate Charge -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 35 10 4 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 20 2 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1468) G65P06D5 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V ID = -20A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 0.45°C/W 1.2°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468) G65P06D5 DFN5X6-8L Package information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468)