ES05D1HA03

ES05D1HA03 Bi-directionESDProtection Diode Features  Bi-directional ESD protection of one line E E b  Reverse stand−off voltage: 5V ∠ALL ROUND D  Low reverse clamping voltage  Fast response time C A1  Low leakage current A  IEC 61000-4-2 (ESD) immunity test ： L1  Air discharge: ±30kV E1  Contact discharge: ±30kV SOD-323 mechanical data Marking Diagram A C D E max 1.1 0.15 1.4 1.8 min 0.8 0.08 1.2 1.4 max 43 5.9 55 70 min 32 3.1 47 63 UNIT b L1 A1 2.75 0.4 0.45 0.2 2.55 0.25 0.2 108 16 16 100 9.8 7.9 E1 ∠ mm 9° 05C Description Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as 8 mil Applications  Computers and peripherals  High speed data lines  Audio and video equipment  Cellular handsets and accessories  Subscriber identity module(SIM) card protection HDMI, Display Port TM, and MDDI interfaces. It is designed to replace  Portable electronics multiplayer varistors (MLV) in consumer equipments applications such  FireWire as mobile phone, notebook, PAD, STB, LCD TV etc.  Other electronics equipments communi- cation systems REV 1.0 2020 JAN PAGE:1/3 ES05D1HA03 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 350 W Peak Pulse Current (8/20µs) IPP 20 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage VRWM Breakdown Voltage VBR Test Condition IT = 1mA Min 5.6 Typ Max Unit 5 V 8 V Reverse Leakage Current IR VRWM = ±5V 0.5 uA Clamping Voltage Vc IPP = 20A (8 x 20µs pulse) 16 V Junction Capacitance Cj VR = 0V, f = 1MHz 50 pF Electronics Parameter Symbol Parameter IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @Ic VBR Breakdown Voltage @ IT IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage REV 1.0 2020 JAN PAGE:2/3 Typical Performance Characteristics (TA=25°C unless otherwise Specified) 40 90 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 100 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 VR—Reverse Voltage(V) Junction Capacitance vs. Reverse Voltage 36 32 28 24 20 16 12 8 4 0 0 5 10 15 20 25 30 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current Peak Power_Ppp(kW) 100 10 1 0.1 0.1 1.0 10.0 Pulse Duration_tp(uS) 100.0 Peak Pulse Power vs. Pulse Time Power Derating Curve ESD pulse waveform according to IEC61000-4-2 8/20μs pulse waveform according to IEC 61000-4-5 REV 1.0 2020 JAN PAGE:3/3