MDU1514URH

Single N-channel Trench MOSFET 30V, 66.3A, 6.0mΩ General Description Features    The MDU1514 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable device for DC/DC Converter and general purpose applications.   D D D D D D D D S S S VDS = 30V ID = 66.3A @VGS = 10V RDS(ON) < 6.0 mΩ @VGS = 10V < 9.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G S S S G G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V ±20 V VGSS TC=25oC TC=70oC Continuous Drain Current (1) o TA=25 C 66.3 ID TA=70oC Pulsed Drain Current IDM TC=25 C Power Dissipation o TA=25 C 100 PD 29.6 W 5.5(3) 3.5(3) EAS 79.0 TJ, Tstg -55~150 Symbol Rating Thermal Resistance, Junction-to-Ambient (1) RθJA 22.7 Thermal Resistance, Junction-to-Case RθJC 2.7 Junction and Storage Temperature Range A 46.2 TA=70oC Single Pulse Avalanche Energy (2) A 22.8(3) 18.2(3) o TC=70oC 53.0 mJ o C Thermal Characteristics Characteristics Jul. 2021. Version 1.4 1 Unit o C/W Magnachip Semiconductor Ltd. MDU1514 – Single N-Channel Trench MOSFET 30V MDU1514 Part Number Temp. Range Package Packing Quantity Rohs Status MDU1514URH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7 - - 1 - - 5 - - ±0.1 - 5.2 6.0 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 18A Drain-Source ON Resistance Forward Transconductance o RDS(ON) gfs - 7.5 8.7 VGS = 4.5V, ID = 14A TJ=125 C - 7.5 9.0 VDS = 5V, ID = 10A - 33 - 14.3 19 23.8 6.6 8.8 11.0 - 3 - - 2.8 - 913 1217 1521 V μA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 18A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss 89 119 149 Output Capacitance Coss 186 248 310 Turn-On Delay Time td(on) - 7.9 - - 11.5 - - 27.0 - - 8.3 - 1.0 2.0 2.8 Ω - 0.8 1.1 V - 24.5 36.8 ns - 16.7 25.1 nC Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, ID = 18A , RG = 3.0Ω tf Rg f=1 MHz VSD IS = 18A, VGS = 0V pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 18A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 22A, VDD = 27V, VGS = 10V. 3. T < 10sec. Jul. 2021. Version 1.4 2 Magnachip Semiconductor Ltd. MDU1514 – Single N-Channel Trench MOSFET 30V Ordering Information 4.0V 3.5V Drain-Source On-Resistance [mΩ] VGS = 10V ID, Drain Current [A] 4.5V 30 5.0V 3.0V 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 12 VGS = 4.5V 9 6 VGS = 10V 3 0 3.0 5 10 VDS, Drain-Source Voltage [V] 15 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 100 1.8 ※ Notes : ※ Notes : ID = 18.0A 1. VGS = 10 V 2. ID = 16.0 A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 25 ID, Drain Current [A] 1.4 1.2 1.0 80 60 40 20 0.8 TA = 25℃ 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 ※ Notes : ※ Notes : VGS = 0V 1 IDR, Reverse Drain Current [A] ID, Drain Current [A] VDS = 5V 12 8 TA=25℃ 4 10 TA=25℃ 0 10 -1 10 0 0 1 2 3 4 0.3 5 Fig.5 Transfer Characteristics Jul. 2021. Version 1.4 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 Magnachip Semiconductor Ltd. MDU1514 – Single N-Channel Trench MOSFET 30V 15 40 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 18A Ciss VDS = 15V 1200 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 900 600 ※ Notes ; Coss 1. VGS = 0 V 2. f = 1 MHz 300 2 Crss 0 0 0 4 8 12 16 0 20 5 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 2 80 10 ms 70 100 ms 60 10 s 1 ID, Drain Current [A] ID, Drain Current [A] 1s 10 DC 10 Operation in This Area is Limited by R DS(on) 0 50 40 30 20 10 Single Pulse TJ=Max rated TC=25℃ -1 10 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TA, Case Temperature [℃ ] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Zθ JA(t), Thermal Response 10 D=0.5 0 10 0.2 0.1 0.05 -1 10 0.02 0.01 -2 ※ single pulse 10 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jul. 2021. Version 1.4 4 Magnachip Semiconductor Ltd. MDU1514 – Single N-Channel Trench MOSFET 30V 10 PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min Max A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 α 0° 12° Note : Package body size, length and width do not include mold flash, protrusions and gate burrs. Jul. 2021. Version 1.4 5 Magnachip Semiconductor Ltd. MDU1514 – Single N-Channel Trench MOSFET 30V Package Dimension MDU1514 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd. Jul. 2021. Version 1.4 6 Magnachip Semiconductor Ltd.