AP3P10MI

AP3P10MI -100V P-Channel Enhancement Mode MOSFET Description The AP3P10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-3A RDS(ON) < 350mΩ @ VGS=-10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3P10MI SOT-23-3L 3P10-AP 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -3 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -1.7 A IDM Pulsed Drain Current2 -9 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃/W RθJC Thermal Resistance Junction-Case1 80 ℃/W 1 AP3P10MI RVE1.0 臺灣永源微電子科技有限公司 AP3P10MI -100V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 -111 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.0624 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-3A VGS=-4.5V , ID=-2A ----- 260 320 350 400 mΩ VGS(th) Gate Threshold Voltage -1.2 -1.9 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.5 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- 1 VDS=-100V , VGS=0V , TJ=100℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-0.8A --- 3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 16 32 Ω Qg Total Gate Charge (-4.5V) --- 4.5 --- Qgs Gate-Source Charge --- 1.14 --- Qgd Gate-Drain Charge --- 1.5 --- Td(on) Turn-On Delay Time --- 17.6 --- Tr Rise Time --- 2.7 --- Td(off) Turn-Off Delay Time --- 4.5 --- Tf Fall Time --- 3 --- Ciss Input Capacitance --- 550 --- Coss Output Capacitance --- 56 --- Crss Reverse Transfer Capacitance --- 35 --- --- --- -3 A --- --- -9 A --- --- -1.3 V IS ISM VSD Continuous Source VGS=VDS , ID =-250uA VDS=-15V , VGS=-4.5V , ID=-0.5A VDD=-50V , VGS=-10V , RG=3.3Ω ID=-0.5A Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 VDS=-15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ uA nC ns pF Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP3P10MI RVE1.0 臺灣永源微電子科技有限公司 AP3P10MI -100V P-Channel Enhancement Mode MOSFET Typical Characteristics 400 ID=3A RDSON (mΩ) ID Drain Current (A) 360 310 270 230 2 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 8 10 VGS (V) Fig.2 On-Resistance vs. Gate-Source IS Source Current(A) Voltage VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Normalized VGS(th) diode TJ ,Junction Temperature (℃ ) AP3P10MI RVE1.0 Fig.6 Capacitance 臺灣永源微電子科技有限公司 3 Fig.5 Normalized VGS(th) vs. TJ VDS Drain to Source Voltage (V) AP3P10MI -100V P-Channel Enhancement Mode MOSFET Square Wave Pluse Duration(sec) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 AP3P10MI RVE1.0 臺灣永源微電子科技有限公司 AP3P10MI -100V P-Channel Enhancement Mode MOSFET Package Mechanical Data：SOT23-3L Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950TYP 1.800 L 2.000 0.550REF L1 0.300 0.500 θ 0° 8° 5 AP3P10MI RVE1.0 臺灣永源微電子科技有限公司 AP3P10MI -100V P-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 AP3P10MI RVE1.0 臺灣永源微電子科技有限公司 AP3P10MI -100V P-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2020/8/11 Initial release Copyright Attribution“APM-Microelectronice” 7 AP3P10MI RVE1.0 臺灣永源微電子科技有限公司